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    sec K7B803625BQI75

    256K X 36-BIT SYNCHRONOUS BURST SRAM Cache SRAM, 256KX36, 7.5ns, CMOS, PQFP100
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    ComSIT USA K7B803625BQI75 363
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    K7B803625B Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K7B803625B Samsung Electronics 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Burst SRAM Data Sheet Original PDF
    K7B803625B Samsung Electronics 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM Original PDF
    K7B803625B K7B803225B K7B801825B Samsung Electronics 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Burst SRAM Data Sheet Original PDF
    K7B803625B-QC65 Samsung Electronics 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Original PDF
    K7B803625B-QC75 Samsung Electronics 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Original PDF

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    K7B801825B

    Abstract: K7B803625B
    Text: K7B803625B K7B801825B 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft May. 18 . 2001 Preliminary 0.1 Add x32 org part and industrial temperature part


    Original     		PDF K7B803625B K7B801825B 256Kx36 512Kx18 512Kx18-Bit 119BGA 225MHz K7B801825B K7B803625B

    Untitled

    Abstract: No abstract text available
    Text: K7B803625B K7B803225B K7B801825B 256Kx36/x32 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Burst SRAM Revision History History Draft Date Remark 0.0 Initial draft May. 18 . 2001 Preliminary 0.1 Add x32 org part and industrial temperature part


    Original     		PDF K7B803625B K7B803225B K7B801825B 256Kx36/x32 512Kx18 256Kx36 256Kx32 512Kx18-Bit 119BGA repl0-TQFP-1420A

    block diagram of pentium D

    Abstract: K7B801825B K7B803225B K7B803625B
    Text: K7B803625B K7B803225B K7B801825B 256Kx36/x32 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft May. 18 . 2001 Preliminary 0.1 Add x32 org part and industrial temperature part


    Original     		PDF K7B803625B K7B803225B K7B801825B 256Kx36/x32 512Kx18 256Kx36 256Kx32 512Kx18-Bit 119BGA 225MHz block diagram of pentium D K7B801825B K7B803225B K7B803625B

    K7A803609B-Q

    Abstract: K7B801825B K7B803625B
    Text: K7B803625B K7B801825B 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft May. 18 . 2001 Preliminary 0.1 Add x32 org part and industrial temperature part


    Original     		PDF K7B803625B K7B801825B 256Kx36 512Kx18 512Kx18-Bit 119BGA 225MHz K7A803609B-Q K7B801825B K7B803625B

    K7B801825B

    Abstract: K7B803225B K7B803625B SVCH
    Text: K7B803625B K7B803225B K7B801825B PRELIMINARY 256Kx36 & 256Kx32 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 0.1 History Draft Date Remark Initial draft Add x32 org part and industrial temperature part


    Original     		PDF K7B803625B K7B803225B K7B801825B 256Kx36 256Kx32 512Kx18 512Kx18-Bit K7B801825B K7B803225B K7B803625B SVCH

    K7B801825B

    Abstract: K7B803625B
    Text: K7B803625B K7B801825B PRELIMINARY 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 History Draft Date Remark Initial draft May . 18 . 2001 Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the


    Original     		PDF K7B803625B K7B801825B 256Kx36 512Kx18 512Kx18-Bit K7B801825B K7B803625B

    K7B803625B-p

    Abstract: K7B801825B K7B803625B
    Text: K7B803625B K7B801825B 256Kx36 & 512Kx18 Synchronous SRAM 8Mb Sync. Burst SRAM Specification 100 TQFP with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K7B803625B K7B801825B 256Kx36 512Kx18 100-TQFP-1420A K7B803625B-p K7B801825B K7B803625B

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    Untitled

    Abstract: No abstract text available
    Text: K7A803609B K7A803209B K7A801809B 256Kx36/x32 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 Initial draft May. 18 . 2001 Preliminary 0.1 1. Delete pass- through


    Original     		PDF K7A803609B K7A803209B K7A801809B 256Kx36/x32 512Kx18 256Kx36 256Kx32 512Kx18-Bit 119BGA 100-TQFP-1420A

    Untitled

    Abstract: No abstract text available
    Text: K7A803601B K7A803201B K7A801801B 256Kx36/x32 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 Initial draft May. 18 . 2001 Preliminary 0.1 1. Delete pass- through


    Original     		PDF K7A803601B K7A803201B K7A801801B 256Kx36/x32 512Kx18 256Kx36 256Kx32 512Kx18-Bit

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    K7A801808B

    Abstract: K7A803208B K7A803608B
    Text: K7A803608B K7A803208B K7A801808B 256Kx36/x32 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft May. 18 . 2001 Preliminary 0.1 1. Delete pass- through


    Original     		PDF K7A803608B K7A803208B K7A801808B 256Kx36/x32 512Kx18 256Kx36 256Kx32 512Kx18-Bit 225MHz K7A801808B K7A803208B K7A803608B

    Untitled

    Abstract: No abstract text available
    Text: K7A803608B K7A803208B K7A801808B 256Kx36/x32 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 Initial draft May. 18 . 2001 Preliminary 0.1 1. Delete pass- through


    Original     		PDF K7A803608B K7A803208B K7A801808B 256Kx36/x32 512Kx18 256Kx36 256Kx32 512Kx18-Bit

    K7A803609B-PC25

    Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
    Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15


    Original     		PDF K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20

    Untitled

    Abstract: No abstract text available
    Text: K7A803600B K7A803200B K7A801800B 256Kx36/x32 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 Initial draft May. 18 . 2001 Preliminary 0.1 1. Delete pass- through


    Original     		PDF K7A803600B K7A803200B K7A801800B 256Kx36/x32 512Kx18 256Kx36 256Kx32 512Kx18-Bit 119BGA 100-TQFP-1420A

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    Untitled

    Abstract: No abstract text available
    Text: K7A803609B K7A803209B K7A801809B 256Kx36/x32 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 Initial draft May. 18 . 2001 Preliminary 0.1 1. Delete pass- through


    Original     		PDF K7A803609B K7A803209B K7A801809B 256Kx36/x32 512Kx18 256Kx36 256Kx32 512Kx18-Bit 119BGA 225MHz

    K7A801801B

    Abstract: K7A803201B K7A803601B
    Text: K7A803601B K7A803201B K7A801801B 256Kx36/x32 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft May. 18 . 2001 Preliminary 0.1 1. Delete pass- through


    Original     		PDF K7A803601B K7A803201B K7A801801B 256Kx36/x32 512Kx18 256Kx36 256Kx32 512Kx18-Bit 225MHz K7A801801B K7A803201B K7A803601B

    K7A801800B

    Abstract: K7A803600B
    Text: K7A803600B K7A801800B 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft May. 18 . 2001 Preliminary 0.1 1. Delete pass- through June. 26. 2001


    Original     		PDF K7A803600B K7A801800B 256Kx36 512Kx18 512Kx18-Bit 119BGA 225MHz K7A801800B K7A803600B

    K7A801809B

    Abstract: K7A803609B
    Text: K7A803609B K7A801809B 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft May. 18 . 2001 Preliminary 0.1 1. Delete pass- through June. 26. 2001


    Original     		PDF K7A803609B K7A801809B 256Kx36 512Kx18 512Kx18-Bit 119BGA 225MHz K7A801809B K7A803609B

    um61256

    Abstract: hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16
    Text: Cross Reference Your Memory Provider Part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B AM29F010


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B PD4504161 um61256 hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G

    um61256

    Abstract: PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A HY514264 M5M418 hynix hy57v281620
    Text: Cross Reference Your Memory Supplier part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B A29F002 um61256 PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A HY514264 M5M418 hynix hy57v281620

    K7A803600B-HC16

    Abstract: K7A801800B K7A803200B K7A803600B 256k x 18 119bga K7A801800B-HC16
    Text: K7A803600B K7A803200B K7A801800B 256Kx36/x32 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft May. 18 . 2001 Preliminary 0.1 1. Delete pass- through


    Original     		PDF K7A803600B K7A803200B K7A801800B 256Kx36/x32 512Kx18 256Kx36 256Kx32 512Kx18-Bit 119BGA 225MHz K7A803600B-HC16 K7A801800B K7A803200B K7A803600B 256k x 18 119bga K7A801800B-HC16