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    K356 Search Results

    K356 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    HM2DK3568PLF Amphenol Communications Solutions Millipacs Accessories Discrimination Key having colour PASTEL ORANGE,PLUG MODULE and ROHS COMPLIANT Visit Amphenol Communications Solutions
    HM2DK3568RLF Amphenol Communications Solutions Millipacs Accessories Discrimination Key having colour PURE ORANGE ,RECEPTACLE MODULE and ROHS COMPLIANT Visit Amphenol Communications Solutions
    HM2DK3567RLF Amphenol Communications Solutions Millipacs Accessories Discrimination Key having colour STRAWBERRY RED,RECEPTACLE MODULE and ROHS COMPLIANT Visit Amphenol Communications Solutions
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    K356 Price and Stock

    KEMET Corporation PHE450PK3560JR05

    CAP FILM 560PF 5% 1KVDC RADIAL
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    DigiKey PHE450PK3560JR05 Box 3,896 1
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    Nexperia BUK9K35-60E,115

    MOSFET 2N-CH 60V 22A LFPAK56D
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    DigiKey BUK9K35-60E,115 Cut Tape 3,125 1
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    BUK9K35-60E,115 Digi-Reel 3,125 1
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    BUK9K35-60E,115 Reel 3,000 1,500
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    Mouser Electronics BUK9K35-60E,115 5,111
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    Newark BUK9K35-60E,115 Cut Tape 1,684 1
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    New Advantage Corporation BUK9K35-60E,115 9,000 1
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    KEMET Corporation PHE450MK3560JR05

    CAP FILM 560PF 5% 630VDC RADIAL
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    DigiKey PHE450MK3560JR05 Box 2,735 1
    • 1 $0.79
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    Amphenol Communications Solutions HM2DK3567RLF

    HM2DK3567RLF MPAC DISCR KEY RCPT
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    DigiKey HM2DK3567RLF Bulk 427 1
    • 1 $1.6
    • 10 $0.922
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    Eaton Bussmann EFDKA45K356E114BH

    CAP FILM 35UF 10% 450VDC RAD
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    DigiKey EFDKA45K356E114BH Bulk 246 1
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    Find more K356 price and stock on Findchips.com

    K356 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K3562M EPCOS IF Filter for Quasi/Split Sound Applications 38,00 MHz Original PDF
    K3565M EPCOS IF Filter for Quasi/Split Sound Applications 38,90 MHz Original PDF

    K356 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K3530

    Abstract: 4 CONDUCTOR 3.5mm jack k3505 K3502 3.5mm phone jack k3591 k3515 K3534 k356 k357
    Text: Phone Jack K3500 K356 2.5mm MONO JACK 2-CONDUCTOR OPEN CIRCUIT 1/4" PHONE JACK K35001 2.5mm STEREO JACK K3501 K357 2.5mm MONO JACK W/CABLE PROTECTOR 2-CONDUCTOR CLOSED CIRCUIT 1/4" PHONE JACK K3502 2.5mm STEREO JACK W/CABLE PROTECTOR K3503 K358 3.5mm MONO JACK


    Original     		PDF K3500 K35001 K3501 K3502 K3503 K3504 K3505 K3506 K3513 K3591 K3530 4 CONDUCTOR 3.5mm jack k3505 K3502 3.5mm phone jack k3591 k3515 K3534 k356 k357

    K3565M

    Abstract: k3565 B39389-K3565-M201
    Text: SAW multimedia filters Series/Type: K3565M The following products presented in this data sheet are being withdrawn. Ordering Code K3565M201 Substitute Product Date of Withdrawal 2011-01-14 Deadline Last Orders 2011-09-30 Last Shipments 2012-09-30 For further information please contact your nearest EPCOS sales office, which will also support you in selecting a


    Original     		PDF K3565M B39389K3565M201 K3565M k3565 B39389-K3565-M201

    Untitled

    Abstract: No abstract text available
    Text: IF Filters for Quasi/Split Sound Applications Series/Type: K3567D The following products presented in this data sheet are being withdrawn. Ordering Code K3567N301 Substitute Product Date of Withdrawal 2009-12-23 Deadline Last Orders 2010-06-30 Last Shipments


    Original     		PDF K3567D B39380K3567N301

    k3564

    Abstract: transistor K3564 K356 2SK35
    Text: K3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.)


    Original     		PDF 2SK3564 k3564 transistor K3564 K356 2SK35

    k3561

    Abstract: 2SK3561 K356
    Text: K3561 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI K3561 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.75 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 6.5 S (標準)


    Original     		PDF 2SK3561 SC-67 2-10U1B k3561 2SK3561 K356

    K3565

    Abstract: 2SK3565 K3565 data
    Text: K3565 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV K3565 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 2.0 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 4.5 S (標準)


    Original     		PDF 2SK3565 SC-67 2-10U1B K3565 2SK3565 K3565 data

    k3563

    Abstract: 2sK3563 2sK3563 datasheet
    Text: K3563 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI K3563 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.35 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 3.5 S (標準)


    Original     		PDF 2SK3563 SC-67 2-10U1B k3563 2sK3563 2sK3563 datasheet

    transistor k3568

    Abstract: k3568 2SK3568 K3568 equivalent k3568 transistor 2SK3568 equivalent K356 2sk3568 datasheet
    Text: K3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3568 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3568 transistor k3568 k3568 2SK3568 K3568 equivalent k3568 transistor 2SK3568 equivalent K356 2sk3568 datasheet

    2sk3562

    Abstract: k3562 transistor K3562 transistor k3562 k3562 voltage transistor compatible k3562 toshiba k3562 2SK3562 K3562
    Text: K3562 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3562 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.)


    Original     		PDF 2SK3562 2sk3562 k3562 transistor K3562 transistor k3562 k3562 voltage transistor compatible k3562 toshiba k3562 2SK3562 K3562

    2sk3569

    Abstract: transistor compatible k3569 k3569 transistor compatible 2SK3569 transistor k3569 K3569 DATASHEET K3569 equivalent K3569 data transistor 2SK3569 k3569 transistor
    Text: K3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.)


    Original     		PDF 2SK3569 2sk3569 transistor compatible k3569 k3569 transistor compatible 2SK3569 transistor k3569 K3569 DATASHEET K3569 equivalent K3569 data transistor 2SK3569 k3569 transistor

    k3562

    Abstract: 2SK3562 K3562 2SK3562 2sk3562 equivalent
    Text: K3562 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI K3562 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.9 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 5.0 S (標準)


    Original     		PDF 2SK3562 SC-67 2-10U1B 12h-c) k3562 2SK3562 K3562 2SK3562 2sk3562 equivalent

    K3561

    Abstract: transistor k3561 k3561 transistor k3561 Silicon N Channel MOS Type 2SK3561 equivalent 2SK3561 2sk3561 datasheet K356
    Text: TENTATIVE K3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅥ K3561 unit：ｍｍ Switching Regulator Applications 10±0.3 Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage


    Original     		PDF 2SK3561 K3561 transistor k3561 k3561 transistor k3561 Silicon N Channel MOS Type 2SK3561 equivalent 2SK3561 2sk3561 datasheet K356

    transistor K3564

    Abstract: No abstract text available
    Text: K3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV K3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		PDF 2SK3564 transistor K3564

    k3569

    Abstract: 2SK3569 transistor k3569 K3569 data transistor 2SK3569 k3569 transistor k3569 Silicon N Channel MOS Type 2SK3569 application
    Text: K3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		PDF 2SK3569 k3569 2SK3569 transistor k3569 K3569 data transistor 2SK3569 k3569 transistor k3569 Silicon N Channel MOS Type 2SK3569 application

    K3561

    Abstract: transistor k3561 k3561 transistor k3561 transistor application 2sk3561
    Text: K3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3561 K3561 transistor k3561 k3561 transistor k3561 transistor application 2sk3561

    K3565 transistor

    Abstract: transistor K3565 K3565 data k3565 Toshiba 2SK3565 2SK3565
    Text: K3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3565 K3565 transistor transistor K3565 K3565 data k3565 Toshiba 2SK3565 2SK3565

    transistor K3564

    Abstract: K3564 k3564 transistor transistor K3564 5 a K3564 toshiba 2SK3564
    Text: K3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3564 transistor K3564 K3564 k3564 transistor transistor K3564 5 a K3564 toshiba 2SK3564

    K3563

    Abstract: K3563 Transistor 2sK3563 datasheet 2sK3563
    Text: K3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3563 K3563 K3563 Transistor 2sK3563 datasheet 2sK3563

    transistor k2333

    Abstract: k3332 k2333 K3561 transistor k2182 K2182 k3562 k3272 transistor k1102 k0392
    Text: Multilayer Chip Capacitors X7R/B Characteristic Features ● ● ● ● l High volumetric efficiency Non-linear capacitance change High insulation resistance High pulse strength b s Applications ● ● ● ● Blocking Coupling Decoupling Interference suppression


    Original     		PDF KKE0272-V 30-K5273-K01 -K5333-K01 -K5393-K01 -K5473-K01 B37931-K0472-K01 C/C25 transistor k2333 k3332 k2333 K3561 transistor k2182 K2182 k3562 k3272 transistor k1102 k0392

    K3568

    Abstract: transistor k3568 2SK3568 K3568 equivalent
    Text: K3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3568 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3568 K3568 transistor k3568 2SK3568 K3568 equivalent

    K3566 transistor

    Abstract: No abstract text available
    Text: K3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK3566 K3566 transistor

    k3566

    Abstract: K3566 transistor K3566 data sheet 2SK3566 2SK3566 equivalent equivalent k3566 transistor k3566 K3566 equivalent k356 MARKING toshiba 133
    Text: K3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 5.6Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3566 k3566 K3566 transistor K3566 data sheet 2SK3566 2SK3566 equivalent equivalent k3566 transistor k3566 K3566 equivalent k356 MARKING toshiba 133

    transistor K3565

    Abstract: K3565 transistor k3565 K356 K3565 data 2SK3565 datasheet 2SK3565 equivalent 2SK3565 12160TC
    Text: K3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3565 transistor K3565 K3565 transistor k3565 K356 K3565 data 2SK3565 datasheet 2SK3565 equivalent 2SK3565 12160TC

    transistor compatible k3569

    Abstract: K3569 transistor k3569 2SK3569 equivalent 2SK3569 K3569 equivalent transistor compatible 2SK3569 K3569 data K3569 DATASHEET transistor 2SK3569
    Text: K3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.)


    Original     		PDF 2SK3569 transistor compatible k3569 K3569 transistor k3569 2SK3569 equivalent 2SK3569 K3569 equivalent transistor compatible 2SK3569 K3569 data K3569 DATASHEET transistor 2SK3569