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    K6A50D Search Results

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    K6A50D Price and Stock

    Toshiba America Electronic Components TK6A50D(STA4,Q,M)

    MOSFET N-CH 500V 6A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK6A50D(STA4,Q,M) Tube 30 1
    • 1 $1.86
    • 10 $1.86
    • 100 $1.86
    • 1000 $0.57937
    • 10000 $0.495
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    Mouser Electronics TK6A50D(STA4,Q,M)
    • 1 $1.49
    • 10 $1.48
    • 100 $0.709
    • 1000 $0.495
    • 10000 $0.495
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    TME TK6A50D(STA4,Q,M) 1
    • 1 $0.744
    • 10 $0.531
    • 100 $0.478
    • 1000 $0.478
    • 10000 $0.478
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    EBV Elektronik TK6A50D(STA4,Q,M) 19 Weeks 50
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    Toshiba America Electronic Components TK6A50D(STA4QM)

    Trans MOSFET N-CH 500V 6A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK6A50D(STA4,Q,M))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK6A50D(STA4QM) Tube 32 Weeks 50
    • 1 -
    • 10 -
    • 100 $0.59004
    • 1000 $0.5346
    • 10000 $0.5346
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    K6A50D Datasheets Context Search

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    K6A50D

    Abstract: K*A50D TK6A50D
    Text: K6A50D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K6A50D スイッチングレギュレータ用 単位: mm : IDSS = 10 A (最大) 漏れ電流が低い。 A 3.9 3.0 : |Yfs| = 2.5 S (標準) 順方向伝達アドミタンスが高い。


    Original     		PDF TK6A50D K6A50D K*A50D TK6A50D

    K6A50D

    Abstract: TK6A50D
    Text: K6A50D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K6A50D スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.2 Ω (標準) : IDSS = 10 A (最大) 漏れ電流が低い。 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2


    Original     		PDF TK6A50D K6A50D TK6A50D

    TK6A50D

    Abstract: k6a50d K6A5 TK6A K6a50
    Text: K6A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A50D Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		PDF TK6A50D TK6A50D k6a50d K6A5 TK6A K6a50

    K6A50D

    Abstract: TK6A TK6A50D K*A50D
    Text: K6A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A50D Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		PDF TK6A50D K6A50D TK6A TK6A50D K*A50D

    Untitled

    Abstract: No abstract text available
    Text: K6A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K6A50D Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.2 (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		PDF TK6A50D

    K6A50D

    Abstract: No abstract text available
    Text: K6A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A50D Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		PDF TK6A50D K6A50D