CHM1193
Abstract: k-band gaas schottky diode
Text: CHM1193 K-Band Mixer GaAs Monolithic Microwave IC Description The CHM1193 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or transmitter part. This circuit is manufactured with the Schottky diode process : 1 µm Schottky
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CHM1193
CHM1193
CHM1192.
DSCHM11930077
17-Mar-00
k-band gaas schottky diode
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CHM1190
Abstract: CHM1191
Text: CHM1191 K Band Mixer GaAs Monolithic Microwave IC Description The CHM1191 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or transmitter part. This circuit is manufactured with the BESMMIC process: 1 µm Schottky diode
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CHM1191
CHM1191
CHM1190.
DSCHM11919025
CHM1190
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lO37
Abstract: CHM1193
Text: CHM1192 K- Band Mixer GaAs Monolithic Microwave IC Description LO IF RF -2 Conversion gain dB The CHM1192 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or transmitter part. This circuit is manufactured with the
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CHM1192
CHM1192
CHM1193.
DSCHM11929042
lO37
CHM1193
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Untitled
Abstract: No abstract text available
Text: GaAs Schottky Diodes TM MS8001 – MS8004 Packaged and Bondable Chips Features Low-Noise Performance High Cut-off Frequency Passivated to Enhance Reliability Packaged Diodes and Bondable Chips Applications Single and Balanced Mixers and Detectors Transceivers X, K and Ka Bands
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MS8001
MS8004
MS8000
Maximum015
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k and ka band radar detector
Abstract: MS8000 MS8004 MS8001-P10 noise diode Microwave schottky Diode mixer RF Microwave schottky Diode mixer MS8001 m38 schottky MS8002
Text: GaAs Schottky Diodes TM MS8001 – MS8004 Packaged and Bondable Chips Features ● Low-Noise Performance ● High Cut-off Frequency ● Passivated to Enhance Reliability ● Packaged Diodes and Bondable Chips Applications ● Single and Balanced Mixers and Detectors
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MS8001
MS8004
MS8000
k and ka band radar detector
MS8004
MS8001-P10
noise diode
Microwave schottky Diode mixer
RF Microwave schottky Diode mixer
MS8001
m38 schottky
MS8002
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MS8001
Abstract: m38 schottky
Text: GaAs Schottky Diodes TM MS8001 – MS8004 Packaged and Bondable Chips Features ● Low-Noise Performance ● High Cut-off Frequency ● Passivated to Enhance Reliability ● Packaged Diodes and Bondable Chips Applications ● Single and Balanced Mixers and Detectors
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MS8001
MS8004
MS8000
In015
MS8001
m38 schottky
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MA40416-1010
Abstract: MA40404-119 MA40400 Ka Band Mixer mixer diodes MA40415 MA40419-1108 MA40403 MA40404 MA40408
Text: GaAs Schottky Mixer Diodes MA40400 Series V3.00 Features ● ● ● ● ● ● ● Case Styles Very Low Noise Figure from X through W-Band Low Junction Capacitance Low Series Resistance Wide Range of Available Product – Packaged Diodes – Chips – Beam Leads
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MA40400
MA40416-1010
MA40404-119
Ka Band Mixer
mixer diodes
MA40415
MA40419-1108
MA40403
MA40404
MA40408
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Diodes
Abstract: RF Diode Design Guide
Text: RF Diode Design Guide Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high reliability analog and mixed signal semiconductors. Leveraging core technologies, Skyworks offers diverse standard and custom linear products supporting automotive, broadband, cellular infrastructure, energy management,
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eng508
BRO389-11B
Diodes
RF Diode Design Guide
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Plasma Etch Induced Surface Damage and Its Impacts on GaAs Schottky Diodes
Abstract: No abstract text available
Text: PLASMA ETCH INDUCED SURFACE DAMAGE AND ITS IMPACTS ON GaAs SCHOTTKY DIODES Hong Shen*, Peter Dai, and Ravi Ramanathan Skyworks Solutions, Inc., 2427 Hillcrest Drive, Newbury Park, CA 91320 Email: hong.shen@skyworksinc.com Telephone: 805 480-4481 Keywords: GaAs, Schottky diode, dry etch, barrier height, plasma, damage
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device1000
Plasma Etch Induced Surface Damage and Its Impacts on GaAs Schottky Diodes
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mixer diodes
Abstract: DMK2605-000 DMK2862 DMK2307-000 DMK2605 CMK7702 CMK7705 DMK2860
Text: GaAs Schottky Barrier Mixer Diodes CMK and DMK Series Features Low Series Resistance Low Junction Capacitance Ideal for Image Enhancement Mixers Passivated Planar Construction Description Alpha’s series of gallium arsenide Schottky barrier diodes are available in beam–lead, chip and
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015mm)
005mm)
mixer diodes
DMK2605-000
DMK2862
DMK2307-000
DMK2605
CMK7702
CMK7705
DMK2860
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EL36
Abstract: ND5052-3G
Text: X TO K*BAND GaAs SCHOTTKY BARRIER MIXER DIODE FEATURES OUTLINE DIMENSIONS Untutnmm • X BAND MIXgR DIODE OUTLINE 3 6 • LOW NOISE GaAs SCHOTTKY DIODE NF = 5 dB TYP at I » 10 GHz • LOW TERMINAL CAPACITANCE C i =* 0.3 pF MAX at 1 M Hi • SMALL SIZE • LOW COST
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ND5052-3G
ND5052-3G
EL36
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Untitled
Abstract: No abstract text available
Text: united monolithic semiconductors * °JV\‘V •* ^ c. $ , C \ * % V * CHM1192 ^ K- Band Mixer GaAs Monolithic Microwave IC Description The CHM1192 is a balanced Schottky diode mixer based on a six-quarter wave ring structure. It could be use in receiver or
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CHM1192
CHM1192
CHM1193.
DSCHM11929042_
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SPD-221
Abstract: No abstract text available
Text: SAfiYO G a A s Di o d e s 1 ale GaAs Schottky P a c k a g e d 'I'ype B a r r 1 e r Di o d e s The Sanyo SPD Se ri e s a re packaged type GaAs Schottky b a r r i e r diodes designed fo r co nverters, modul at o rs , d e t e c t o r s th at can be operated in the X band (8.2 to 12.4GHz) and KU band (12.4 to 18. 0GHz).
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SGD102,
SGD102T)
SBL801A,
SBL802A,
SBL803A,
SBL804A,
10sec
11i-wave,
SVD101
SVD102
SPD-221
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DSCHM11939042
Abstract: No abstract text available
Text: united monolithic semiconductors .¿few « « «« » o e « 9 »® < S > ® /nmmh hno C H M l 193 w K-Band Mixer _ GaAs Monolithic Microwave IC Description The CHM1193 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or
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CHM1193
CHM1192.
DSCHM11939042
DSCHM11939042
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Untitled
Abstract: No abstract text available
Text: u n ite d * „ m o n o lith ic sem ico n d u cto rs « »A " : / nU m h h n n CHMl 190 «9V K Band Mixer . GaAs Monolithic Microwave IC t Description The CHM1190 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or
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CHM1190
CHM1191.
DSCHM11909025
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6AI diode
Abstract: No abstract text available
Text: GE C P L E S S E Y SI M I C O N I u c r O K s DC1325 GaAs SCHOTTKY J-BAND WAVEGUIDE MIXER DIODE This general purpose diode is available in the microstrip package and is suitable tor applications requiring high performance mixers. This diode can be supplied in matched pairs by the addition
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DC1325
250mW
150mW
600mV
150pA
6AI diode
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SPD221P
Abstract: No abstract text available
Text: SM YO Packaged Type GaAs Schottky Barrier Diodes The Sanyo SPD S e r i e s a r e pa cka ge d ty pe GaAs S c h o t t k y b a r r i e r d i o d e s d e s i g n e d f o r c o n v e r t e r s , o p e r a t e d i n th e X band 8 . 2 m o d u l a t o r s , d e t e c t o r s t h a t can be
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/Ta-25fc
SGD100T)
SGD102T)
MT930622TR
SPD221P
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MA40420
Abstract: schottky diodes Anti parallel
Text: MA40401/MA40422 Series GaAs Schottky Mixer Diodes Features • VERY LOW NOISE FIGURE X, W-BAND ■ LOW JUNCTION CAPACITANCE ■ LOW SERIES RESISTANCE ■ WIDE RANGE OF AVAILABLE PRODUCT Description This family of Gallium Arsenide Schottky diodes is fabri
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MA40401/MA40422
MA40420
schottky diodes Anti parallel
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DMK2784
Abstract: No abstract text available
Text: ESAlpha GaAs Schottky Barrier Mixer Diodes DMK Series Features • Low Series Resistance ■ Low Junction Capacitance ■ Ideal for Image Enhancement Mixers ■ Passivated Planar Construction Description Alpha’s series of GaAs Schottky barrier diodes are
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2/99A
DMK2784
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DMK2784
Abstract: No abstract text available
Text: EBAlpha GaAs Schottky Barrier Mixer Diodes DMK Series Features • Low Series Resistance ■ Low Junction Capacitance ■ Ideal for Image Enhancement Mixers 7 ■ Passivated Planar Construction X Description A lpha’s series of GaAs Schottky barrier diodes are
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2/99A
DMK2784
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diode ring mixer
Abstract: MA40415
Text: AtiKCM m an A M P com pany GaAs Schottky Mixer Diodes MA40400 Series V 2.00 Features Case Styles • Very Low N oise Figure from X th rou gh W -Band • Low Junction C apacitan ce • Low Series R esistan ce • W ide R an ge o f Available Product 276 - P a ck a g ed D io d e s
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MA40400
diode ring mixer
MA40415
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MA40420
Abstract: mixer 8-12 GHZ schottky diodes Anti parallel MA40410
Text: MA40401/MA40422 Series GaAs Schottky Mixer Diodes Features • VERY LOW NOISE FIGURE X, W-BAND ■ LOW JUNCTION CAPACITANCE ■ LOW SERIES RESISTANCE ■ WIDE RANGE OF AVAILABLE PRODUCT PACKAGED DIODES CHIPS BEAM LEADS ANTI-PARALLEL BEAM LEADS BRIDGE QUADS
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MA40401/MA40422
MA40401-40412
MA40413
MA-40400
MA40400
MA40420
mixer 8-12 GHZ
schottky diodes Anti parallel
MA40410
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SV153A
Abstract: Sv153 varicap diode 2SC491 1SV226 Am tuning varicap 1SS242 1SV211 4007F S1B66
Text: 3. BLOCK DIAGRAM OF RECOMMENDED PRODUCTS 3.1 RF DISCRETE DEVICES FOR AM TUNER Bi'Transistor PIN Diode Single TO-92 SM 1 SV 9 9 Double use SM Q SM TO-92 USM 1SV128 1SV271 1SV172 1S V 2 3 7 1SV252 MINI SM 2 SC 3 8 0 T M 2 SC 26 6 9 2SC2715 2 SC 94 1 T M 2SC2670
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2SC2670
2SC2715
2SC2716
1SV128
1SV271
1SV172
1SV252
1SV102
SV149
2V02H
SV153A
Sv153
varicap diode
2SC491
1SV226
Am tuning varicap
1SS242
1SV211
4007F
S1B66
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Silicon Point Contact Mixer Diodes
Abstract: No abstract text available
Text: GaAs Schottky Barrier Mixer Diodes Features • Low Noise Figure Excellent Cutoff Ideal for Image Enhancement Mixers Passivated Planar Construction for Reliability |U L Description Alpha’s series of gallium arsenide Schottky barrier di odes are available in beam-lead, chip and packaged
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DMK6571-000
DMK3318-000
DMK6583-000
DMK3379-000
DMK3167-000
DMK3353-000
DMK3354-000
DMK3386-000
DMK4712-000
DMK3308-000
Silicon Point Contact Mixer Diodes
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