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    M372E080 Search Results

    M372E080 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M372E0803BJ0-C50 Samsung Electronics 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K Refresh, 5V Original PDF
    M372E0803BJ0-C60 Samsung Electronics 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K Refresh, 5V Original PDF
    M372E0803BT0-C50 Samsung Electronics 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K Refresh, 5V Original PDF
    M372E0803BT0-C60 Samsung Electronics 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K Refresh, 5V Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: M372E0805CT0-C DRAM MODULE Buffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM componenets are applied for this module. M372E0805CT0-C M372E0805CT0-C DRAM MODULE


    Original     		M372E0805CT0-C 8Mx72 4Mx16 M372E0805CT0-C 8Mx72bits PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M372E080 8 3CJ(T)0-C Buffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.1 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M372E080(8)3CJ(T)0-C DRAM MODULE M372E080(8)3CJ(T)0-C


    Original     		M372E080 8Mx72 8Mx72bits 400mil 168-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M372E080 8 3BJ(T)0-C Buffered 8Mx72 DIMM (8Mx8 base) Revision 0.1 June 1998 DRAM MODULE M372E080(8)3BJ(T)0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		M372E080 8Mx72 M372E80 8Mx72bits 400mil 100Max PDF