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    K10A50D Search Results

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    K10A50D Price and Stock

    Toshiba America Electronic Components TK10A50D(STA4,Q,M)

    MOSFET N-CH 500V 10A TO220SIS
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    DigiKey TK10A50D(STA4,Q,M) Tube 1
    • 1 $1.72
    • 10 $1.72
    • 100 $1.72
    • 1000 $0.765
    • 10000 $0.765
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    Mouser Electronics TK10A50D(STA4,Q,M)
    • 1 $2.08
    • 10 $1.93
    • 100 $1.04
    • 1000 $0.899
    • 10000 $0.887
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    EBV Elektronik TK10A50D(STA4,Q,M) 19 Weeks 50
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    Toshiba America Electronic Components TK10A50D(STA4QM)

    Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK10A50D(STA4,Q,M))
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    Avnet Americas TK10A50D(STA4QM) Tube 32 Weeks 50
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    • 100 $0.91188
    • 1000 $0.8262
    • 10000 $0.8262
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    Toshiba America Electronic Components TK10A50DSTA4

    SILICON N CHANNEL MOS TYPE (PI-MOSVII) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 10A I(D), 500V, 0.72ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA TK10A50DSTA4 50
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    Toshiba America Electronic Components TK10A50D(STA4,X,S)

    MOSFET
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    Chip1Stop TK10A50D(STA4,X,S) Tube 10
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    • 10 $0.331
    • 100 $0.331
    • 1000 $0.331
    • 10000 $0.331
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    Toshiba America Electronic Components TK10A50D

    MOSFET N-CH 500V 10A TO-220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics TK10A50D 41,400
    • 1 -
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    • 100 $0.728
    • 1000 $0.486
    • 10000 $0.486
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    K10A50D Datasheets Context Search

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    K10A50D

    Abstract: K10A50 TK10A50D VDD400 K*A50D toshiba K10A50D
    Text: K10A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K10A50D ○ スイッチングレギュレータ用 単位: mm z : RDS (ON) = 0.62 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 5.0 S (標準)


    Original     		PDF TK10A50D SC-67 2-10U1B 20070701-JA K10A50D K10A50 TK10A50D VDD400 K*A50D toshiba K10A50D

    K10A50D

    Abstract: K10A50 TK10A50D K*A50D
    Text: K10A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K10A50D ○ スイッチングレギュレータ用 単位: mm z : RDS (ON) = 0.62 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 5.0 S (標準)


    Original     		PDF TK10A50D SC-67 2-10U1B K10A50D K10A50 TK10A50D K*A50D

    toshiba K10A50D

    Abstract: k10a50d toshiba marking code transistor k10a50d transistor K10a50d k10a50d data TK10A50D K10A50 K10a50d Transistor K*A50D k10a
    Text: K10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		PDF TK10A50D toshiba K10A50D k10a50d toshiba marking code transistor k10a50d transistor K10a50d k10a50d data TK10A50D K10A50 K10a50d Transistor K*A50D k10a

    k10a50d

    Abstract: No abstract text available
    Text: K10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		PDF TK10A50D k10a50d

    K10A50

    Abstract: K10A50D toshiba marking code transistor k10a50d
    Text: K10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		PDF TK10A50D K10A50 K10A50D toshiba marking code transistor k10a50d

    K10A50

    Abstract: K10A50D toshiba K10A50D toshiba marking code transistor k10a50d K*A50D TK10A50D k10a50d data transistor K10a50d k10a *K10A50D
    Text: K10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		PDF TK10A50D K10A50 K10A50D toshiba K10A50D toshiba marking code transistor k10a50d K*A50D TK10A50D k10a50d data transistor K10a50d k10a *K10A50D