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    K3669 Price and Stock

    Vishay Intertechnologies CRCW0603100RFKEA

    Thick Film Resistors - SMD 1/10watt 100ohms 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI CRCW0603100RFKEA Reel 5,370,000 5,000
    • 1 -
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    • 10000 $0.00347
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    Murata Manufacturing Co Ltd DMS-30PC-0-GS-C

    Digital Panel Meters DIGITAL PNL MTR -0.2V TO 0.2V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI DMS-30PC-0-GS-C Bulk 12 1
    • 1 $60.97
    • 10 $53.13
    • 100 $47
    • 1000 $46.08
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    Vishay Intertechnologies CW010500R0JE73

    Wirewound Resistors - Through Hole 500 OHM 5% 10W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI CW010500R0JE73 Reel 500
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    • 1000 $1.04
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    K3669 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K3669

    Abstract: 2SK3669
    Text: K3669 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSVII K3669 ○ スイッチングレギュレータ用 ○ スイッチングアンプ用 ○ モータドライブ用 順方向伝達アドミタンスが高い。 : |Yfs| = 6 S (標準)


    Original     		PDF 2SK3669 K3669 2SK3669

    K3669

    Abstract: 2SK3669 MJ1005
    Text: K3669 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K3669 Switching Regulators, for Audio Amplifier and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 95 mΩ (typ.) · High forward transfer admittance: |Yfs| = 6 S (typ.)


    Original     		PDF 2SK3669 K3669 2SK3669 MJ1005

    K3669

    Abstract: K366 2SK3669
    Text: K3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII K3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6 S (typ.)


    Original     		PDF 2SK3669 K3669 K366 2SK3669

    K366

    Abstract: K3669 2SK3669
    Text: K3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII K3669 Switching Regulator, Audio Amplifier and Motor Drive Applications Unit: mm 1.5 ± 0. 2 6.5 ± 0.2 High forward transfer admittance: |Yfs| = 6 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 100 V)


    Original     		PDF 2SK3669 K366 K3669 2SK3669

    K3669

    Abstract: 2SK3669 MJ1005
    Text: K3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII K3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6 S (typ.)


    Original     		PDF 2SK3669 K3669 2SK3669 MJ1005

    2SK3669

    Abstract: K3669 MJ1005
    Text: K3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII K3669 Switching Regulator, Audio Amplifier and Motor Drive Applications Unit: mm 1.5 ± 0. 2 6.5 ± 0.2 High forward transfer admittance: |Yfs| = 6 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 100 V)


    Original     		PDF 2SK3669 2SK3669 K3669 MJ1005

    K3669

    Abstract: No abstract text available
    Text: K3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII K3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6 S (typ.)


    Original     		PDF 2SK3669 K3669

    Untitled

    Abstract: No abstract text available
    Text: K3669 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6 S (typ.)


    Original     		PDF 2SK3669