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    samsung 2GB X16 Nand flash

    Abstract: SAMSUNG 4gb NAND Flash Qualification Report K9F1G16Q0M-YCB0 samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability
    Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue


    Original     		PDF K9F1G08Q0M-YCB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G08U0M-VCB0 samsung 2GB X16 Nand flash SAMSUNG 4gb NAND Flash Qualification Report samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability

    SAMSUNG 4gb NAND Flash Qualification Report

    Abstract: No abstract text available
    Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue


    Original     		PDF K9F1G08Q0M-YCB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G08U0M-VCB0 SAMSUNG 4gb NAND Flash Qualification Report

    K9F1G08D0M

    Abstract: K9F1G08U0M K9F1G08Q0M K9F1G08Q0M-PCB0 K9F1G08U0M-FCB0 K9F1G08U0M-PCB0 K9F1G16D0M K9F1G16Q0M K9F1G16U0M K9F1G16U0M-PCB0
    Text: K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue July. 5. 2001 Advance 0.1 1. Iol R/B of 1.8V is changed.


    Original     		PDF K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M K9F1G08Q0M-PCB0 K9F1G08U0M-FCB0 K9F1G08U0M-PCB0 K9F1G16D0M K9F1G16Q0M K9F1G16U0M K9F1G16U0M-PCB0

    Untitled

    Abstract: No abstract text available
    Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue


    Original     		PDF K9F1G08Q0M-YCB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G08U0M-VCB0

    SAMSUNG NAND Flash Qualification Report

    Abstract: SAMSUNG 4gb NAND Flash Qualification Report
    Text: San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel. 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 ELECTRONICS March. 2003 1Gb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table


    Original     		PDF K9F1G08Q0M-YCB0/YIB0, K9F1G16Q0M-YCB0/YIB0 K9K2G08Q0M-YCB0/YIB0, K9K2G16Q0M-YCB0/YIB0 SAMSUNG NAND Flash Qualification Report SAMSUNG 4gb NAND Flash Qualification Report

    SAMSUNG 4gb NAND Flash Qualification Report

    Abstract: No abstract text available
    Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History History Draft Date Remark 0.0 1. Initial issue July. 5. 2001


    Original     		PDF K9F1G08Q0M-YCB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G08U0M-VCB0 SAMSUNG 4gb NAND Flash Qualification Report

    K9F1G08D0M

    Abstract: K9F1G08 K9F1G08Q0M K9F1G08Q0M-PCB0 K9F1G08U0M K9F1G08U0M-FCB0 K9F1G08U0M-PCB0 K9F1G16D0M K9F1G16Q0M K9F1G16U0M
    Text: K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue July. 5. 2001 Advance 0.1 1. Iol R/B of 1.8V is changed.


    Original     		PDF K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M K9F1G08 K9F1G08Q0M-PCB0 K9F1G08U0M-FCB0 K9F1G08U0M-PCB0 K9F1G16D0M K9F1G16Q0M K9F1G16U0M

    K9F1G08U0M-YCB0

    Abstract: K9F1G08Q0M-YCB0 Flash Memory SAMSUNG K9F1G08U0M-Y K9F1G08U0M-FCB0 K9F1G08U0M-VCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G16X0M K9F1G08X0M
    Text: San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel. 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 ELECTRONICS March. 2003 1Gb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table


    Original     		PDF K9F1G08Q0M-YCB0/YIB0, K9F1G16Q0M-YCB0/YIB0 K9K2G08Q0M-YCB0/YIB0, K9K2G16Q0M-YCB0/YIB0 K9F1G08U0M-YCB0 K9F1G08Q0M-YCB0 Flash Memory SAMSUNG K9F1G08U0M-Y K9F1G08U0M-FCB0 K9F1G08U0M-VCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G16X0M K9F1G08X0M

    K9F1G08U0

    Abstract: K9F1G08U0M-FCB0 K9F1G08Q0M-Y K9F1G08 K9F1G08X0M K9F1G08U0M-Y 27X16 K9F1G08Q0M-PCB0 K9F1G08U0M-PCB0 K9F1G08U
    Text: K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue July. 5. 2001 Advance 0.1 1. Iol R/B of 1.8V is changed.


    Original     		PDF K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M K9F1G08U0 K9F1G08U0M-FCB0 K9F1G08Q0M-Y K9F1G08 K9F1G08X0M K9F1G08U0M-Y 27X16 K9F1G08Q0M-PCB0 K9F1G08U0M-PCB0 K9F1G08U

    SAMSUNG 4gb NAND Flash Qualification Report

    Abstract: samsung 2GB X16 Nand flash samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report LA14
    Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue


    Original     		PDF K9F1G08Q0M-YCB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G08U0M-VCB0 SAMSUNG 4gb NAND Flash Qualification Report samsung 2GB X16 Nand flash samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report LA14

    Untitled

    Abstract: No abstract text available
    Text: K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue July. 5. 2001 Advance 0.1 1. Iol R/B of 1.8V is changed.


    Original     		PDF K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M