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Samsung Semiconductor K7N403609B-QC25000 SRAM - Sync Quad - 3.3V - 4Mbit (128K x 36) - 2.4ns - 100-Pin TQFP - Tray
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Onlinecomponents.com	K7N403609B-QC25000		510			1 $0 10 $0 100 $0 1000 $0 10000 $0	Buy Now
Samsung Semiconductor K7N403609BPI20 128K X 36-BIT PIPELINED NTRAM ZBT SRAM, 128KX36, 2.8ns, CMOS, PQFP100
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ComSIT USA	K7N403609BPI20		2,394			1 - 10 - 100 - 1000 - 10000 -	Get Quote

K7N403609B Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
K7N403609B		Samsung Electronics	128Kx36 & 128Kx32 & 256K x 18-Bit Pipelined NtRAM Data Sheet		Original	PDF
K7N403609B K7N403209B K7N401809B		Samsung Electronics	128Kx36 & 128Kx32 & 256K x 18-Bit Pipelined NtRAM Data Sheet		Original	PDF
K7N403609B-QC20		Samsung Electronics	128Kx36 & 256K x 18 Pipelined NtRAM		Original	PDF
K7N403609B-QC22		Samsung Electronics	Cache Memory, 128Kx36 & 128Kx32 & 256K x 18-Bit Pipelined NtRAM		Original	PDF
K7N403609B-QC25		Samsung Electronics	Cache Memory, 128Kx36 & 128Kx32 & 256K x 18-Bit Pipelined NtRAM		Original	PDF
K7N403609B-QI22		Samsung Electronics	Cache Memory, 128Kx36 & 128Kx32 & 256K x 18-Bit Pipelined NtRAM		Original	PDF
K7N403609B-QI25		Samsung Electronics	Cache Memory, 128Kx36 & 128Kx32 & 256K x 18-Bit Pipelined NtRAM		Original	PDF

K7N403609B Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: K7N403609B K7N403209B K7N401809B 128Kx36/x32 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary 0.1 1. Changed DC parameters	Original	K7N403609B K7N403209B K7N401809B 128Kx36/x32 256Kx18 128Kx36 128Kx32 256Kx18-Bit 470mA 400mA	PDF
zo 140ma Abstract: K7N401809B K7N403609B Text: K7N403609B K7N401809B 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary 0.1 1. Changed DC parameters Icc ; from 470mA to 400mA at -25,	Original	K7N403609B K7N401809B 128Kx36 256Kx18 256Kx18-Bit 470mA 400mA 440mA 360mA zo 140ma K7N401809B K7N403609B	PDF
K7N401809B Abstract: K7N403609B Text: K7N403609B K7N401809B 128Kx36 & 256Kx18 Pipelined NtRAMTM 4Mb NtRAMTM Specification 100 TQFP with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	K7N403609B K7N401809B 128Kx36 256Kx18 K7N401809B K7N403609B	PDF
K7M403625B-QC Abstract: K7N401809B K7N403209B K7N403609B Text: K7N403209B K7N403609B K7N401809B Preliminary 128Kx36 & 128Kx32 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary	Original	K7N403209B K7N403609B K7N401809B 128Kx36 128Kx32 256Kx18 256Kx18-Bit 470mA K7M403625B-QC K7N401809B K7N403209B K7N403609B	PDF
K7N401801B Abstract: K7N403601B Text: K7N403601B K7N401801B 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary 0.1 1. Changed DC parameters Icc ; from 350mA to 290mA at -16,	Original	K7N403601B K7N401801B 128Kx36 256Kx18 256Kx18-Bit 350mA 290mA 330mA 270mA K7N401801B K7N403601B	PDF
K8D3216UBC-pi07 Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM	Original	BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm	PDF
RISC-Processor s3c2410 Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH	Original	BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B	PDF
Untitled Abstract: No abstract text available Text: K7N403601B K7N403201B K7N401801B 128Kx36/x32 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary 0.1 1. Changed DC parameters	Original	K7N403601B K7N403201B K7N401801B 128Kx36/x32 256Kx18 128Kx36 128Kx32 256Kx18-Bit 350mA 290mA	PDF
K7M401825B Abstract: K7M403225B K7M403625B Text: K7M403225B K7M403625B Preliminary K7M401825B 128Kx36 & 128Kx32 & 256Kx18 Flow-Through NtRAMTM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary	Original	K7M403225B K7M403625B K7M401825B 128Kx36 128Kx32 256Kx18 256Kx18-Bit 300mA K7M403225B K7M403625B	PDF
K7N401801B Abstract: K7N403201B K7N403601B K7M403625 Text: K7N403601B K7N403201B K7N401801B Preliminary 128Kx36 & 128Kx32 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary	Original	K7N403601B K7N403201B K7N401801B 128Kx36 128Kx32 256Kx18 256Kx18-Bit 350mA K7N401801B K7N403201B K7N403601B K7M403625	PDF
K9F2G08U0B Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM	Original	BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B	PDF
um61256 Abstract: hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16 Text: Cross Reference Your Memory Provider Part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B AM29F010	Original	PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B PD4504161 um61256 hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16	PDF
K7M401825B Abstract: K7M403225B K7M403625B Text: K7M403625B K7M403225B K7M401825B 128Kx36/x32 & 256Kx18 Flow-Through NtRAMTM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary 0.1 1. Changed DC parameters	Original	K7M403625B K7M403225B K7M401825B 128Kx36/x32 256Kx18 128Kx36 128Kx32 256Kx18-Bit 300mA 250mA K7M401825B K7M403225B K7M403625B	PDF
K5W1G Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION	Original	BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G	PDF

K9F2G08U0C Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0 Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM	Original	BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0	PDF
K9HDG08U1A Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks	Original	BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe	PDF