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    KEMET Corporation PHE450PK3560JR05

    CAP FILM 560PF 5% 1KVDC RADIAL
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    DigiKey PHE450PK3560JR05 Box 3,865 1
    • 1 $0.7
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    • 100 $0.3382
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    • 10000 $0.22014
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    KEMET Corporation PHE450MK3560JR05

    CAP FILM 560PF 5% 630VDC RADIAL
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    DigiKey PHE450MK3560JR05 Box 2,665 1
    • 1 $0.7
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    • 100 $0.3382
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    Eaton Bussmann EFDKS45K356E114BH

    CAP FILM 35UF 10% 450VDC RAD
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    DigiKey EFDKS45K356E114BH Bulk 246 1
    • 1 $9.49
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    Eaton Bussmann EFDKS60K356E164DH

    CAP FILM 35UF 10% 600VDC RAD
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    DigiKey EFDKS60K356E164DH Bulk 176 1
    • 1 $10.21
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    Sager EFDKS60K356E164DH 70
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    Eaton Bussmann EFDKS70K356E164DH

    CAP FILM 35UF 10% 700VDC RAD
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    DigiKey EFDKS70K356E164DH Bulk 176 1
    • 1 $10.21
    • 10 $7.648
    • 100 $6.264
    • 1000 $5.27538
    • 10000 $5.0477
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    Sager EFDKS70K356E164DH 70
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    K356 Datasheets (2)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    K3562M EPCOS IF Filter for Quasi/Split Sound Applications 38,00 MHz Original PDF
    K3565M EPCOS IF Filter for Quasi/Split Sound Applications 38,90 MHz Original PDF

    K356 Datasheets Context Search

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    Type
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    PDF

    K3530

    Abstract: 4 CONDUCTOR 3.5mm jack k3505 K3502 3.5mm phone jack k3591 k3515 K3534 k356 k357
    Text: Phone Jack K3500 K356 2.5mm MONO JACK 2-CONDUCTOR OPEN CIRCUIT 1/4" PHONE JACK K35001 2.5mm STEREO JACK K3501 K357 2.5mm MONO JACK W/CABLE PROTECTOR 2-CONDUCTOR CLOSED CIRCUIT 1/4" PHONE JACK K3502 2.5mm STEREO JACK W/CABLE PROTECTOR K3503 K358 3.5mm MONO JACK


    Original     		K3500 K35001 K3501 K3502 K3503 K3504 K3505 K3506 K3513 K3591 K3530 4 CONDUCTOR 3.5mm jack k3505 K3502 3.5mm phone jack k3591 k3515 K3534 k356 k357 PDF

    K3565M

    Abstract: k3565 B39389-K3565-M201
    Text: SAW multimedia filters Series/Type: K3565M The following products presented in this data sheet are being withdrawn. Ordering Code K3565M201 Substitute Product Date of Withdrawal 2011-01-14 Deadline Last Orders 2011-09-30 Last Shipments 2012-09-30 For further information please contact your nearest EPCOS sales office, which will also support you in selecting a


    Original     		K3565M B39389K3565M201 K3565M k3565 B39389-K3565-M201 PDF

    Untitled

    Abstract: No abstract text available
    Text: IF Filters for Quasi/Split Sound Applications Series/Type: K3567D The following products presented in this data sheet are being withdrawn. Ordering Code K3567N301 Substitute Product Date of Withdrawal 2009-12-23 Deadline Last Orders 2010-06-30 Last Shipments


    Original     		K3567D B39380K3567N301 PDF

    k3564

    Abstract: transistor K3564 K356 2SK35
    Text: K3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.)


    Original     		2SK3564 k3564 transistor K3564 K356 2SK35 PDF

    k3561

    Abstract: 2SK3561 K356
    Text: K3561 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI K3561 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.75 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 6.5 S (標準)


    Original     		2SK3561 SC-67 2-10U1B k3561 2SK3561 K356 PDF

    K3565

    Abstract: 2SK3565 K3565 data
    Text: K3565 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV K3565 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 2.0 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 4.5 S (標準)


    Original     		2SK3565 SC-67 2-10U1B K3565 2SK3565 K3565 data PDF

    k3563

    Abstract: 2sK3563 2sK3563 datasheet
    Text: K3563 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI K3563 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.35 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 3.5 S (標準)


    Original     		2SK3563 SC-67 2-10U1B k3563 2sK3563 2sK3563 datasheet PDF

    transistor k3568

    Abstract: k3568 2SK3568 K3568 equivalent k3568 transistor 2SK3568 equivalent K356 2sk3568 datasheet
    Text: K3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3568 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3568 transistor k3568 k3568 2SK3568 K3568 equivalent k3568 transistor 2SK3568 equivalent K356 2sk3568 datasheet PDF

    2sk3562

    Abstract: k3562 transistor K3562 transistor k3562 k3562 voltage transistor compatible k3562 toshiba k3562 2SK3562 K3562
    Text: K3562 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3562 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.)


    Original     		2SK3562 2sk3562 k3562 transistor K3562 transistor k3562 k3562 voltage transistor compatible k3562 toshiba k3562 2SK3562 K3562 PDF

    2sk3569

    Abstract: transistor compatible k3569 k3569 transistor compatible 2SK3569 transistor k3569 K3569 DATASHEET K3569 equivalent K3569 data transistor 2SK3569 k3569 transistor
    Text: K3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.)


    Original     		2SK3569 2sk3569 transistor compatible k3569 k3569 transistor compatible 2SK3569 transistor k3569 K3569 DATASHEET K3569 equivalent K3569 data transistor 2SK3569 k3569 transistor PDF

    k3562

    Abstract: 2SK3562 K3562 2SK3562 2sk3562 equivalent
    Text: K3562 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI K3562 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.9 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 5.0 S (標準)


    Original     		2SK3562 SC-67 2-10U1B 12h-c) k3562 2SK3562 K3562 2SK3562 2sk3562 equivalent PDF

    K3561

    Abstract: transistor k3561 k3561 transistor k3561 Silicon N Channel MOS Type 2SK3561 equivalent 2SK3561 2sk3561 datasheet K356
    Text: TENTATIVE K3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅥ K3561 unit：ｍｍ Switching Regulator Applications 10±0.3 Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage


    Original     		2SK3561 K3561 transistor k3561 k3561 transistor k3561 Silicon N Channel MOS Type 2SK3561 equivalent 2SK3561 2sk3561 datasheet K356 PDF

    transistor K3564

    Abstract: No abstract text available
    Text: K3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV K3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		2SK3564 transistor K3564 PDF

    k3569

    Abstract: 2SK3569 transistor k3569 K3569 data transistor 2SK3569 k3569 transistor k3569 Silicon N Channel MOS Type 2SK3569 application
    Text: K3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3569 k3569 2SK3569 transistor k3569 K3569 data transistor 2SK3569 k3569 transistor k3569 Silicon N Channel MOS Type 2SK3569 application PDF

    K3561

    Abstract: transistor k3561 k3561 transistor k3561 transistor application 2sk3561
    Text: K3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3561 K3561 transistor k3561 k3561 transistor k3561 transistor application 2sk3561 PDF

    K3565 transistor

    Abstract: transistor K3565 K3565 data k3565 Toshiba 2SK3565 2SK3565
    Text: K3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3565 K3565 transistor transistor K3565 K3565 data k3565 Toshiba 2SK3565 2SK3565 PDF

    transistor K3564

    Abstract: K3564 k3564 transistor transistor K3564 5 a K3564 toshiba 2SK3564
    Text: K3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3564 transistor K3564 K3564 k3564 transistor transistor K3564 5 a K3564 toshiba 2SK3564 PDF

    K3563

    Abstract: K3563 Transistor 2sK3563 datasheet 2sK3563
    Text: K3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3563 K3563 K3563 Transistor 2sK3563 datasheet 2sK3563 PDF

    transistor k2333

    Abstract: k3332 k2333 K3561 transistor k2182 K2182 k3562 k3272 transistor k1102 k0392
    Text: Multilayer Chip Capacitors X7R/B Characteristic Features ● ● ● ● l High volumetric efficiency Non-linear capacitance change High insulation resistance High pulse strength b s Applications ● ● ● ● Blocking Coupling Decoupling Interference suppression


    Original     		KKE0272-V 30-K5273-K01 -K5333-K01 -K5393-K01 -K5473-K01 B37931-K0472-K01 C/C25 transistor k2333 k3332 k2333 K3561 transistor k2182 K2182 k3562 k3272 transistor k1102 k0392 PDF

    K3568

    Abstract: transistor k3568 2SK3568 K3568 equivalent
    Text: K3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3568 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3568 K3568 transistor k3568 2SK3568 K3568 equivalent PDF

    K3566 transistor

    Abstract: No abstract text available
    Text: K3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.)


    Original     		2SK3566 K3566 transistor PDF

    k3566

    Abstract: K3566 transistor K3566 data sheet 2SK3566 2SK3566 equivalent equivalent k3566 transistor k3566 K3566 equivalent k356 MARKING toshiba 133
    Text: K3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 5.6Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3566 k3566 K3566 transistor K3566 data sheet 2SK3566 2SK3566 equivalent equivalent k3566 transistor k3566 K3566 equivalent k356 MARKING toshiba 133 PDF

    transistor K3565

    Abstract: K3565 transistor k3565 K356 K3565 data 2SK3565 datasheet 2SK3565 equivalent 2SK3565 12160TC
    Text: K3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3565 transistor K3565 K3565 transistor k3565 K356 K3565 data 2SK3565 datasheet 2SK3565 equivalent 2SK3565 12160TC PDF

    transistor compatible k3569

    Abstract: K3569 transistor k3569 2SK3569 equivalent 2SK3569 K3569 equivalent transistor compatible 2SK3569 K3569 data K3569 DATASHEET transistor 2SK3569
    Text: K3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.)


    Original     		2SK3569 transistor compatible k3569 K3569 transistor k3569 2SK3569 equivalent 2SK3569 K3569 equivalent transistor compatible 2SK3569 K3569 data K3569 DATASHEET transistor 2SK3569 PDF