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    K4S641632KUC75 Price and Stock

    Samsung Semiconductor K4S641632K-UC75

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    Bristol Electronics K4S641632K-UC75 183
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    Quest Components K4S641632K-UC75 140
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    K4S641632K-UC75 60
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    Samsung Semiconductor K4S641632KUC75

    64MBIT K-DIE SDRAM Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54
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    ComSIT USA K4S641632KUC75 855
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    Samsung Electronics Co. Ltd K4S641632K-UC75T

    SD 4Mx16 PC133
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    Win Source Electronics K4S641632K-UC75T 4,100
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    Samsung Electronics Co. Ltd K4S641632K-UC75

    DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54-Pin TSOP-II T/R
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    Win Source Electronics K4S641632K-UC75 3,031
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    K4S641632KUC75 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S641632K-UC75 Samsung Electronics 64Mb K-die SDRAM Original PDF
    K4S641632K-UC75000 Samsung Electronics 64Mb K-die SDRAM Original PDF

    K4S641632KUC75 Datasheets Context Search

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    K4S641632K-UC75

    Abstract: h8sx K4S641632K R1LV1616RSD-7SR samsung BCK0
    Text: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Cluster Transfer Introduction The EXDMAC function is used to transfer data from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area in cluster transfer mode.


    Original     		PDF H8SX/1668R H8SX/166products REJ06B0694-0100/Rev K4S641632K-UC75 h8sx K4S641632K R1LV1616RSD-7SR samsung BCK0

    h8sx

    Abstract: R1LV1616RSD-7SR K4S641632K-UC75
    Text: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Repeat Transfer Introduction The EXDMAC function is used to transfer data from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area in repeat transfer mode.


    Original     		PDF H8SX/1668R H8SX/1668R REJ06B0693-0100/Rev h8sx R1LV1616RSD-7SR K4S641632K-UC75

    K4S641632K-UC75

    Abstract: h8sx R1LV1616RSD-7SR K4S641632KUC75
    Text: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Normal Transfer Introduction The EXDMAC function is used to transfer data from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area in normal transfer mode.


    Original     		PDF H8SX/1668R H8SX/1668Rproducts REJ06B0691-0100/Rev K4S641632K-UC75 h8sx R1LV1616RSD-7SR K4S641632KUC75

    K4S641632K-UC75

    Abstract: samsung k4s641632k-uc75 h8sx R1LV1616RSD-7SR
    Text: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Block Transfer Introduction The EXDMAC function is used to transfer data from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area in block transfer mode.


    Original     		PDF H8SX/1668R H8SX/1668R REJ06B0692-0100/Rev K4S641632K-UC75 samsung k4s641632k-uc75 h8sx R1LV1616RSD-7SR

    K4S641632K-UC75

    Abstract: R1LV1616RSD-7SR LV161 h8sx
    Text: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Extended Repeat Area Function Introduction The extended repeat area function of the EXDMAC in normal transfer mode is used to transfer data from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area.


    Original     		PDF H8SX/1668R REJ06B0745-0100/Rev K4S641632K-UC75 R1LV1616RSD-7SR LV161 h8sx

    K4S641632K-UC75

    Abstract: SAMSUNG K4S641632K-UC75 K4S641632K R1LV1616RSD-7SR h8sx uc75 LV1616RSD-7SR
    Text: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Offset Addition Introduction Data are transferred by the EXDMAC function from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area using normal transfer mode where the transfer address is updated by adding a specified offset.


    Original     		PDF H8SX/1668R REJ06B0695-0100/Rev K4S641632K-UC75 SAMSUNG K4S641632K-UC75 K4S641632K R1LV1616RSD-7SR h8sx uc75 LV1616RSD-7SR

    K4S641632K-UC75

    Abstract: K4S641632K _INITSCT
    Text: APPLICATION NOTE H8SX Family Synchronous DRAM Operation after Cancellation of Deep Software Standby Mode Introduction This application note describes the method for accessing synchronous DRAM SDRAM after cancellation of deep software standby mode. This method makes it possible to avoid problems related to the period of Bφ and SDRAMφ output instability


    Original     		PDF H8SX/1668R REJ06B0814-0100/Rev K4S641632K-UC75 K4S641632K _INITSCT