K7M801825B
Abstract: K7M803625B
Text: K7M803625B K7M801825B Preliminary 256Kx36 & 512Kx18 Flow-Through NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Flow Through NtRAM TM Revision History Rev. No. 0.0 History Draft Date Remark 1. Initial document. May. 18. 2001 Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
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K7M803625B
K7M801825B
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K7M801825B
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K7M801825B
Abstract: K7M803625B
Text: K7M803625B K7M801825B 256Kx36 & 512Kx18 Flow-Through NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 18. 2001 Preliminary 0.1 1. Add x32 org part and industrial temperature part
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K7M803625B
K7M801825B
256Kx36
512Kx18
512Kx18-Bit
119BGA
225MHz
K7M801825B
K7M803625B
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K7M801825B
Abstract: K7M803225B K7M803625B
Text: K7M803625B Preliminary K7M803225B 256Kx36 & 256Kx32 & 512Kx18 Flow-Through NtRAMTM K7M801825B Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial document. 1. Add x32 org part and industrial temperature part
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K7M803625B
K7M803225B
256Kx36
256Kx32
512Kx18
K7M801825B
512Kx18-Bit
K7M801825B
K7M803625B
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75TCYC
Abstract: No abstract text available
Text: K7M803625B K7M803225B K7M801825B 256Kx36/x32 & 512Kx18 Flow-Through NtRAMTM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Flow Through NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. May. 18. 2001 Preliminary 0.1 1. Add x32 org part and industrial temperature part
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K7M803625B
K7M803225B
K7M801825B
256Kx36/x32
512Kx18
256Kx36
256Kx32
512Kx18-Bit
119BGA
100-TQFP-1420A
75TCYC
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Untitled
Abstract: No abstract text available
Text: K7M803625B K7M801825B 256Kx36 & 512Kx18 Flow-Through NtRAMTM 8Mb NtRAMTM Specification 100 TQFP with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7M803625B
K7M801825B
256Kx36
512Kx18
100-TQFP-1420A
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K7M803625B-HC75
Abstract: K7M801825B K7M803225B K7M803625B
Text: K7M803625B K7M803225B K7M801825B 256Kx36/x32 & 512Kx18 Flow-Through NtRAMTM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 18. 2001 Preliminary 0.1 1. Add x32 org part and industrial temperature part
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K7M803625B
K7M803225B
K7M801825B
256Kx36/x32
512Kx18
256Kx36
256Kx32
512Kx18-Bit
119BGA
225MHz
K7M803625B-HC75
K7M801825B
K7M803225B
K7M803625B
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K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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RISC-Processor s3c2410
Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH
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BR-04-ALL-005
BR-04-ALL-004
RISC-Processor s3c2410
MR16R1624DF0-CM8
arm9 samsung s3c2440 architecture
chip 3351 dvd
sp0411n
K9W8G08U1M
sandisk micro SD Card 2GB
arm9 s3c2440
K9F1G08U0A
K6X8008C2B
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K7N801809B
Abstract: K7N803209B K7N803609B K7N801845B-QC
Text: K7N803609B K7N803209B K7N801809B 256Kx36/x32 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 18. 2001 Preliminary 0.1 1. Add x32 org part and industrial temperature part
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K7N803609B
K7N803209B
K7N801809B
256Kx36/x32
512Kx18
256Kx36
256Kx32
512Kx18-Bit
119BGA
225MHz
K7N801809B
K7N803209B
K7N803609B
K7N801845B-QC
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K7N801845B
Abstract: K7N803645B
Text: K7N803645B K7N801845B 256Kx36 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 18. 2001 Preliminary 0.1 1. Add x32 org part and industrial temperature part
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K7N803645B
K7N801845B
256Kx36
512Kx18
512Kx18-Bit
119BGA
100mA
225MHz
K7N801845B
K7N803645B
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Untitled
Abstract: No abstract text available
Text: K7N803649B K7N803249B K7N801849B 256Kx36/x32 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. May. 18. 2001 Preliminary 0.1 1. Add x32 org part and industrial temperature part
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K7N803649B
K7N803249B
K7N801849B
256Kx36/x32
512Kx18
256Kx36
256Kx32
512Kx18-Bit
119BGA
100mA
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K7N801809B
Abstract: K7N803209B K7N803609B
Text: K7N803609B K7N803209B K7N801809B Preliminary 256Kx36 & 256Kx32 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial document. 1. Add x32 org part and industrial temperature part
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K7N803609B
K7N803209B
K7N801809B
256Kx36
256Kx32
512Kx18
512Kx18-Bit
K7N801809B
K7N803209B
K7N803609B
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K7A803609B-PC25
Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15
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K6R1016V1C-FC10
K6R1016V1C-FC12
K6R1016V1C-FC15
K6R1016V1C-FC20
K6R1016V1C-JC10
K6R1016V1C-JC12
K6R1016V1C-JC15
K6R1016V1C-JC20
K6R1016V1C-TC10
K6R1016V1C-TC12
K7A803609B-PC25
K7A403600B-PC16
K7I161882B-EC16
K6R4016V1D-TC08
K7A403600M-QC16
K7I161882B-EC30
K6R4008V1C-JC12
K6R4016V1D-UC10
K6R1008V1C-JC10
K7R643682M-FC20
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Untitled
Abstract: No abstract text available
Text: K7N803645B K7N803245B K7N801845B 256Kx36/x32 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. May. 18. 2001 Preliminary 0.1 1. Add x32 org part and industrial temperature part
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K7N803645B
K7N803245B
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256Kx36/x32
512Kx18
256Kx36
256Kx32
512Kx18-Bit
119BGA
100mA
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K7N801845B-HC13
Abstract: K7N801801B K7N803201B K7N803601B
Text: K7N803601B K7N803201B K7N801801B 256Kx36/x32 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 18. 2001 Preliminary 0.1 1. Add x32 org part and industrial temperature part
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K7N803601B
K7N803201B
K7N801801B
256Kx36/x32
512Kx18
256Kx36
256Kx32
512Kx18-Bit
119BGA
225MHz
K7N801845B-HC13
K7N801801B
K7N803201B
K7N803601B
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K7N801849B
Abstract: K7N803649B
Text: K7N803649B K7N801849B Preliminary 256Kx36 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 History 1. Initial document. Draft Date May . 18. 2001 Remark Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
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K7N803649B
K7N801849B
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512Kx18
512Kx18-Bit
K7N801849B
K7N803649B
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K9F2G08U0B
Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM
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BR-09-ALL-001
K9F2G08U0B
K9HCG08U1M-PCB0
K9NCG08U5M-PCB0
K9F1G08U0C
K9F4G08U0B-PCB0
K9F2G08U0B-PCB0
K9F4G08U0B
K9WBG08U1M
K9F1G08U0C-PCB0
K9G4G08U0B
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K7N801801B
Abstract: K7N803601B
Text: K7N803601B K7N801801B 256Kx36 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 18. 2001 Preliminary 0.1 1. Add x32 org part and industrial temperature part
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K7N803601B
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512Kx18
512Kx18-Bit
119BGA
225MHz
K7N801801B
K7N803601B
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K7N801809B
Abstract: K7N803609B
Text: K7N803609B K7N801809B 256Kx36 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 18. 2001 Preliminary 0.1 1. Add x32 org part and industrial temperature part
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K7N803609B
K7N801809B
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512Kx18
512Kx18-Bit
119BGA
225MHz
K7N801809B
K7N803609B
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K7N801801B
Abstract: K7N803201B K7N803601B
Text: K7N803601B K7N803201B K7N801801B Preliminary 256Kx36 &256Kx32 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial document. 1. Add x32 org part and industrial temperature part
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K7N803601B
K7N803201B
K7N801801B
256Kx36
256Kx32
512Kx18
512Kx18-Bit
K7N801801B
K7N803201B
K7N803601B
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K7N803601B
Abstract: No abstract text available
Text: K7N803601B K7N803201B K7N801801B 256Kx36/x32 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. May. 18. 2001 Preliminary 0.1 1. Add x32 org part and industrial temperature part
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K7N803601B
K7N803201B
K7N801801B
256Kx36/x32
512Kx18
256Kx36
256Kx32
512Kx18-Bit
119BGA
100-TQFP-1420A
K7N803601B
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K7N801849B
Abstract: K7N803649B
Text: K7N803649B K7N801849B 256Kx36 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 18. 2001 Preliminary 0.1 1. Add x32 org part and industrial temperature part
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K7N803649B
K7N801849B
256Kx36
512Kx18
512Kx18-Bit
119BGA
100mA
225MHz
K7N801849B
K7N803649B
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K5W1G
Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION
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BR-07-ALL-001
K5W1G
KMCME0000M-B998
k9hbg08u1m
K9MCG08U5M
K5E1257ACM
MC4GE04G5APP-0XA
b998
KMCME0000M
hd161hj
K5D1G
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um61256
Abstract: PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A HY514264 M5M418 hynix hy57v281620
Text: Cross Reference Your Memory Supplier part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B
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PD4218165
PD424260
PD431000A
PD43256B
PD441000L-B
PD442000L-B
PD442012L-XB
PD444012L-B
A29F002
um61256
PM25LV040
SST25LF040B
Pm25LV016
PM25LV010A
PM25LV080
SST25LF512A
HY514264
M5M418
hynix hy57v281620
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