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    Samsung Semiconductor K9F4008W0ATCB0

    Electronic Component
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    ComSIT USA K9F4008W0ATCB0 256
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    Samsung Electronics Co. Ltd K9F4008W0A-TCB0

    512K x 8 bit NAND Flash Memory
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics K9F4008W0A-TCB0 9,207
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    • 100 $0.6866
    • 1000 $0.4578
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    K9F4008W0ATCB0 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K9F4008W0A-TCB0 Samsung Electronics 512K x 8 bit NAND Flash Memory Original PDF
    K9F4008W0A-TCB0 Samsung Electronics 512K x 8 bit NAND Flash Memory Original PDF

    K9F4008W0ATCB0 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    400F

    Abstract: K9F4008W0A K9F4008W0A-TCB0 K9F4008W0A-TIB0 KM29W040AIT KM29W040AT k9f4008w0atcb0
    Text: K9F4008W0A-TCB0, K9F4008W0A-TIB0 FLASH MEMORY Document Title 512K x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Preliminary Initial issue. April 10th 1998 1.0 1. Changed Operating Voltage 2.7V ~ 5.5V → 3.0V ~ 5.5V July 14th 1998


    Original     		K9F4008W0A-TCB0, K9F4008W0A-TIB0 KM29W040AT K9F4008W0A-TCB0 KM29W040AIT 400F K9F4008W0A K9F4008W0A-TCB0 K9F4008W0A-TIB0 k9f4008w0atcb0 PDF

    K9F4008W0A-TCB0

    Abstract: No abstract text available
    Text: K9F4008W0A-TCB0, K9F4008W0A-TIB0 FLASH MEMORY Document Title 512K x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 1 Changed Operating Voltage 2.7V ~ 5.5V → 3.0V ~ 5.5V


    Original     		K9F4008W0A-TCB0, K9F4008W0A-TIB0 KM29W040AT K9F4008W0A-TCB0 KM29W040AIT PDF

    400F

    Abstract: K9F4008W0A K9F4008W0A-TCB0 K9F4008W0A-TIB0 KM29W040AIT KM29W040AT SAMSUNG NAND Flash Qualification Report
    Text: K9F4008W0A-TCB0, K9F4008W0A-TIB0 FLASH MEMORY Document Title 512K x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Preliminary Initial issue. April 10th 1998 1.0 1. Changed Operating Voltage 2.7V ~ 5.5V → 3.0V ~ 5.5V July 14th 1998


    Original     		K9F4008W0A-TCB0, K9F4008W0A-TIB0 KM29W040AT K9F4008W0A-TCB0 KM29W040AIT 400F K9F4008W0A K9F4008W0A-TCB0 K9F4008W0A-TIB0 SAMSUNG NAND Flash Qualification Report PDF

    400F

    Abstract: K9F4008W0A K9F4008W0A-TCB0 K9F4008W0A-TIB0 KM29W040AIT KM29W040AT
    Text: K9F4008W0A-TCB0, K9F4008W0A-TIB0 FLASH MEMORY Document Title 512K x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 1. Changed Operating Voltage 2.7V ~ 5.5V → 3.0V ~ 5.5V


    Original     		K9F4008W0A-TCB0, K9F4008W0A-TIB0 KM29W040AT K9F4008W0A-TCB0 KM29W040AIT 400F K9F4008W0A K9F4008W0A-TCB0 K9F4008W0A-TIB0 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY K9F4008W0A Document Title 512K x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Preliminary Initial issue. April 10th 1998 1.0 1. Changed Operating Voltage 2.7V ~ 5.5V → 3.0V ~ 5.5V July 14th 1998 1.1 Data Sheet 1999


    Original     		K9F4008W0A KM29W040AT K9F4008W0A-TCB0 KM29W040AIT K9F4008W0A-TIB0 PDF

    Untitled

    Abstract: No abstract text available
    Text: K9F4008W0A-TCB0, K9F4008W0A-TIB0 FLASH MEMORY Document Title 512K x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Preliminary Initial issue. April 10th 1998 1.0 1. Changed Operating Voltage 2.7V ~ 5.5V → 3.0V ~ 5.5V July 14th 1998


    Original     		K9F4008W0A-TCB0, K9F4008W0A-TIB0 KM29W040AT K9F4008W0A-TCB0 KM29W040AIT K9F4008W0A-TIB0 50own PDF