K1B2816
Abstract: No abstract text available
Text: K1B2816B6M UtRAM Document Title 8Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design target 0.1 Revised November 28, 2003 Advance - Added Full Page 256 word, Wrap Around Burst in burst length
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K1B2816B6M
8Mx16
K1B2816
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microprocessor types
Abstract: K1B2816B7M-I UtRAM Density K1B2816
Text: Advance UtRAM K1B2816B7M Document Title 8Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design target 0.1 Revised November 28, 2003 Advance - Added Full Page 256 word, Wrap Around Burst in burst length
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K1B2816B7M
8Mx16
microprocessor types
K1B2816B7M-I
UtRAM Density
K1B2816
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary UtRAM K1B2816BAA 128Mb 8M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1B2816BAA
128Mb
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PDF
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K1B2816
Abstract: No abstract text available
Text: K1B2816BAA UtRAM 128Mb 8M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1B2816BAA
128Mb
K1B2816
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PDF
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Untitled
Abstract: No abstract text available
Text: K1B2816BBA UtRAM 128Mb 8M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1B2816BBA
128Mb
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PDF
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K1B5616BBM
Abstract: K1B2816B2A K1B5616B2M K1B5616BAM
Text: Mode, Status & current during Power Up This Application Note is applied to below products. - K1B5616B2M, K1B5616BAM, K1B5616BBM - K1B2816B2A, K1B2816BAA, K1B2816BBA Aug. 2006 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD
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K1B5616B2M,
K1B5616BAM,
K1B5616BBM
K1B2816B2A,
K1B2816BAA,
K1B2816BBA
200us
K1B5616BBM
K1B2816B2A
K1B5616B2M
K1B5616BAM
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PDF
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UtRAM
Abstract: K1B5616BBM K1B5616B2M K1B2816B2A K1B3216BDD K1B5616BAM K1B6416B6C 0000H
Text: Write method & Mode Change This Application Note is applied to below products. - K1B5616B2M, K1B5616BAM, K1B5616BBM - K1B2816B2A, K1B2816BAA, K1B2816BBA - K1B6416B6C, K1B3216BDD June. 2006 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD
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K1B5616B2M,
K1B5616BAM,
K1B5616BBM
K1B2816B2A,
K1B2816BAA,
K1B2816BBA
K1B6416B6C,
K1B3216BDD
5555h)
5555h
UtRAM
K1B5616BBM
K1B5616B2M
K1B2816B2A
K1B3216BDD
K1B5616BAM
K1B6416B6C
0000H
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PDF
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samsung capacitance Lot Code Identification
Abstract: K1B2816
Text: K1B2816B2A UtRAM 128Mb 8M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1B2816B2A
128Mb
samsung capacitance Lot Code Identification
K1B2816
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PDF
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Untitled
Abstract: No abstract text available
Text: K1B2816BFA UtRAM 128Mb 8M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1B2816BFA
128Mb
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PDF
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Untitled
Abstract: No abstract text available
Text: K1B2816BBA UtRAM 128Mb 8M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1B2816BBA
128Mb
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PDF
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K1B2816B2A
Abstract: bba 1st K1B5616B2M K1B5616BAM K1B5616BBM K1S56161CM
Text: Technical Note on tBC This Application Note is applied to below products. - K1B5616B2M, K1B5616BAM, K1B5616BBM, K1S5616BCM, K1S56161CM - K1B2816B2A, K1B2816BAA, K1B2816BBA, K1S2816BCA, K1S28161CA June. 2006 Product Planning & Application Engineering Team MEMORY DIVISION
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K1B5616B2M,
K1B5616BAM,
K1B5616BBM,
K1S5616BCM,
K1S56161CM
K1B2816B2A,
K1B2816BAA,
K1B2816BBA,
K1S2816BCA,
K1S28161CA
K1B2816B2A
bba 1st
K1B5616B2M
K1B5616BAM
K1B5616BBM
K1S56161CM
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PDF
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K1B2816
Abstract: No abstract text available
Text: Preliminary UtRAM K1B2816BBA 128Mb 8M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1B2816BBA
128Mb
K1B2816
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PDF
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micron vccp
Abstract: TN-45-13 UtRAM Density micron 128MB NOR FLASH K1B2816
Text: TN-45-13: CellularRAM replacing UtRAM Introduction Technical Note Using CellularRAM to Replace UtRAM Introduction The Micron family of CellularRAM™ devices is designed to be backward compatible with 6T SRAM and early-generation asynchronous and page PSRAM. Designs requiring
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TN-45-13:
09005aef8201fbdc
TN4513
09005aef8201fb90/Source:
micron vccp
TN-45-13
UtRAM Density
micron 128MB NOR FLASH
K1B2816
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PDF
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SAMSUNG MEMORY 2006
Abstract: K1B2816B2A 128MB ADIE
Text: UtRAM 128Mb M-die 100nm & A-die(90nm) Comparison Aug. 2006 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng. Eng. Team Team The Leader in Memory Technology
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128Mb
100nm)
K1B2816B2A
K1B2816B6M
104Mhz
66Mhz
128Mb
SAMSUNG MEMORY 2006
K1B2816B2A
ADIE
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