Z14b
Abstract: Z10A Z12B Z10B z11b r1a transistor C14A RO3010 C12A C12B
Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.
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MRF374/D
MRF374
Z14b
Z10A
Z12B
Z10B
z11b
r1a transistor
C14A
RO3010
C12A
C12B
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marking c14a
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of
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MRF372
MRF372R3
MRF372R5
MRF372R3
marking c14a
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MRF373A
Abstract: MRF373ALR1 MRF373ALSR1 MRF373AS
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF373ALR1 MRF373ALSR1
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MRF373A/D
MRF373ALR1
MRF373ALSR1
MRF373ALR1
MRF373A
MRF373ALSR1
MRF373AS
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c19a
Abstract: motorola rf power chip resistor 1206 BUY13 C14A LDMOS push pull MRF373 MRF373 PUSH PULL MRF373R1 MRF373SR1
Text: MOTOROLA RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.
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MRF373R1
MRF373SR1
MRF373R1
MRF373/D
c19a
motorola rf power
chip resistor 1206
BUY13
C14A
LDMOS push pull
MRF373
MRF373 PUSH PULL
MRF373SR1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372/D
MRF372
MRF372/D
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RO30
Abstract: mrf374
Text: Freescale Semiconductor Technical Data MRF374A Rev. 4, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374A
RO30
mrf374
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MRF373A
Abstract: MRF373ALR1 MRF373ALSR1 MRF373AS
Text: Freescale Semiconductor Technical Data Document Number: MRF373A Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF373ALR1 MRF373ALSR1 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
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MRF373A
MRF373ALR1
MRF373ALSR1
MRF373ALR1
MRF373A
MRF373ALSR1
MRF373AS
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GX-0300-55
Abstract: LTD M250 B07T MRF373R1 MRF373SR1 NI-360S NI-360
Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these
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MRF373/D
MRF373R1
MRF373SR1
MRF373R1
GX-0300-55
LTD M250
B07T
MRF373SR1
NI-360S
NI-360
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MRF372
Abstract: C14A MRF372R5 transmitter 446 mhz TRANSISTOR 1003
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field−Effect Transistor MRF372 MRF372R5 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372/D
MRF372
MRF372R5
MRF372
C14A
MRF372R5
transmitter 446 mhz
TRANSISTOR 1003
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C14A
Abstract: MRF372 R5B transistor C10A 473 coilcraft d j937
Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device
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MRF372
C14A
MRF372
R5B transistor
C10A
473 coilcraft d
j937
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C14A
Abstract: MRF374A C12A C12B C13B MRF374 RO3010 j310 vishay J352 100WPEP
Text: Freescale Semiconductor Technical Data Document Number: MRF374A Rev. 5, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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C14A
MRF374A
C12A
C12B
C13B
MRF374
RO3010
j310 vishay
J352
100WPEP
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MRF373A
Abstract: MRF373 MRF373AS VJ3640Y225KXBAT chip capacitor vishay
Text: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
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MRF373A
MRF373AS
MRF373
MRF373AS
VJ3640Y225KXBAT
chip capacitor vishay
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MRF373A
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
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MRF373ALR1
MRF373ALSR1
MRF373A/D
MRF373A
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transistor R1A 37
Abstract: 5233 mosfet J146 VJ1210y
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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transistor R1A 37
5233 mosfet
J146
VJ1210y
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marking c14a
Abstract: ATC - Semiconductor Devices transistor j239 04 6274 045 000 800
Text: MRF374A Rev. 4, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374A
MRF374A
marking c14a
ATC - Semiconductor Devices
transistor j239
04 6274 045 000 800
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2a258 transistor
Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii
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DL110/D
2a258 transistor
Fuji Electric tv schematic diagram
smd transistor WB3
VHF FM PLL schematic mc145152
Motorola transistor smd marking codes
MARK 176 SOT363 RF
Note AR164, Motorola RF Device Data, Volume II, D
tip off 0401 mosfet transistor
cordless phone Transceiver IC
semiconductors cross index
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z14b
Abstract: RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A
Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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MRF374
z14b
RO3010
C14A
C12A
C12B
C13B
MRF374
r1a transistor
VJ2225Y
Z14A
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mrf373al
Abstract: Vj3640Y MRF373A
Text: MRF373A Rev. 5, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF373ALR1 MRF373ALSR1 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
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MRF373ALR1
MRF373ALSR1
mrf373al
Vj3640Y
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RO3010
Abstract: C14A z14b
Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device
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MRF374
MRF374/D
RO3010
C14A
z14b
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J352
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374A
MRF374A/D
J352
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MOSFET J132
Abstract: mosfet J137 motorola 305 470 860 mhz PCB GX-0300-55 S1239 M2503
Text: MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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MRF373
MRF373S
MRF373S
MRF373/D
MOSFET J132
mosfet J137
motorola 305
470 860 mhz PCB
GX-0300-55
S1239
M2503
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balun 75 ohm
Abstract: C14A RO3010 MRF372 c9ab
Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372
balun 75 ohm
C14A
RO3010
MRF372
c9ab
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C3B Kemet
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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C3B Kemet
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MRF373R1
Abstract: C19B C14A rf push pull mosfet power amplifier B07T MRF373SR1 chip resistor 1206 ATC 700 B 101 G P
Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these
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MRF373/D
MRF373R1
MRF373SR1
MRF373R1
C19B
C14A
rf push pull mosfet power amplifier
B07T
MRF373SR1
chip resistor 1206
ATC 700 B 101 G P
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