k17 DIODE
Abstract: TSI265B1 TSI180B1 TSI200B1 TSI220B1 TSI62B1 crowbar circuit TSIxxB1
Text: TSIxxB1 Application Specific Discretes A.S.D. TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE MAIN APPLICATION Telecom equipment requiring combined protection against transient overvoltages and rectification by diode bridge : Telephone set Base station for cordless set
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TSI180B1
Abstract: TSI200B1 TSI220B1 TSI265B1 TSI62B1 20 kV generator schematic TSI200 k17 DIODE TSIxxB1
Text: TSIxxB1 Application Specific Discretes A.S.D. TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE MAIN APPLICATION Telecom equipment requiring combined protection against transient overvoltages and rectification by diode bridge : Telephone set Base station for cordless set
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TSI180B1
Abstract: TSI200B1 TSI220B1 TSI265B1 TSI62B1 ST Microelectronics SO8 Marking information ST Microelectronics SO8 Marking TSIxxB1
Text: TSIxxB1 Application Specific Discretes A.S.D. TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE MAIN APPLICATION • ■ ■ ■ ■ ■ Telecom equipment requiring combined protection against transient overvoltages and rectification by diode bridge :
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schematic diagram induction
Abstract: short circuit protection schematic diagram ptc resistor diagram induction DIODE marking ED TSI180B1 TSI200B1 TSI220B1 TSI265B1 TSI62B1
Text: TSIxxB1 Application Specific Discretes A.S.D. TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE MAIN APPLICATION • ■ ■ ■ ■ ■ Telecom equipment requiring combined protection against transient overvoltages and rectification by diode bridge :
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TSI265B1
Abstract: TSI180B1 TSI200B1 TSI220B1 TSI62B1 k17 DIODE TSIxxB1
Text: TSIxxB1 Application Specific Discretes A.S.D. TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE MAIN APPLICATION • ■ ■ ■ ■ ■ Telecom equipment requiring combined protection against transient overvoltages and rectification by diode bridge :
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BRS212-280
Abstract: BRS212-220 BR211 BRS212 BRS212-140 BRS212-160 BRS212-180 BRS212-200 BRS212-240 BRS212-260
Text: Philips Semiconductors Product specification Breakover diodes BRS212 series GENERAL DESCRIPTION QUICK REFERENCE DATA A range of bidirectional, breakover diodes in a two terminal, surface mounting, plastic envelope. These devices feature controlled breakover
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BRS212
BRS212-140
BRS212-160
BRS212-180
BRS212-200
BRS212-220
BRS212-240
BRS212-260
BRS212-280
16ion
BRS212-280
BRS212-220
BR211
BRS212-140
BRS212-160
BRS212-180
BRS212-200
BRS212-240
BRS212-260
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DIODE ITT 310
Abstract: No abstract text available
Text: TSI Terminal set interface protection and diode bridge Features • Stand-off voltage from 62 V to 265 V ■ Peak pulse current: 30 A 10/1000 µs ■ Maximum DC current: IF = 0.2 A ■ Holding current: 150 mA SO-8 Benefits ■ Trisil technology is not subject to ageing and
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24V 4.20MA
Abstract: MTL Surge Technologies 24V to 4-20MA ul 497B requirements for gas discharge tubes MTL Instruments Group
Text: ZoneBarrier Protects sensitive I/O ports against induced surges and transients ● For 24V, 4-20mA current loop applications ● Industrial Ethernet compatible versions, UL Certified Cat.5 ● Three stage protection including Gas Discharge Tube and Silicon Avalanche Diode
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4-20mA
24V 4.20MA
MTL Surge Technologies
24V to 4-20MA
ul 497B requirements for gas discharge tubes
MTL Instruments Group
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Untitled
Abstract: No abstract text available
Text: 一華半導體股份有限公司 IR CONTROL MOSDESIGN SEMICONDUCTOR CORP. M21 22 IR TV/VCD TRANSMITTER IR CONTROL IC GENERAL DESCRIPTION 功能敘述 The M21(22) is a remote control transmitter ASIC for TV, VTR, etc. There are 65,536 customer codes setting by external diodes,
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PD6121/22
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Untitled
Abstract: No abstract text available
Text: 一華半導體股份有限公司 IR CONTROL MOSDESIGN SEMICONDUCTOR CORP. M21 22 IR TV/VCD TRANSMITTER IR CONTROL IC GENERAL DESCRIPTION 功能叙述 The M21(22) is a remote control transmitter ASIC for TV, VTR, etc. There are 65,536 customer codes setting by external diodes,
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PD6121/22
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BR211
Abstract: BR211SM BR211SM-140 BR211SM-160 BR211SM-180 BR211SM-200 BR211SM-220 BR211SM-240 BR211SM-260 BR211SM-280
Text: Philips Semiconductors Preliminary specification Breakover diodes GENERAL DESCRIPTION BR211SM series QUICK REFERENCE DATA A range of bidirectional, breakover diodes in a two terminal, surface mounting, plastic envelope. These devices feature controlled breakover
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BR211SM
BR211SM-140
BR211SM-280
OD106
BR211
BR211SM-160
BR211SM-180
BR211SM-200
BR211SM-220
BR211SM-240
BR211SM-260
BR211SM-280
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BR211-220
Abstract: BR211 equivalent RT-HE BR211 BR211-140 BR211-160 BR211-180 BR211-200 BR211-240 BR211-260
Text: Philips Semiconductors Product specification Breakover diodes GENERAL DESCRIPTION BR211 series QUICK REFERENCE DATA A range of bidirectional, breakover diodes in an axial, hermetically sealed, glass envelope. These devices feature controlled breakover voltage and high holding current
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BR211
BR211-140
BR211-XXX
BR211-220
BR211 equivalent
RT-HE
BR211-160
BR211-180
BR211-200
BR211-240
BR211-260
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BR211 equivalent
Abstract: BR211-220 philips br211 220 RTHE BR211 BR211-100 BR211-120 BR211-140 BR211-160 BR211-180
Text: Philips Semiconductors Product specification Breakover diodes BR211 series GENERAL DESCRIPTION QUICK REFERENCE DATA A range of bidirectional, breakover diodes in an axial, hermetically sealed, glass envelope. These devices feature controlled breakover voltage and high holding current
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BR211
BR211-100
BR211-XXX
BR211 equivalent
BR211-220
philips br211 220
RTHE
BR211-120
BR211-140
BR211-160
BR211-180
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209CmQ150
Abstract: K1760 408CMQ060 121NQ035 10BQ040 10BQ060 10BQ100 10TQ035S 10TQ045S 30BQ015
Text: Index International Rectifier Schottky Diodes I RM @ VRWM VFM@ I FM Part Num VRRM V I FAV@ T C (C) (A) 25°C (V) EAS (mJ) I AR 25°C (A) (mA) Max. T J (°C) Fax-on-Demand Notes Surface Mount SMB 10BQ100 10BQ015 10BQ040 10BQ060 100 15 40 60 1 1 1 1 152 78
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10BQ100
10BQ015
10BQ040
10BQ060
30BQ100
30BQ015
30BQ040
30BQ060
209CmQ150
K1760
408CMQ060
121NQ035
10BQ040
10BQ060
10BQ100
10TQ035S
10TQ045S
30BQ015
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors Preliminary specification Breakover diodes BR211SM series GENERAL DESCRIPTION A range of bidirectional, breakover diodes in a two terminal, surface mounting, plastic envelope. These devices feature controlled breakover voltage and high holding current
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BR211SM
BR211SM-140
BR211SM-280
OUTLINE-SOD106
13emperature.
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TP10N
Abstract: No abstract text available
Text: £ 7 7 SGS-THOMSON k7#s. BD glSÌ(S ilLI(@T^ liD(ei Application Specific Discretes a q 25 n TSIxxBI TER M IN AL SET INTERFACE PROTECTION AND DIODE BRIDGE MAIN APPLICATION Telecom equipment requiring combined protection against transient overvoltages and
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Untitled
Abstract: No abstract text available
Text: 25E J> • bb 53 1 3 1 0 0 2 2 2 ^ 5 3 ■ DEVELOPMENT DATA BR213 SERIES This data sheet contains advance information and specifications are subject to change w ithout notice. J K N AMER PH ILI PS /D IS CR ET E T ^2S ^< D S - DUAL BREAKOVER DIODES A range of monolithic dual bidirectional breakover diodes w ith ±12% tolerance of breakover voltage.
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BR213
BR213
T-25-05
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Untitled
Abstract: No abstract text available
Text: rrr •‘1! , s g s -Th o m s o n MM&œsTHDHOiH; Application Specific Discrètes T S Ix x B I TER M IN AL SET INTERFACE A Q D T M PROTECTION AND DIODE BRIDGE MAIN APPLICATION T elecom equipm en t requiring com bined protection against transient overvoltage s and
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BR211 equivalent
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Breakover diodes BR211 series GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL A range of bidirectional, breakover diodes in an axial, hermetically sealed, glass envelope. These devices feature controlled breakover
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BR211
BR211-140
LIMITIN00
BR211 equivalent
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BR211 equivalent
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Breakover diodes GENERAL DESCRIPTION BR211 series QUICK REFERENCE DATA A range of bidirectional, breakover diodes in an axial, hermetically sealed, glass envelope. These devices feature controlled breakover voltage and high holding current
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BR211
BR211-100to
BR211 equivalent
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SM2F
Abstract: M2480 BR216
Text: BR216 _ DUAL ASYMMETRICAL BREAKOVER DIODE The BR216 is a monolithic dual asymmetrical 65 V breakover diode in the T0-220AB outline. Each half o f the device conducts normally in one direction, but in the other direction it acts as a breakover diode.
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BR216
BR216
T0-220AB
M3231
SM2F
M2480
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100MS
Abstract: BR210-100 pjiy M3076
Text: 25E D • ^53=133. 0G22243 4 ■ BR210 SERIES N AUER PHILIPS/DISCRETE T - 2 S - 0 ^ BREAKOVER DIODES A range of glass-passivated bidirectional breakover diodes in the TO-220AC outline, available in a + / 12% tolerance series of nominal breakover voltage. Their controlled breakover voltage and peak
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0G22E43
BR210
O-220AC
BR210â
O-22QAC
100MS
BR210-100
pjiy
M3076
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LT 228
Abstract: No abstract text available
Text: DEVELOPMENT DATA BR211 SERIES This data sheet contains advance information and specifications are subject to change without notice. BREAKOVER DIODES A range o f bidirectional diodes in hermetically sealed axial-leaded implosion-diode glass outlines w ith a
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BR211
OD-84.
100ELOPMENT
LT 228
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Untitled
Abstract: No abstract text available
Text: 35E D I I bb53T31 ODaEabT □ • BR216 N AMER PHILIPS/DISCRETE tte - o s r DUAL ASYMMETRICAL BREAKOVER DIODE The BR216 is a monolithic dual asymmetrical 65 V breakover diode in the TO-220AB outline. Each half of the device conducts normally in one direction, but in the other direction it acts as a
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bb53T31
BR216
BR216
O-220AB
bh5BT31
T-25-05
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