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Text: FLASH MEMORY K9K2G08U0A Document Title 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue May. 31. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
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Text: Preliminary FLASH MEMORY K9K2G08U0A Document Title 256M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue May. 31. 2004 Advance 0.1 1. Technical note is changed 2. Notes of AC timing characteristics are added
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Abstract: K9K2G08U0A-VIB0 48-PIN K9K2G08U0A
Text: Preliminary FLASH MEMORY K9K2G08U0A Document Title 256M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue May. 31. 2004 Advance 0.1 1. Technical note is changed 2. Notes of AC timing characteristics are added
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Text: K9K2G08U0A K9K2G08R0A FLASH MEMORY K9K2G08X0A INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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Abstract: K9F1G08 K9F1G08X0A K9K2G08R0A
Text: K9K2G08U0A K9K2G08R0A FLASH MEMORY K9K2G08X0A INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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Text: FLASH MEMORY K9K2G08U0A Document Title 256M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue May. 31. 2004 Advance 0.1 1. Technical note is changed 2. Notes of AC timing characteristics are added 3. The description of Copy-back program is changed
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MT29F4G08AB
Abstract: MT29F4G08ABC MT29F4G08 IMX27ads xldr i.mx27 K9F1G08 K9F1G08U0A K9F4G08U MT29F4G
Text: Freescale Semiconductor Application Note Document Number: AN4139 Rev. 0, 06/2010 Multi-NAND Disks Implementation Guide by Multimedia Applications Division Freescale Semiconductor, Inc. Austin, TX 1 Introduction Both the Flash Abstraction Layer FAL and Flash Media
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hy27ug082g2m
Abstract: hy27ub082g4m hynix nand flash 128mb hynix nand hynix nand flash hy27uh084g2m hynix nand 512M th58nvg st nand flash application note TH58NVG2S3BFT00
Text: eKF5280 USB2.0 Flash Controller Product Specification DOC. VERSION 1.0 ELAN MICROELECTRONICS CORP. February 2006 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation ELAN and ELAN logo
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hynix nand flash 128mb
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K9HCG08U5M
Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
Text: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs
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