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    Toshiba America Electronic Components TK20J60U(F)

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    K20J60U

    Abstract: k20j60 TK20J60U power Diode 200V 10A SC-65
    Text: K20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K20J60U Switching Regulator Applications Unit: mm VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V (Note 1) ID 20 Pulse (t = 1 ms) (Note 1) IDP 40 A 1 Drain power dissipation (Tc = 25°C)


    Original     		PDF TK20J60U K20J60U k20j60 TK20J60U power Diode 200V 10A SC-65

    k20j60

    Abstract: K20J60U
    Text: K20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K20J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V 1.0 0.3 0.25 5.45 ± 0.2 5.45 ± 0.2 4.8 MAX. Unit


    Original     		PDF TK20J60U k20j60 K20J60U

    K20J60U

    Abstract: k20j60 TK20J60U SC-65 k20j
    Text: K20J60U 東芝電界効果トランジスタ DTMOSⅡ シリコンNチャネルMOS形 K20J60U ○ スイッチングレギュレータ用 単位: mm 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 12 S (標準) z 漏れ電流が低い。 : IDSS = 100 A (最大) (VDS = 600V)


    Original     		PDF TK20J60U K20J60U k20j60 TK20J60U SC-65 k20j

    Untitled

    Abstract: No abstract text available
    Text: K20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K20J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V 5.45 ± 0.2 4.8 MAX. 1.0 ＋0.3 －0.25


    Original     		PDF TK20J60U

    k20j60u

    Abstract: 10A16 k20j60 TK20J60U SC-65 3012S
    Text: K20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K20J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V 5.45 ± 0.2 4.8 MAX. 1.0 ＋0.3 －0.25


    Original     		PDF TK20J60U k20j60u 10A16 k20j60 TK20J60U SC-65 3012S