k4a60db
Abstract: K4A60 K4A60D
Text: K4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω(typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)
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TK4A60DB
k4a60db
K4A60
K4A60D
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K4A60DB
Abstract: K4A60 TK4A60DB K4A60D
Text: K4A60DB 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K4A60DB ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.6 Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.2 S (標準)
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TK4A60DB
K4A60DB
K4A60
TK4A60DB
K4A60D
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K4A60DB
Abstract: TK4A60DB K4A60D k4a60
Text: K4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6Ω(typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)
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TK4A60DB
K4A60DB
TK4A60DB
K4A60D
k4a60
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k4a60db
Abstract: No abstract text available
Text: K4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)
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Original
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PDF
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TK4A60DB
k4a60db
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k4a60db
Abstract: No abstract text available
Text: K4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω(typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)
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Original
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PDF
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TK4A60DB
k4a60db
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