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    K6X8016T3BTF55 Datasheets (1)

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    K6X8016T3B-TF55 Samsung Electronics 512K x 16 bit Low Power Full CMOS Static RAM Original PDF

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    K6X8016T3B-F

    Abstract: K6X8016T3B-TQ70 K6X8016T3B K6X8016T3B-Q K6X8016T3B-TF55
    Text: Preliminary CMOS SRAM K6X8016T3B Family Document Title 512Kx16 bit Low Power Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 31, 2002 Preliminary 0.1 Revised - Deleted 44-TSOP2-400R package type. December 11, 2002


    Original     		K6X8016T3B 512Kx16 44-TSOP2-400R K6X8016T3B-F K6X8016T3B-TQ70 K6X8016T3B-Q K6X8016T3B-TF55 PDF

    K6X8016T3B-UF55

    Abstract: K6X8016T3B-UF70 K6X8016T3B K6X8016T3B-F K6X8016T3B-Q K6X8016T3B-TF55
    Text: K6X8016T3B Family CMOS SRAM 512Kx16 bit Low Power Full CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology: Full CMOS • Organization: 512K x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V Min • Three state outputs


    Original     		K6X8016T3B 512Kx16 44-TSOP2-400F K6X8016T3B-F K6X8016T3B-Q K6X8016T3B-UF55 K6X8016T3B-UF70 K6X8016T3B-F K6X8016T3B-Q K6X8016T3B-TF55 PDF

    K6X8016T3B-UF55

    Abstract: K6X8016T3B K6X8016T3B-F K6X8016T3B-Q k6x8016t3btf55
    Text: K6X8016T3B Family CMOS SRAM Document Title 512Kx16 bit Low Power Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 31, 2002 Preliminary 0.1 Revised - Deleted 44-TSOP2-400R package type. December 11, 2002


    Original     		K6X8016T3B 512Kx16 44-TSOP2-400R K6X8016T3B-UF55 K6X8016T3B-F K6X8016T3B-Q k6x8016t3btf55 PDF

    K6X8016T3B

    Abstract: K6X8016T3B-F K6X8016T3B-Q
    Text: K6X8016T3B Family CMOS SRAM Document Title 512Kx16 bit Low Power Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 31, 2002 Preliminary 0.1 Revised - Deleted 44-TSOP2-400R package type. December 11, 2002


    Original     		K6X8016T3B 512Kx16 44-TSOP2-400R K6X8016T3B-F K6X8016T3B-Q PDF