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    K15A60D Search Results

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    K15A60D Price and Stock

    Toshiba America Electronic Components TK15A60D(STA4,Q,M)

    MOSFET N-CH 600V 15A TO220SIS
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    DigiKey TK15A60D(STA4,Q,M) Tube
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    Mouser Electronics TK15A60D(STA4,Q,M) 60
    • 1 $2.23
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    Chip1Stop TK15A60D(STA4,Q,M) Bulk 21
    • 1 $0.69
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    Toshiba America Electronic Components TK15A60D(Q)

    Trans MOSFET N-CH Si 600V 15A 3-Pin(3+Tab) TO-220SIS
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    Chip1Stop TK15A60D(Q) 45
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    Toshiba America Electronic Components TK15A60D

    MOSFET N-CH 600V 15A TO-220SIS
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    Win Source Electronics TK15A60D 122,400
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    Toshiba America Electronic Components TK15A60D(STA4

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    Win Source Electronics TK15A60D(STA4 7,000
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    K15A60D Datasheets Context Search

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    TK15A60D

    Abstract: K15A60D TK15A60D N K15A60 TK15A60 k15a
    Text: K15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K15A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω(typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		PDF TK15A60D TK15A60D K15A60D TK15A60D N K15A60 TK15A60 k15a

    K15A60D

    Abstract: TK15A60D K15A60 k15a
    Text: K15A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K15A60D スイッチングレギュレータ用 単位: mm 10 ± 0.3 Ф3.2 ± 0.2 : IDSS = 10 A (最大) (VDS = 600 V) 15.0 ± 0.3 : |Yfs| = 8.5 S (標準) 順方向伝達アドミタンスが高い。


    Original     		PDF TK15A60D K15A60D TK15A60D K15A60 k15a

    K15A60

    Abstract: No abstract text available
    Text: K15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K15A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		PDF TK15A60D K15A60

    K15A60D

    Abstract: K15A60 TK15A60D S1612
    Text: K15A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K15A60D スイッチングレギュレータ用 単位: mm 10 ± 0.3 Ф3.2 ± 0.2 : IDSS = 10 A (最大) (VDS = 600 V) 15.0 ± 0.3 : |Yfs| = 8.5 S (標準) 順方向伝達アドミタンスが高い。


    Original     		PDF TK15A60D K15A60D K15A60 TK15A60D S1612

    K15A60D

    Abstract: No abstract text available
    Text: K15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K15A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		PDF TK15A60D K15A60D

    k15a60d

    Abstract: K15A60 TK15A60D N k15a
    Text: K15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K15A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		PDF TK15A60D k15a60d K15A60 TK15A60D N k15a