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Vishay Intertechnologies CRCW060323R2FKEA Thick Film Resistors - SMD 1/10watt 23.2ohms 1%
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TTI	CRCW060323R2FKEA	Reel	15,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.00297	Buy Now
Cornell Dubilier Electronics Inc MMP6P1K-F Film Capacitors 0.1uF 630V 10%
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TTI	MMP6P1K-F	Bulk			1,000	1 - 10 - 100 - 1000 $1.22 10000 $1.22	Buy Now
Dialight 5642210332F LED Circuit Board Indicators Backlight Tri-Level
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TTI	5642210332F	Bulk			390	1 - 10 - 100 - 1000 $1.7 10000 $1.7	Buy Now

K3797 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
K3797 Abstract: 2SK3797 2SK3797 equivalent Text: K3797 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSVI K3797 ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.32 Ω (標準) z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 7.5 S (標準)	Original	PDF	2SK3797 SC-67 2-10U1B K3797 2SK3797 2SK3797 equivalent
k3797 Abstract: K3797 Transistor 2SK3797 2sk3797 equivalent 400V DC circuits power control TC8020 2-10U1B Text: K3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) High forward transfer admittance: \|Yfs\| = 7.5 S (typ.)	Original	PDF	2SK3797 k3797 K3797 Transistor 2SK3797 2sk3797 equivalent 400V DC circuits power control TC8020 2-10U1B
K3797 Abstract: K3797 Transistor 2sk3797 equivalent 2SK3797 600VTH 2SK3797(Q) Text: K3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: \|Yfs\| = 7.5 S (typ.)	Original	PDF	2SK3797 K3797 K3797 Transistor 2sk3797 equivalent 2SK3797 600VTH 2SK3797(Q)
K3797 Transistor Abstract: K3797 2SK3797 54V4 transistor k3797 K379 Text: K3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: \|Yfs\| = 7.5 S (typ.)	Original	PDF	2SK3797 K3797 Transistor K3797 2SK3797 54V4 transistor k3797 K379
k3797 Abstract: K3797 Transistor K379 2SK3797 Text: K3797 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3797 Preliminary Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	PDF	2SK3797 k3797 K3797 Transistor K379 2SK3797
k3797 Abstract: K3797 Transistor Text: K3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: \|Yfs\| = 7.5 S (typ.)	Original	PDF	2SK3797 k3797 K3797 Transistor
k3797 Abstract: 2SK3797 Text: K3797 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSVI K3797 ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.32 Ω (標準) z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 7.5 S (標準)	Original	PDF	2SK3797 SC-67 2-10U1B k3797 2SK3797