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    K10A50D TRANSISTOR Search Results

    K10A50D TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    toshiba K10A50D

    Abstract: k10a50d toshiba marking code transistor k10a50d transistor K10a50d k10a50d data TK10A50D K10A50 K10a50d Transistor K*A50D k10a
    Text: TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		PDF TK10A50D toshiba K10A50D k10a50d toshiba marking code transistor k10a50d transistor K10a50d k10a50d data TK10A50D K10A50 K10a50d Transistor K*A50D k10a

    k10a50d

    Abstract: No abstract text available
    Text: TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		PDF TK10A50D k10a50d

    K10A50

    Abstract: K10A50D toshiba marking code transistor k10a50d
    Text: TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		PDF TK10A50D K10A50 K10A50D toshiba marking code transistor k10a50d

    K10A50

    Abstract: K10A50D toshiba K10A50D toshiba marking code transistor k10a50d K*A50D TK10A50D k10a50d data transistor K10a50d k10a *K10A50D
    Text: TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		PDF TK10A50D K10A50 K10A50D toshiba K10A50D toshiba marking code transistor k10a50d K*A50D TK10A50D k10a50d data transistor K10a50d k10a *K10A50D