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    K70A06J

    Abstract: TK70A06J1
    Text: K70A06J1 東芝電界効果トランジスタ シリコンNチャネルMOS形 超高速U-MOSⅢ K70A06J1 スイッチングレギュレーター用 単位: mm z ゲート入力電荷量が小さい。: Qg = 87 nC (標準) z オン抵抗が低い。 : RDS (ON) = 5.1 mΩ (標準)


    Original     		TK70A06J1 SC-67 2-10U1B K70A06J TK70A06J1 PDF

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    Abstract: No abstract text available
    Text: K70A06J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K70A06J1 Switching Regulator Application Unit: mm • High-Speed switching • Small gate charge: Qg = 87nC (typ.) • Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.)


    Original     		TK70A06J1 PDF

    TK70A06J1

    Abstract: K70A06J
    Text: K70A06J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K70A06J1 Switching Regulator Application • Unit: mm High-Speed switching • Small gate charge: Qg = 87nC (typ.) • Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.)


    Original     		TK70A06J1 TK70A06J1 K70A06J PDF