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    K4S161622 Search Results

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    K4S161622 Price and Stock

    Samsung Semiconductor K4S161622E-TC70

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    Bristol Electronics K4S161622E-TC70 21,990
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    Quest Components K4S161622E-TC70 17,592
    • 1 $8.25
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    K4S161622E-TC70 17,592
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    Samsung Semiconductor K4S161622H-TC60

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    Bristol Electronics K4S161622H-TC60 7,672 2
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    Quest Components K4S161622H-TC60 5,364
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    K4S161622H-TC60 1
    • 1 $2.5
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    Samsung Semiconductor K4S161622H-UC60

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    Bristol Electronics K4S161622H-UC60 2,829
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    K4S161622H-UC60 195
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    Samsung Semiconductor K4S161622H-TC-60

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    Bristol Electronics K4S161622H-TC-60 75
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    Samsung Semiconductor K4S161622E-TC60

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    Bristol Electronics K4S161622E-TC60 39 1
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    Quest Components K4S161622E-TC60 1,704
    • 1 $6.75
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    K4S161622E-TC60 31
    • 1 $8.4
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    K4S161622 Datasheets (64)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S161622D Samsung Electronics 1M x 16 SDRAM Original PDF
    K4S161622D Samsung Electronics 512K x 16-Bit x 2 Banks Synchronous DRAM Original PDF
    K4S161622D Family Samsung Electronics 1M x 16 SDRAM Original PDF
    K4S161622D-LC10 Samsung Electronics DRAM Chip: SDRAM: 2MByte: 3.3V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4S161622D-LC60 Samsung Electronics DRAM Chip: SDRAM: 2MByte: 3.3V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4S161622D-LC70 Samsung Electronics DRAM Chip: SDRAM: 2MByte: 3.3V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4S161622D-LC80 Samsung Electronics DRAM Chip: SDRAM: 2MByte: 3.3V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4S161622D-LC/L10 Samsung Electronics DRAM Chip: 1Mx16 SDRAM 512K x 16 Bitx2 Banks Synchronous DRAM LVTTL Original PDF
    K4S161622D-LC/L55 Samsung Electronics DRAM Chip: 1Mx16 SDRAM 512K x 16 Bitx2 Banks Synchronous DRAM LVTTL Original PDF
    K4S161622D-LC/L70 Samsung Electronics DRAM Chip: 1Mx16 SDRAM 512K x 16 Bitx2 Banks Synchronous DRAM LVTTL Original PDF
    K4S161622D-LC/L80 Samsung Electronics DRAM Chip: 1Mx16 SDRAM 512K x 16 Bitx2 Banks Synchronous DRAM LVTTL Original PDF
    K4S161622D-LE10 Samsung Electronics DRAM Chip: 1Mx16 SDRAM Original PDF
    K4S161622D-LE50 Samsung Electronics DRAM Chip: 1Mx16 SDRAM Original PDF
    K4S161622D-LE55 Samsung Electronics DRAM Chip: 1Mx16 SDRAM Original PDF
    K4S161622D-LE80 Samsung Electronics DRAM Chip: 1Mx16 SDRAM Original PDF
    K4S161622D-LI10 Samsung Electronics DRAM Chip: 1Mx16 SDRAM Original PDF
    K4S161622D-LI50 Samsung Electronics DRAM Chip: 1Mx16 SDRAM Original PDF
    K4S161622D-LI55 Samsung Electronics DRAM Chip: 1Mx16 SDRAM Original PDF
    K4S161622D-LI60 Samsung Electronics DRAM Chip: 1Mx16 SDRAM Original PDF
    K4S161622D-LI/P10 Samsung Electronics DRAM Chip: 1Mx16 SDRAM 512K x 16 Bitx2 Banks Synchronous DRAM LVTTL Original PDF

    K4S161622 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4S161622H-UC60

    Abstract: K4S161622H-UC70 uc60 K4S161622H-UC80 K4S161622H K4S161622H-UC55
    Text: K4S161622H CMOS SDRAM 16Mb H-die SDRAM Specification 50 TSOP-II with Pb-Free RoHS compliant Revision 1.4 August 2004 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.4 August 2004 K4S161622H CMOS SDRAM Revision History


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    PDF K4S161622H K4S161622H A10/AP K4S161622H-UC60 K4S161622H-UC70 uc60 K4S161622H-UC80 K4S161622H-UC55

    Untitled

    Abstract: No abstract text available
    Text: K4S161622D CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.5 September 2000 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.5 Sep. '00 K4S161622D CMOS SDRAM Revision History


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    PDF K4S161622D 16bit K4S161622D-70. K4S161622D 50-TSOP2-400CF 20MAX

    Untitled

    Abstract: No abstract text available
    Text: K4S161622D-TI/P CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Industrial Temperature Revision 1.0 June 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 Jun . 1999 K4S161622D-TI/P


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    PDF K4S161622D-TI/P 16bit K4S161622D K4S161622D 50-TSOP2-400F

    K4S161622E-TI

    Abstract: No abstract text available
    Text: K4S161622E-TI/E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Industrial/ExtendedTemperature Revision 0.0 June 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev 0.0 Jun '01 K4S161622E-TI/E


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    PDF K4S161622E-TI/E 16bit K4S161622E 50-TSOP2-400CF 20MAX 10MAX 075MAX K4S161622E-TI

    K4S161622H-UC60

    Abstract: No abstract text available
    Text: K4S161622H CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL 50 TSOP-II with Pb-Free RoHS compliant Revision 1.3 May 2004 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.3 May 2004 K4S161622H


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    PDF K4S161622H 16bit A10/AP K4S161622H-UC60

    Untitled

    Abstract: No abstract text available
    Text: K4S161622E-TI/E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Industrial/ExtendedTemperature Revision 1.1 Jan 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.1 Jan '03 K4S161622E-TI/E


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    PDF K4S161622E-TI/E 16bit 2K/32ms) 50-TSOP2-400CF 20MAX 10MAX 075MAX

    K4S161622

    Abstract: K4S161622D
    Text: K4S161622D-TI/E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Industrial/ExtendedTemperature Revision 1.2 Jan 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.2 Jan '03 K4S161622D-TI/E


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    PDF K4S161622D-TI/E 16bit K4S161622D 166MHz) K4S161622D 50-TSOP2-400CF K4S161622

    K4S161622H

    Abstract: K4S161622H-TC60 K4S161622H-TC55 K4S161622H-TC70 K4S161622H-TC80
    Text: Target K4S161622H CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Target Revision 0.3 October 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev 0.3 October '03 Target K4S161622H CMOS SDRAM


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    PDF K4S161622H 16bit 200MHz. K4S161622H 50-TSOP2-400CF 20MAX K4S161622H-TC60 K4S161622H-TC55 K4S161622H-TC70 K4S161622H-TC80

    Untitled

    Abstract: No abstract text available
    Text: K4S161622H CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.0 November 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.0 November '03 K4S161622H CMOS SDRAM Revision History


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    PDF K4S161622H 16bit 200MHz. 50-TSOP2-400CF 20MAX 10MAX

    Untitled

    Abstract: No abstract text available
    Text: K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 0.2 Oct 2002 Samsung Electronics reserves the right to change products or specification without notice. Rev 0.2 Oct. '02 K4S161622E CMOS SDRAM 512K x 16Bit x 2 Banks Synchronous DRAM


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    PDF K4S161622E 16bit 2K/32ms) 50-TSOP2-400CF 20MAX 10MAX 075MAX

    K4S161622H-UC60

    Abstract: No abstract text available
    Text: K4S161622H CMOS SDRAM 16Mb H-die SDRAM Specification 50 TSOP-II with Pb-Free RoHS compliant Revision 1.4 August 2004 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.4 August 2004 K4S161622H CMOS SDRAM Revision History


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    PDF K4S161622H 183MHz 166MHz K4S161622H-UC60

    K4S161622E-TC10

    Abstract: K4S161622E-TC60 K4S161622E K4S161622E-TC55 K4S161622E-TC70 K4S161622E-TC80
    Text: K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.1 Jan 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.1 Jan '03 K4S161622E CMOS SDRAM 512K x 16Bit x 2 Banks Synchronous DRAM


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    PDF K4S161622E 16bit K4S161622E 50-TSOP2-400CF 20MAX 10MAX 075MAX K4S161622E-TC10 K4S161622E-TC60 K4S161622E-TC55 K4S161622E-TC70 K4S161622E-TC80

    K4S161622E-TC60

    Abstract: K4S161622E-TC80 K4S161622E K4S161622E-TC10 K4S161622E-TC70 samsung k4s161622e
    Text: K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 0.0 March 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev 0.0 Mar. '01 K4S161622E CMOS SDRAM 512K x 16Bit x 2 Banks Synchronous DRAM


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    PDF K4S161622E 16bit K4S161622E 50-TSOP2-400CF 20MAX 10MAX 075MAX K4S161622E-TC60 K4S161622E-TC80 K4S161622E-TC10 K4S161622E-TC70 samsung k4s161622e

    Untitled

    Abstract: No abstract text available
    Text: K4S161622H CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.1 December 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.1 December '03 K4S161622H CMOS SDRAM Revision History


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    PDF K4S161622H 16bit 200MHz.

    K4S161622D

    Abstract: No abstract text available
    Text: K4S161622D CMOS SDRAM 512K x 16Bit x 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the


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    PDF K4S161622D 16Bit K4S161622D 50-TSOP2-400CF 20MAX 10MAX 075MAX 80TYP 05MIN

    BT601

    Abstract: TVP5146M2 TVP5147M1 TVP5150AM1 TVP5151 TVP5160 SERVICE MANUAL tv samsung 4N7 250 Y2 capacitor tvp5158 program manual SECAM encoder
    Text: TVP5160 NTSC/PAL/SECAM/Component 2x10-Bit Digital Video Decoder Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not


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    PDF TVP5160 2x10-Bit SLES135E BT601 TVP5146M2 TVP5147M1 TVP5150AM1 TVP5151 TVP5160 SERVICE MANUAL tv samsung 4N7 250 Y2 capacitor tvp5158 program manual SECAM encoder

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


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    PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    Untitled

    Abstract: No abstract text available
    Text: TVP5160 NTSC/PAL/SECAM/Component 2x10-Bit Digital Video Decoder Data Manual Literature Number: SLES135 February 2005 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications,


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    PDF TVP5160 2x10-Bit SLES135

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


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    PDF 256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260

    Untitled

    Abstract: No abstract text available
    Text: TVP5160 NTSC/PAL/SECAM/Component 2x10-Bit Digital Video Decoder Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not


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    PDF TVP5160 2x10-Bit SLES135E SLES135E

    SMPTE 1080p level a

    Abstract: No abstract text available
    Text: 0XOWL GEN GF9330 High Performance SDTV/HDTV Deinterlacer PRELIMINARY DATA SHEET DEVICE OVERVIEW • De-interlace, Pass-Through and Film Frame Rate Down Conversion modes of operation The GF9330 is a high performance VDSP engine that performs high quality de-interlacing of interlaced digital


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    PDF GF9330 10-bit 12-bit C-101, SMPTE 1080p level a

    Video cvbs 656

    Abstract: TVP5160PNP PP 601-56 SERVICE MANUAL samsung television BT601 TVP5160 SERVICE MANUAL tv samsung
    Text: TVP5160 NTSC/PAL/SECAM/Component 2x10-Bit Digital Video Decoder Data Manual Literature Number: SLES135A February 2005 − Revised April 2006 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications,


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    PDF TVP5160 2x10-Bit SLES135A Video cvbs 656 TVP5160PNP PP 601-56 SERVICE MANUAL samsung television BT601 TVP5160 SERVICE MANUAL tv samsung

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


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    PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    5.1 home theatre basic diagram

    Abstract: K4S161622C GF9331-CBP GF9330 GF9331 1080p video encoder 720p 25hz
    Text: GF9331 HDTV/SDTV Motion Co-processor DATA SHEET DEVICE OVERVIEW • support for 10/8-bit HDTV/SDTV input video signals The GF9331 is a high performance motion co-processor that is used in conjunction with Gennum's GF9330 HDTV/SDTV 10-bit De-interlacer. Together, the GF9331 and


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    PDF GF9331 10/8-bit GF9331 GF9330 10-bit GF9330 1080p60. 5.1 home theatre basic diagram K4S161622C GF9331-CBP 1080p video encoder 720p 25hz