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    Samsung Semiconductor K7R163684B-FC20

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    Quest Components K7R163684B-FC20 40
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    Samsung Semiconductor K7R163684B-FC200

    512K X 36 QDR SRAM, 0.45 ns, PBGA165
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    Quest Components K7R163684B-FC200 749
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    K7R163684B Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K7R163684B Samsung Electronics 512Kx36 & 1Mx18 QDR II b4 SRAM Original PDF
    K7R163684B-BC16 Samsung Electronics IC SRAM CHIP SYNC SINGLE 1.8V 16MBIT 512KX32 0.5NS 165FBGA Original PDF
    K7R163684B-BC20 Samsung Electronics IC SRAM CHIP SYNC SINGLE 1.8V 16MBIT 512KX32 0.45NS 165FBGA Original PDF
    K7R163684B-BC25 Samsung Electronics IC SRAM CHIP SYNC SINGLE 1.8V 16MBIT 512KX32 0.45NS 165FBGA Original PDF
    K7R163684B-FC16 Samsung Electronics 512Kx36 & 1Mx18 QDR II b4 SRAM Original PDF
    K7R163684B-FC20 Samsung Electronics 512Kx36 & 1Mx18 QDR II b4 SRAM Original PDF
    K7R163684B-FC25 Samsung Electronics 512Kx36 & 1Mx18 QDR II b4 SRAM Original PDF
    K7R163684B-FC30 Samsung Electronics 512Kx36 & 1Mx18 QDR II b4 SRAM Original PDF

    K7R163684B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: K7R163684B K7R161884B K7R160884B Preliminary 512Kx36 & 1Mx18 & 2Mx8 QDR TM II b4 SRAM Document Title 512Kx36-bit,1Mx18-bit, 2Mx8-bit QDR TM II b4 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Oct. 17. 2002 Advance 0.1 1. Change the Boundary scan exit order.


    Original     		PDF K7R163684B K7R161884B K7R160884B 512Kx36 1Mx18 512Kx36-bit 1Mx18-bit,

    K7R161884B

    Abstract: K7R161884B-FC25 K7R161884B-FC30 K7R163684B K7R163684B-FC16 K7R163684B-FC20 K7R163684B-FC25 K7R163684B-FC30
    Text: K7R163684B K7R161884B K7R160884B Preliminary 512Kx36 & 1Mx18 & 2Mx8 QDR TM II b4 SRAM Document Title 512Kx36-bit,1Mx18-bit, 2Mx8-bit QDR TM II b4 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Oct. 17. 2002 Advance 0.1 1. Change the Boundary scan exit order.


    Original     		PDF K7R163684B K7R161884B K7R160884B 512Kx36 1Mx18 512Kx36-bit 1Mx18-bit, K7R161884B K7R161884B-FC25 K7R161884B-FC30 K7R163684B K7R163684B-FC16 K7R163684B-FC20 K7R163684B-FC25 K7R163684B-FC30

    Untitled

    Abstract: No abstract text available
    Text: K7R163684B K7R161884B 512Kx36 & 1Mx18 QDR TM II b4 SRAM Document Title 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Oct. 17. 2002 Advance 0.1 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram.


    Original     		PDF K7R163684B K7R161884B 512Kx36 1Mx18 512Kx36-bit 1Mx18-bit 165FBGA

    K7R161884B

    Abstract: K7R161884B-FC20 K7R161884B-FC25 K7R161884B-FC30 K7R163684B K7R163684B-FC16 K7R163684B-FC20 K7R163684B-FC25 K7R163684B-FC30
    Text: K7R163684B K7R161884B 512Kx36 & 1Mx18 QDRTM II b4 SRAM Document Title 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Oct. 17. 2002 Advance 0.1 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram.


    Original     		PDF K7R163684B K7R161884B 512Kx36 1Mx18 512Kx36-bit 1Mx18-bit 165FBGA K7R161884B K7R161884B-FC20 K7R161884B-FC25 K7R161884B-FC30 K7R163684B K7R163684B-FC16 K7R163684B-FC20 K7R163684B-FC25 K7R163684B-FC30

    Untitled

    Abstract: No abstract text available
    Text: K7R163684B K7R161884B K7R160884B Preliminary 512Kx36 & 1Mx18 & 2Mx8 QDR TM II b4 SRAM Document Title 512Kx36-bit,1Mx18-bit, 2Mx8-bit QDR TM II b4 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Oct. 17. 2002 Advance 0.1 1. Change the Boundary scan exit order.


    Original     		PDF K7R163684B K7R161884B K7R160884B 512Kx36 1Mx18 512Kx36-bit 1Mx18-bit, 165FBGA

    Untitled

    Abstract: No abstract text available
    Text: K7R163684B K7R161884B K7R160884B Advance 512Kx36 & 1Mx18 & 2Mx8 QDRTM II b4 SRAM Document Title 512Kx36-bit,1Mx18-bit, 2Mx8-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 History Draft Date Remark 1. Initial document. Oct. 17. 2002 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the


    Original     		PDF K7R163684B K7R161884B K7R160884B 512Kx36 1Mx18 512Kx36-bit 1Mx18-bit,

    D0-35

    Abstract: K7R161884B K7R163684B
    Text: K7R163684B K7R161884B 512Kx36 & 1Mx18 QDRTM II b4 SRAM 18Mb QDRII SRAM Specification 165FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K7R163684B K7R161884B 512Kx36 1Mx18 165FBGA 11x15 D0-35 K7R161884B K7R163684B

    Untitled

    Abstract: No abstract text available
    Text: K7R163684B K7R161884B 512Kx36 & 1Mx18 QDRTM II b4 SRAM Document Title 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Oct. 17. 2002 Advance 0.1 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram.


    Original     		PDF K7R163684B K7R161884B 512Kx36 1Mx18 512Kx36-bit 1Mx18-bit 165FBGA

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    CSR 8510

    Abstract: CSR 8510 a10 CSR 8510 v4 80KSBR200 v8 doorbell wireless doorbell 813 doorbell circuit working ADS1118 2322 156 philips doorbell
    Text: Advanced Datasheet 80KSBR200 sRIO SERIAL BUFFER FLOW-CONTROL DEVICE Device Overview ◆ The IDT80KSBR200 is a high speed Serial Buffer SerB that can connect to any Serial RapidIO compliant interface. This device is built to work with any sRIO device and especially with the IDT Pre-Processing


    Original     		PDF 80KSBR200 IDT80KSBR200 IDT70K200. 72Mbit CSR 8510 CSR 8510 a10 CSR 8510 v4 80KSBR200 v8 doorbell wireless doorbell 813 doorbell circuit working ADS1118 2322 156 philips doorbell

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    Xilinx spartan xc3s400_ft256

    Abstract: XC3S400_FT256 XC3S400PQ208 XC3S250EPQ208 xc3s400TQ144 XC3S400FT256 xc3s1400afg676 XC3S700AFG484 XC3S500EPQ208 XC3S200FT256
    Text: Memory Interface Solutions User Guide UG086 v3.3 December 2, 2009 R R Xilinx is disclosing this Document and Intellectual Property (hereinafter “the Design”) to you for use in the development of designs to operate on, or interface with Xilinx FPGAs. Except as stated herein, none of the Design may be copied, reproduced, distributed, republished,


    Original     		PDF UG086 DQS10 DQS11 DQS12 DQS13 DQS14 DQS15 DQS16 DQS17 Xilinx spartan xc3s400_ft256 XC3S400_FT256 XC3S400PQ208 XC3S250EPQ208 xc3s400TQ144 XC3S400FT256 xc3s1400afg676 XC3S700AFG484 XC3S500EPQ208 XC3S200FT256

    K7A803609B-PC25

    Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
    Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15


    Original     		PDF K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0

    K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe