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    k4n1g164qe-hc20

    Abstract: k4n1g164qe
    Text: 1Gb gDDR2 SDRAM K4N1G164QE 1Gbit gDDR2 SDRAM 84FBGA with Lead-Free & Halogen-Free RoHS compliant Revision 1.2 December 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


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    K4N1G164QE 84FBGA k4n1g164qe-hc20 k4n1g164qe PDF

    Untitled

    Abstract: No abstract text available
    Text: 1Gb gDDR2 SDRAM K4N1G164QE 1Gbit gDDR2 SDRAM 84FBGA with Lead-Free & Halogen-Free RoHS compliant Revision 1.1 November 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


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    K4N1G164QE 84FBGA PDF

    K4N1G164QE

    Abstract: k4n1g164qe-hc20
    Text: Rev. 1.33, Apr.2010 K4N1G164QE 1Gb E-die gDDR2 SDRAM 84 FBGA with Lead-Free & Halogen-Free RoHS Compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


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    K4N1G164QE 6-10per) 11-50per) K4N1G164QE k4n1g164qe-hc20 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1Gb gDDR2 SDRAM K4N1G164QE 1Gbit gDDR2 SDRAM 84FBGA with Lead-Free & Halogen-Free RoHS compliant Revision 1.3 December 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


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    K4N1G164QE 84FBGA PDF

    winbond wpce773la0dg

    Abstract: VT1702S G1454R41U ICS9LPRS480BKLFT SCD1U25V3KX-GP MMBT3904-4-GP c5696 WPCE773LA0DG 1gp transistor winbond 25x16
    Text: 5 4 3 2 SJM50-PU Block Diagram 1 SYSTEM DC/DC Project code: 91.4FC01.001 PCB P/N : 48.4FC01.0SB REVISION : 08256-SB 40 TPS51125 INPUTS OUTPUTS 5V_S5 8A 3D3V_S5(6A) 5V_AUX_S5 DCBATOUT D AMD Giffin CPU S1G2 (35W) Thermal Sensor CLK GEN. SMSC 31 Video RAM 4,5,6,7


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    SJM50-PU 4FC01 08256-SB TPS51125 TPS51124 EMC2103 ICS9LPRS480BKLFT 638-Pin uFCPGA638 winbond wpce773la0dg VT1702S G1454R41U ICS9LPRS480BKLFT SCD1U25V3KX-GP MMBT3904-4-GP c5696 WPCE773LA0DG 1gp transistor winbond 25x16 PDF

    k4w2g1646

    Abstract: GDDR K4J52324Q 54NS k4j10324qd-hc k4n51163qe-zc K4J55323 K4W1G1646D-EC K4W1G1646E A/SAMSUNG GDDR3
    Text: Date : February. 9, 2009 Application Application Note Note Graphic Memory Dout Valid Window at DLL-Off Mode Product Planning & Application Eng.Team Memory Technology & Product Division Samsung Electronics Co., Ltd San #16 Banwol-Ri, Taean-Eup Hwasung-City, Kyungki-Do, Korea R.O.K


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    800Mbps K4N51163QE-ZC 100MHz 166MHz K4J55323QI-BC 200MHz 252MHz K4N56163QG-GC k4w2g1646 GDDR K4J52324Q 54NS k4j10324qd-hc k4n51163qe-zc K4J55323 K4W1G1646D-EC K4W1G1646E A/SAMSUNG GDDR3 PDF

    k4g10325fe-hc04

    Abstract: samsung gddr5 GDDR5 K4G10325FE K4W2G1646C K4G20325FC k4w2g1646 POD-15 K4W1G1646E gddr5 samsung
    Text: Jul. 2010 Graphic Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.


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    K4W2G1646C HC1A/11 HC7A/08 A/12/14 16Mx32 128Mx16 K4J52324KI 96ball 512Mb 136ball k4g10325fe-hc04 samsung gddr5 GDDR5 K4G10325FE K4W2G1646C K4G20325FC k4w2g1646 POD-15 K4W1G1646E gddr5 samsung PDF

    RTL8111DL

    Abstract: 216-0728020 RTL8111d ASM1442 ESFC Rg156 RG158 tps51427 LA-5162P ENE KB 926
    Text: A B C D E Compal Model Name: KAM01 DIS KAM00(UMA) PCB NO: DA80000E800 LA-5162P R10(A00)(DIS & UMA) 1 BOM P/N: 46170431L11 (DIS) 46170431L01 (UMA) 1 Liver-Pool 13.3" Compal Confidential Schematic Document 2 2 Penryn + Cantiga(GM45) + ICH9-M 2009 / 06 / 01


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    KAM01 KAM00 DA80000E800 LA-5162P 46170431L11 46170431L01 46170431L11 LA-5162P RTL8111DL 216-0728020 RTL8111d ASM1442 ESFC Rg156 RG158 tps51427 ENE KB 926 PDF

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


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    BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B PDF

    amd 216-0674026

    Abstract: 216-0674026 amd 218s7ebla12fg KB926 SB710 KAV10 ALC269X APL5607 FBMA-L11-201209-221LMA30T ISL6251
    Text: A B C D E 1 1 Compal Confidential 2 2 NAL00 Schematics Document AMD L310/L110 Processor with RS780MN/SB710/M92-S2/S3 LP 2009-04-24 3 3 REV:0.2 4 4 2008/10/06 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2009/10/06 Deciphered Date


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    NAL00 L310/L110 RS780MN/SB710/M92-S2/S3 A5401 50V8J 50V8J amd 216-0674026 216-0674026 amd 218s7ebla12fg KB926 SB710 KAV10 ALC269X APL5607 FBMA-L11-201209-221LMA30T ISL6251 PDF

    RTS5159

    Abstract: amd 216-0674026 216-0674026 Realtek rts5159 218S7EBLA12FG TIGRIS CHARGER IC JMB385 KB926 SN0806081RHBR AR8131L-AL1E
    Text: A B C D E 1 1 Compal Confidential 2 2 KBLG0/NBLG0 Schematics Document AMD Puma JV40-PU : Griffin Processor with RS780MN/SB700/M92-M2 XT Tigris (JV40-TR) : Caspian Processor with RS880M/SB710/M92-M2 XT 2009-03-11 3 3 REV:1.0 4 4 2008/10/06 Issued Date Compal Electronics, Inc.


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    JV40-PU) RS780MN/SB700/M92-M2 JV40-TR) RS880M/SB710/M92-M2 A4921P 10V4Z 50V7K 10V4Z A4921P RTS5159 amd 216-0674026 216-0674026 Realtek rts5159 218S7EBLA12FG TIGRIS CHARGER IC JMB385 KB926 SN0806081RHBR AR8131L-AL1E PDF

    TP2801

    Abstract: slg8sp513v diode tp806 RTM875N-606-VD-GR C5855 rtm875n-606 RTL8103 92HD81B1X5 ST330U2D5VDM-13GP 1SMB22AT3G-GP-U
    Text: 5 4 3 2 1 D D Alba Discrete ATI M92-LP gDDR2 Schematics uFCPGA Mobile Penryn Intel Cantiga-PM + ICH9M C C 2009-03-23 REV : SA B B DY : Nopop Component GM : Pop when Cantiga is GM PM : Pop when Cantiga is PM G/P : BOM control if Cantiga is PM A A <Core Design>


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    M92-LP ISL6266A SLG8SP513VTRove R2218 R2220 C3005. R4108. PD3107 1SMB22AT3G. PC3208, TP2801 slg8sp513v diode tp806 RTM875N-606-VD-GR C5855 rtm875n-606 RTL8103 92HD81B1X5 ST330U2D5VDM-13GP 1SMB22AT3G-GP-U PDF

    samsung gddr5

    Abstract: k4w2g1646 GDDR5 K4J52324K K4J52324KI SAMSUNG GDDR3 GDDR5 application note samsung K4W1G1646D-EC gddr5 samsung K4J10324KE
    Text: Rev. 1.1, Nov. 2009 Graphic Memory Dout Valid Window at DLL-off mode A guide for user to use graphic memory at DLL-off mode Rev.1.1 1. Introduction The graphic industry keeps driving memory vendors to increase the memory frequency as fast as they can. Through continuous efforts, now GDDR3 hits over


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    166MHz. 200MHz 300MHz K4J52324QE-BC 220MHz 252MHz K4J52324KI-HC 350MHz K4J52324QH-HC K4W2G1646B-HC samsung gddr5 k4w2g1646 GDDR5 K4J52324K K4J52324KI SAMSUNG GDDR3 GDDR5 application note samsung K4W1G1646D-EC gddr5 samsung K4J10324KE PDF

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


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    BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0 PDF