Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    K6A55DA Search Results

    SF Impression Pixel

    K6A55DA Price and Stock

    Toshiba America Electronic Components TK6A55DA(STA4,Q,M)

    MOSFET N-CH 550V 5.5A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK6A55DA(STA4,Q,M) Tube 1
    • 1 $1.97
    • 10 $1.97
    • 100 $1.97
    • 1000 $0.62077
    • 10000 $0.5375
    		Buy Now
    Mouser Electronics TK6A55DA(STA4,Q,M)
    • 1 $1.59
    • 10 $1.38
    • 100 $0.758
    • 1000 $0.537
    • 10000 $0.537
    		Get Quote

    Toshiba America Electronic Components TK6A55DA(STA4

    Trans MOSFET N-CH 550V 5.5A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK6A55DA(STA4,Q,M))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK6A55DA(STA4 Tube 32 Weeks 50
    • 1 -
    • 10 -
    • 100 $0.6407
    • 1000 $0.5805
    • 10000 $0.5805
    		Buy Now

    K6A55DA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: K6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K6A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.25 (typ.) High forward transfer admittance: |Yfs| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original     		PDF TK6A55DA

    K6A55DA

    Abstract: TK6A55DA
    Text: K6A55DA 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K6A55DA ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 3.2 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 550 V)


    Original     		PDF TK6A55DA K6A55DA TK6A55DA

    K6A55DA

    Abstract: No abstract text available
    Text: K6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.25 Ω (typ.) High forward transfer admittance: |Yfs| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original     		PDF TK6A55DA K6A55DA

    K6A55DA

    Abstract: VDD200 TK6A55DA
    Text: K6A55DA 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K6A55DA ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 3.2 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 550 V)


    Original     		PDF TK6A55DA K6A55DA VDD200 TK6A55DA

    K6A55DA

    Abstract: TK6A55DA TK6A
    Text: K6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.25 Ω (typ.) High forward transfer admittance: |Yfs| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original     		PDF TK6A55DA K6A55DA TK6A55DA TK6A

    K6A55DA

    Abstract: TK6A55DA K6A5 TK6A
    Text: K6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.26 Ω (typ.) High forward transfer admittance: |Yfs| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original     		PDF TK6A55DA K6A55DA TK6A55DA K6A5 TK6A