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    Toshiba America Electronic Components TK14A55D(STA4,Q,M)

    MOSFETs N-Ch MOS 14A 550V 50W 2300pF 0.37
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TK14A55D(STA4,Q,M)
    • 1 $3.65
    • 10 $3.52
    • 100 $1.73
    • 1000 $1.41
    • 10000 $1.41
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    K14A55 Datasheets Context Search

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    k14a55

    Abstract: K14A55D TK14A55D transistor K14A55D
    Text: K14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)


    Original     		TK14A55D k14a55 K14A55D TK14A55D transistor K14A55D PDF

    K14A55D

    Abstract: TK14A55D
    Text: K14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)


    Original     		TK14A55D K14A55D TK14A55D PDF

    K14A55D

    Abstract: TK14A55D transistor K14A55D
    Text: K14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)


    Original     		TK14A55D K14A55D TK14A55D transistor K14A55D PDF

    transistor K14A55D

    Abstract: No abstract text available
    Text: K14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)


    Original     		TK14A55D transistor K14A55D PDF

    K14A55D

    Abstract: TK14A55D transistor K14A55D
    Text: K14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)


    Original     		TK14A55D K14A55D TK14A55D transistor K14A55D PDF

    K14A55D

    Abstract: TK14A55D
    Text: K14A55D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K14A55D ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.31Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.5S (標準)


    Original     		TK14A55D SC-67 2-10U1B 20070701-JA K14A55D TK14A55D PDF