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    ns3340

    Abstract: No abstract text available
    Text: K4E660811B, K4E640811B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), package type (SOJ or


    Original     		K4E660811B, K4E640811B K4E660811B-JC 400mil ns3340 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M372E080 8 3BJ(T)0-C Buffered 8Mx72 DIMM (8Mx8 base) Revision 0.1 June 1998 DRAM MODULE M372E080(8)3BJ(T)0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		M372E080 8Mx72 M372E80 8Mx72bits 400mil 100Max PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M364E080 8 3BJ(T)0-C Buffered 8Mx64 DIMM (8Mx8 base) Revision 0.1 June 1998 DRAM MODULE M364E080(8)3BJ(T)0-C Revision History Version 0.0 (Sept. 1997) •Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		M364E080 8Mx64 8Mx64bits 400mil 100Max PDF