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Samsung Semiconductor K7R323682C-FC25
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Bristol Electronics	K7R323682C-FC25		157			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor K7R323682M-FC20000
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Samsung Semiconductor K7R323682C-FC20 1M X 36 QDR SRAM, 0.45 ns, PBGA165
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Quest Components	K7R323682C-FC20		706			1 $35.1 10 $35.1 100 $35.1 1000 $27 10000 $27	Buy Now
Others K7R323682M-FC16 INSTOCK
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Chip 1 Exchange	K7R323682M-FC16		85			1 - 10 - 100 - 1000 - 10000 -	Get Quote

K7R323682 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
K7R323682		Samsung Electronics	1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM		Original	PDF
K7R323682C		Samsung Electronics	1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM		Original	PDF
K7R323682C-FC30		Samsung Electronics	1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM		Original	PDF
K7R323682M		Samsung Electronics	1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM		Original	PDF
K7R323682M		Samsung Electronics	1Mx36-bit, 2Mx18-bit, 4Mx8-bit QDR II b2 SRAM Data Sheet		Original	PDF

K7R323682 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: K7R323682M K7R321882M K7R320982M K7R320882M 1Mx36 & 2Mx18 & 4Mx9 & 4Mx8 QDRTM II b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx9-bit, 4Mx8-bit QDR TM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June, 30 2001 Advance 0.1	Original	K7R323682M K7R321882M K7R320982M K7R320882M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit,	PDF
K7R323682M-FC20 Abstract: K7R320982M-FC20 Text: K7R323682M K7R321882M K7R320982M K7R320882M Preliminary 1Mx36 & 2Mx18 & 4Mx9 & 4Mx8 QDRTM II b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx9-bit, 4Mx8-bit QDR TM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June, 30 2001	Original	K7R323682M K7R321882M K7R320982M K7R320882M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit, K7R323682M-FC20 K7R320982M-FC20	PDF
K7R321882C Abstract: No abstract text available Text: K7R323682C K7R321882C K7R320982C Preliminary 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM 36Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.	Original	K7R323682C K7R321882C K7R320982C 1Mx36 2Mx18	PDF
K7R323682M-FC20 Abstract: K7R321882M-FC20 K7R321882M-FC16 k7r321882mfc20 K7R323682 K7R323682M-FC16 Text: K7R323682M K7R321882M K7R320882M Preliminary 1Mx36 & 2Mx18 & 4Mx8 QDRTM II b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx8-bit QDRTM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June, 30 2001 Advance 0.1 1. Pin name change from DLL to Doff.	Original	K7R323682M K7R321882M K7R320882M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit, K7R323682M-FC20 K7R321882M-FC20 K7R321882M-FC16 k7r321882mfc20 K7R323682 K7R323682M-FC16	PDF
K7R323682M-FC20 Abstract: K7R320882M K7R320982M K7R321882M K7R321882M-FC25 K7R323682M K7R323682M-FC16 K7R323682M-FC25 K7R320982M-FC20 Text: K7R323682M K7R321882M K7R320982M K7R320882M Preliminary 1Mx36 & 2Mx18 & 4Mx9 & 4Mx8 QDRTM II b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx9-bit, 4Mx8-bit QDR TM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June, 30 2001	Original	K7R323682M K7R321882M K7R320982M K7R320882M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit, -FC25 K7R323682M-FC20 K7R320882M K7R320982M K7R321882M K7R321882M-FC25 K7R323682M K7R323682M-FC16 K7R323682M-FC25 K7R320982M-FC20	PDF
K7R321882C Abstract: D0-35 K7R320982C K7R323682C Text: K7R323682C K7R321882C K7R320982C 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM 36Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.	Original	K7R323682C K7R321882C K7R320982C 1Mx36 2Mx18 K7R321882C D0-35 K7R320982C K7R323682C	PDF
4MX9 Abstract: No abstract text available Text: K7R323682M K7R321882M K7R320982M K7R320882M Preliminary 1Mx36 & 2Mx18 & 4Mx9 & 4Mx8 QDRTM II b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx9-bit, 4Mx8-bit QDRTM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June, 30 2001	Original	K7R323682M K7R321882M K7R320982M K7R320882M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit, -FC25 4MX9	PDF
K7R320982M-FC20 Abstract: K7R323682M-FC20 K7R320982M K7R321882M K7R321882M-FC16 K7R321882M-FC20 K7R323682M K7R323682M-FC16 4MX9 Text: K7R323682M K7R321882M K7R320982M 1Mx36 & 2Mx18 & 4Mx9 QDR TM II b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx9-bit QDRTM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June, 30 2001 Advance 0.1 1. 2. 3. 4. 5. 6. Dec. 5 2001	Original	K7R323682M K7R321882M K7R320982M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit, -FC25 K7R320982M-FC20 K7R323682M-FC20 K7R320982M K7R321882M K7R321882M-FC16 K7R321882M-FC20 K7R323682M K7R323682M-FC16 4MX9	PDF
Untitled Abstract: No abstract text available Text: K7R323682C K7R321882C K7R320982C Preliminary 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM 36Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.	Original	K7R323682C K7R321882C K7R320982C 1Mx36 2Mx18	PDF
K8D3216UBC-pi07 Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM	Original	BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm	PDF
RISC-Processor s3c2410 Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH	Original	BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B	PDF
Xilinx spartan xc3s400_ft256 Abstract: XC3S400_FT256 XC3S400PQ208 XC3S250EPQ208 xc3s400TQ144 XC3S400FT256 xc3s1400afg676 XC3S700AFG484 XC3S500EPQ208 XC3S200FT256 Text: Memory Interface Solutions User Guide UG086 v3.3 December 2, 2009 R R Xilinx is disclosing this Document and Intellectual Property (hereinafter “the Design”) to you for use in the development of designs to operate on, or interface with Xilinx FPGAs. Except as stated herein, none of the Design may be copied, reproduced, distributed, republished,	Original	UG086 DQS10 DQS11 DQS12 DQS13 DQS14 DQS15 DQS16 DQS17 Xilinx spartan xc3s400_ft256 XC3S400_FT256 XC3S400PQ208 XC3S250EPQ208 xc3s400TQ144 XC3S400FT256 xc3s1400afg676 XC3S700AFG484 XC3S500EPQ208 XC3S200FT256	PDF
K7A803609B-PC25 Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20 Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15	Original	K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20	PDF
K9F2G08U0B Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM	Original	BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B	PDF

K5W1G Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION	Original	BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G	PDF
K9F2G08U0C Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0 Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM	Original	BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0	PDF
K9HDG08U1A Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks	Original	BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe	PDF