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K6F8016U3 Price and Stock

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Samsung Semiconductor K6F8016U3A-TF55 Static RAM, 512Kx16, 44 Pin, Plastic, TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	K6F8016U3A-TF55		504			1 $45.96 10 $45.96 100 $45.96 1000 $34.47 10000 $34.47	Buy Now
	K6F8016U3A-TF55		33			1 $27.3 10 $27.3 100 $26.25 1000 $26.25 10000 $26.25	Buy Now

K6F8016U3 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
K6F8016U3A-TB55 Abstract: K6F8016U3A-RB55 K6F8016u3a Text: K6F8016U3A Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft December 11, 2000 Preliminary 1.0 Finalize - Isb1 change : 25µA to 15µA	Original	PDF	K6F8016U3A K6F8016U3A-TB55 K6F8016U3A-RB55
K6F8016U3M Abstract: No abstract text available Text: K6F8016U3M Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 23, 1999 Preliminary 1.0 Finalized - Errata correction - Change for tWHZ : 25 to 20ns for 70ns product.	Original	PDF	K6F8016U3M
K6F8016U3A-TF55 Abstract: K6F8016U3A Text: K6F8016U3A Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark December 11, 2000 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and	Original	PDF	K6F8016U3A K6F8016U3A-TF55
K6F8016U3 Abstract: No abstract text available Text: K6F8016U3M Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 23, 1999 Preliminary 1.0 Finalized - Errata correction - Change for tWHZ : 25 to 20ns for 70ns product.	Original	PDF	K6F8016U3M K6F8016U3
RISC-Processor s3c2410 Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH	Original	PDF	BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
TSOP44 Package Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70 Text: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments	Original	PDF
CYPRESS SAMSUNG CROSS REFERENCE Abstract: TC55V400-70 toshiba 32k*8 sram TC55257DI-L-70 tbb1458b BS62LV1024-70 BS62UV1024-15 BS62UV256-15 K6F8008S2M BS62LV4005-70 Text: 7700 Irvine Center Dr. STE: 420 Irvine, CA 92618 Contact: Lena Patel email: lena@brilliancesemi.com Phone Number: 949-789-6274 Fax Number: 949-789-6277 Website: www.brilliancesemi.com SRAM CROSS REFERENCE Memory Size Operating Voltage SAMSUNG 1.2 ~ 2.4V 1.8 ~ 3.6V	Original	PDF	K6Y0808C1D BS62XV1024-25 BS62UV1024-15 BS62LV1024-70 BS62XV2000-25 BS62UV2000-15 BS62LV2000-10 BS62LV2000-70 BS62XV256-25 32Kx8 CYPRESS SAMSUNG CROSS REFERENCE TC55V400-70 toshiba 32k*8 sram TC55257DI-L-70 tbb1458b BS62LV1024-70 BS62UV1024-15 BS62UV256-15 K6F8008S2M BS62LV4005-70