K6F4016U6E Search Results

K6F4016U6E Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
K6F4016U6E		Samsung Electronics	K6F4016U6E 256K x 16-Bit Super Low Power and Low Voltage Full CMOS Static RAM, Organization = 256K x 16, Vcc(V) = 2.7~3.3, Speed-tAA(ns) = 55, 70, Operating Temperature = i, Operating Current(mA) = 3, Standby Current(uA) = 1.0, Package = 48TBGA		Original	PDF
K6F4016U6E Family		Samsung Electronics	256K x 16-Bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet		Original	PDF

K6F4016U6E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
K6F4016U6E-EF55 Abstract: K6F4016U6E K6F4016U6E-F K6F4016U6E-EF70 Text: K6F4016U6E Family CMOS SRAM Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft October 25, 2000 Preliminary 1.0 Finalize March 12, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and	Original	PDF	K6F4016U6E 256Kx16 55/Typ. 35/Typ. K6F4016U6E-EF55 K6F4016U6E-F K6F4016U6E-EF70
Untitled Abstract: No abstract text available Text: Preliminary K6F4016U6E Family CMOS SRAM Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark October 25, 2000 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and	Original	PDF	K6F4016U6E 256Kx16 35/Typ. 55/Typ.
K6F4016U6E-EF55 Abstract: K6F4016U6E-EF70 Text: K6F4016U6E Family CMOS SRAM Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft October 25, 2000 Preliminary 1.0 Finalize March 12, 2001 Final 2.0 Revise	Original	PDF	K6F4016U6E 256Kx16 48-TBGA 58/Typ. 32/Typ. K6F4016U6E-EF55 K6F4016U6E-EF70
RISC-Processor s3c2410 Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH	Original	PDF	BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
TSOP44 Package Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70 Text: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments	Original	PDF
KM62256BLG-7 Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12 Text: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC	Original	PDF	C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5 IS61C632A-5TQ C7C1335-7AC KM62256BLG-7 K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12