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    K 3569 7.G EQUIVALENT Search Results

    K 3569 7.G EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    K 3569 7.G EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mrf182

    Abstract: MRF182R1 MRF182SR1 945 mosfet NI-360
    Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF182/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF182R1 MRF182SR1 N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device


    Original     		PDF MRF182/D MRF182R1 MRF182SR1 MRF182R1 mrf182 MRF182SR1 945 mosfet NI-360

    MHW1244

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHW1244/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1244 Low Distortion Wideband Amplifier Designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for mid–split and


    Original     		PDF MHW1244/D MHW1244 MHW1244/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHW1244/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1244 Low Distortion Wideband Amplifier Designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for mid–split and


    Original     		PDF MHW1244/D MHW1244 MHW1244/D

    MHW1224

    Abstract: CTB22
    Text: Freescale Semiconductor, Inc. Order this document by MHW1224/D SEMICONDUCTOR TECHNICAL DATA NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor, Inc. The RF Line MHW1224 Low Distortion Wideband Amplifier Designed specifically for broadband applications requiring low distortion


    Original     		PDF MHW1224/D MHW1224 MHW1224 CTB22

    MHW1244

    Abstract: XMD26
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MHW1244/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1244 CATV Amplifier Module Features • • • • Specified for 12–, 22– and 26–Channel Loading Excellent Distortion Performance Superior Gain, Return Loss and DC Current Stability over Temperature


    Original     		PDF MHW1244/D MHW1244 MHW1244 XMD26

    MHW1224

    Abstract: XM26
    Text: MOTOROLA Order this document by MHW1224/D SEMICONDUCTOR TECHNICAL DATA MHW1224 Low Distortion Wideband Amplifier Designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for mid–split and


    Original     		PDF MHW1224/D MHW1224 MHW1224 XM26

    MHW1244

    Abstract: DEVICE T76
    Text: MOTOROLA Order this document by MHW1244/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1244 CATV Amplifier Module Features • • • • Specified for 12–, 22– and 26–Channel Loading Excellent Distortion Performance Superior Gain, Return Loss and DC Current Stability over Temperature


    Original     		PDF MHW1244/D MHW1244 MHW1244 DEVICE T76

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc. Order this document by MHW1224/D SEMICONDUCTOR TECHNICAL DATA NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor, Inc. The RF Line MHW1224 Low Distortion Wideband Amplifier Designed specifically for broadband applications requiring low distortion


    Original     		PDF MHW1224/D MHW1224 MHW1224/D

    SMD Transistor z6

    Abstract: 465B BC847 GSM1900 LP2951 MRF18090B MRF18090BS
    Text: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up


    Original     		PDF MRF18090B/D MRF18090B MRF18090BS MRF18090B SMD Transistor z6 465B BC847 GSM1900 LP2951 MRF18090BS

    MRF1090MA

    Abstract: microwave transistor
    Text: MOTOROLA Order this document by MRF1090MA/D SEMICONDUCTOR TECHNICAL DATA Microwave Pulse Power Transistor MRF1090MA Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc


    Original     		PDF MRF1090MA/D MRF1090MA MRF1090MA microwave transistor

    MRF373A

    Abstract: MRF373ALSR1 MRF373AR1 MRF373AS 845MHz
    Text: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF373A/D MRF373AR1 MRF373ALSR1 MRF373A MRF373ALSR1 MRF373AS 845MHz

    MRF373A

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF373A/D MRF373A MRF373AS

    smd wb1

    Abstract: smd diode wb1 smd wb2 wb1 sot package sot-23 465B BC847 GSM1800 LP2951 MRF18090A MRF18090AS
    Text: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up


    Original     		PDF MRF18090A/D MRF18090A MRF18090AS MRF18090A smd wb1 smd diode wb1 smd wb2 wb1 sot package sot-23 465B BC847 GSM1800 LP2951 MRF18090AS

    MRF373A

    Abstract: MRF373AR1 MRF373AS MRF373ASR1
    Text: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF373A/D MRF373AR1 MRF373ASR1 MRF373A MRF373AS MRF373ASR1

    H6050

    Abstract: Z9 TRANSISTOR SMD BC847 SOT-23 PACKAGE 0805
    Text: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up


    Original     		PDF MRF18090B/D MRF18090B MRF18090BS H6050 Z9 TRANSISTOR SMD BC847 SOT-23 PACKAGE 0805

    smd transistor wb1

    Abstract: wb1 sot package sot-23
    Text: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up


    Original     		PDF MRF18090A/D MRF18090A MRF18090AS smd transistor wb1 wb1 sot package sot-23

    MRF373A

    Abstract: MRF373 MRF373AS VJ3640Y225KXBAT chip capacitor vishay
    Text: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF373A/D MRF373A MRF373AS MRF373 MRF373AS VJ3640Y225KXBAT chip capacitor vishay

    MRF18060

    Abstract: BC847 GSM1900 GSM1930 LP2951 MRF18060B MRF18060BS RF Power Transistor MRF18060B MRF18060
    Text: MOTOROLA Order this document by MRF18060B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060B MRF18060BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


    Original     		PDF MRF18060B/D MRF18060B MRF18060BS GSM1930 MRF18060B MRF18060 BC847 GSM1900 GSM1930 LP2951 MRF18060BS RF Power Transistor MRF18060B MRF18060

    J5-18

    Abstract: MRF18085A
    Text: MOTOROLA Order this document by MRF18085A/D SEMICONDUCTOR TECHNICAL DATA MRF18085A RF Power Field Effect Transistors MRF18085AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18085ALSR3 The RF MOSFET Line Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF18085A/D MRF18085A MRF18085AR3 MRF18085ALSR3 J5-18

    Motorola transistors M 724

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up


    Original     		PDF MRF18030B/D MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 Motorola transistors M 724

    400S

    Abstract: MRF18030A MRF18030AR3 MRF18030ASR3
    Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18030A/D MRF18030AR3 MRF18030ASR3 400S MRF18030A MRF18030ASR3

    MRF18030A

    Abstract: 2019 gain 400S MRF18030AR3 MRF18030ASR3 1003 c2 J1022
    Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18030A/D MRF18030AR3 MRF18030ASR3 MRF18030A 2019 gain 400S MRF18030ASR3 1003 c2 J1022

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies


    Original     		PDF MRF18030B/D MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 MRF18030B/D

    Untitled

    Abstract: No abstract text available
    Text: 16 15 14 13 12 11 $ 10 a A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. M DWG STATUS MISSING SYMBOLS SYMBOL DEFINITION TOTAL NO OF INSPECTIONS REQUIRED LAST NO. USED


    OCR Scan     		PDF 17JL06 26FE07 19AP07