andrew 4 port
Abstract: No abstract text available
Text: P r o d u c t A n n o u n c e m NEW Ka-Band 5.6 Meter Dual Reflector Earth Station Antenna The new 5.6 meter Ka-Band Earth Station Antenna ESA from Andrew is a second-generation antenna with superior performance and pointing accuracy. Now communications system integrators and designers can
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153rd
10444B
andrew 4 port
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WR284* ISOLATOR
Abstract: MS3116E-10-6S WR340 flange dimensions
Text: Back to Amplifier Home Page AMF SATCOM AMPLIFIERS Introduction S-Band C-Band X-Band Ku-Band Ka-Band 40 – 60 GHz Low Noise Outline Drawings 100 Davids Drive • Hauppauge, NY 11788 • 631-436-7400 • Fax: 631-436-7430 • www.miteq.com TABLE OF CONTENTS
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2002/96/EC
2002/96/EC
C-39B
WR284* ISOLATOR
MS3116E-10-6S
WR340 flange dimensions
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Untitled
Abstract: No abstract text available
Text: AL P H A IN»/ S E M I C O N D U C T O R 33E D • OSfiSMHB Q D 0 1 0 2 1 D ■ ALP Ka-Band AA035L1-00 Monolithic LNA Features Description ■ ■ ■ ■ ■ Alpha’s AA035L1-00 is a Ka-band monolithic LNA chip that features an 0.25 x 200 micron MBE grown MESFET device. The gates are E-beam
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AA035L1-00
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FMM5709X
Abstract: ka band lna FMM5709 ED-4701 ka band mmic ka band lna satellite
Text: FMM5709X K / Ka Band Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 2.5dB Typ. @ f=30GHz ・High Associated Gain : Gas = 23dB ( Typ.) @f=30GHz ・Broad Band : 17.5 ~ 32GHz ・High Output Power : P1dB = 12.5dBm ( Typ. ) @f=30GHz ・Impedance Matched Zin/Zout = 50Ω
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FMM5709X
30GHz
32GHz
FMM5709X
RECOMMEN504888
ka band lna
FMM5709
ED-4701
ka band mmic
ka band lna satellite
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ro4003
Abstract: ka band lna
Text: FMM5709VZ K / Ka Band Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 3.5dB Typ. @ f=26GHz ・High Associated Gain : Gas = 21dB (Typ.) @f=26GHz ・Broad Band : 17.5~32GHz ・High Output Power : P1dB = 12dBm (Typ.) @f=26GHz ・Ball Grid Array SMT Package (VZ)
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FMM5709VZ
26GHz
32GHz
12dBm
FMM5709VZ
ro4003
ka band lna
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ka band lna
Abstract: FMM5709 FMM5709VZ ED-4701 RO4003 ka band mmic 26GHz LNA
Text: FMM5709VZ K / Ka Band Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 3.5dB Typ. @ f=26GHz ・High Associated Gain : Gas = 21dB (Typ.) @f=26GHz ・Broad Band : 17.5~32GHz ・High Output Power : P1dB = 12dBm (Typ.) @f=26GHz ・Ball Grid Array SMT Package (VZ)
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FMM5709VZ
26GHz
32GHz
12dBm
FMM5709VZ
ka band lna
FMM5709
ED-4701
RO4003
ka band mmic
26GHz LNA
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Untitled
Abstract: No abstract text available
Text: FMM5709X K / Ka Band Low Noise Amplifier MMIC FEATURES Low Noise Figure : NF = 2.5dB Typ. @ f=30GHz High Associated Gain : Gas = 23dB ( Typ.) @f=30GHz Broad Band : 17.5 ~ 32GHz High Output Power : P1dB = 12.5dBm ( Typ. ) @f=30GHz Impedance Matched Zin/Zout = 50Ω
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FMM5709X
30GHz
32GHz
FMM5709X
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Untitled
Abstract: No abstract text available
Text: FMM5703VZ K / Ka Band Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 2.5dB typ. @ f=32GHz ・High Associated Gain : Gas = 16dB (typ.) @f=32GHz ・Broad Band : 24~32GHz ・High Output Power : P1dB = 8dBm ( Typ. ) @f=32GHz ・Ball Grid Array SMT Package(VZ-pkg)
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FMM5703VZ
32GHz
FMM5703VZ
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ka band lna
Abstract: FMM5703VZ ED-4701 RO4003 ka band
Text: FMM5703VZ K / Ka Band Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 2.5dB typ. @ f=32GHz ・High Associated Gain : Gas = 16dB (typ.) @f=32GHz ・Broad Band : 24~32GHz ・High Output Power : P1dB = 8dBm ( Typ. ) @f=32GHz ・Ball Grid Array SMT Package(VZ-pkg)
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FMM5703VZ
32GHz
FMM5703VZ
ka band lna
ED-4701
RO4003
ka band
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FMM5709VZ
Abstract: ED-4701 RO4003 ka band lna
Text: FMM5709VZ K / Ka Band Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 3.5dB Typ. @ f=26GHz ・High Associated Gain : Gas = 21dB ( Typ.) @f=26GHz ・Broad Band : 17.5~32GHz ・High Output Power : P1dB = 12dBm ( Typ. ) @f=26GHz ・Ball Grid Array SMT Package(VZ-pkg)
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FMM5709VZ
26GHz
32GHz
12dBm
FMM5709VZ
ED-4701
RO4003
ka band lna
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FMM5703VZ
Abstract: ED-4701 RO4003
Text: FMM5703VZ Preliminary K / Ka Band Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 2.5dB typ. @ f=32GHz ・High Associated Gain : Gas = 16dB (typ.) @f=32GHz ・Broad Band : 24~32GHz ・High Output Power : P1dB = 8dBm ( Typ. ) @f=32GHz ・Ball Grid Array SMT Package(VZ-pkg)
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FMM5703VZ
32GHz
FMM5703VZ
ED-4701
RO4003
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Ka-band
Abstract: ka band lna MGFC5107 MITSUBISHI CAPACITOR cb amplifier
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5107 Notice : This is not a final specification Some parametric limits are subject to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5107 is a GaAs MMIC chip especially designed for 21.0 ~ 24.0 GHz band
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MGFC5107
MGFC5107
Ka-band
ka band lna
MITSUBISHI CAPACITOR
cb amplifier
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LNA ka-band
Abstract: MGFC5109
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5109 Notice : This is not a final specification Some parametric limits are subject to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5109 is a GaAs MMIC chip especially designed for 27.0 ~ 30.0 GHz band
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MGFC5109
MGFC5109
LNA ka-band
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ka-band amplifier
Abstract: MITSUBISHI CAPACITOR MGFC5108 vD1A cb amplifier LNA ka-band
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5108 Notice : This is not a final specification Some parametric limits are subject to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5108 is a GaAs MMIC chip especially designed for 24.0 ~ 27.0 GHz band
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MGFC5108
MGFC5108
ka-band amplifier
MITSUBISHI CAPACITOR
vD1A
cb amplifier
LNA ka-band
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LNA ka-band
Abstract: No abstract text available
Text: Ka-band High Linearity High Power Amplifier Module FEATURES • Broad band 27 - 30 GHz • Usable to 31 GHz and beyond • P1dB at 37 dBm typ., and 36 dBm min. • High Gain > 20 dB with good flatness • Very good linearity • Hermetic sealed for best reliablity
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PA-M/B-270310-06-20
LNA ka-band
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Untitled
Abstract: No abstract text available
Text: Advance Product Information January 19,2001 Ka Band Wideband LNA/Driver TGA1319C Key Features and Performance • • • • • • Chip Dimensions 2.179 mm x .847 mm 0.15um pHEMT Technology 16-30 GHz Frequency Range 2.25 dB Nominal Noise Figure midband
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ka band lna
Abstract: 019 triquint TGA1319C
Text: Advance Product Information August 29, 2000 Ka Band Wideband LNA/Driver TGA1319C Key Features and Performance • • • • • • Chip Dimensions 2.169 mm x .904 mm 0.15um pHEMT Technology 16-30 GHz Frequency Range 2.25 dB Nominal Noise Figure midband
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TGA1319C
0007-inch
ka band lna
019 triquint
TGA1319C
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TGA1319C-EPU
Abstract: No abstract text available
Text: Advance Product Information November 6, 2001 Ka Band Wideband LNA/Driver TGA1319C-EPU Key Features and Performance • • • • • • Chip Dimensions 2.179 mm x .847 mm 0.15um pHEMT Technology 16-30 GHz Frequency Range 2.25 dB Nominal Noise Figure midband
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0007-inch
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antenna ku
Abstract: ka-band rain andrew 4.9 Meter ESA
Text: K 5.6-Meter Ku-, K- or Ka-Band Features: High Gain, Excellent Pattern Characteristics Advanced Gregorian Optics Self-Aligning Main Reflector— No Field Alignment Deep Equipment Enclosure 3-Year Warranty on All Structural Components Compliances: APSTAR ASTRA
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TGA1319C-EPU
Abstract: ka band lna
Text: Advance Product Information June 14, 2001 Ka Band Wideband LNA/Driver TGA1319C-EPU Key Features and Performance • • • • • • Chip Dimensions 2.179 mm x .847 mm 0.15um pHEMT Technology 16-30 GHz Frequency Range 2.25 dB Nominal Noise Figure midband
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TGA1319C-EPU
0007-inch
TGA1319C-EPU
ka band lna
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D-327B
Abstract: FCI Clipper series FCI clipper series CL1M1102 D327B ms311 breather valve waveguide WR-75 RJ 49 CONNECTORS image miteq c-22
Text: HIGH PERFOMANCE OUTDOOR BLOCK UPCONVERTERS AND BLOCK DOWNCONVERTERS HIGH PERFOMANCE OUTDOOR BLOCK UPCONVERTERS AND BLOCK DOWNCONVERTERS OUTLINE DRAWING - Ka-BAND DOWN WITH LOW NOISE OPTION 1/4-20 TAPPED THRU, #10 CLEARANCE HOLE 4 PLACES 12.61 [320.29] ±0.06 [1.52]
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RS485/RS422
10/100Base-T
WR-42
D-327B
D-327B
FCI Clipper series
FCI clipper series CL1M1102
D327B
ms311
breather valve
waveguide WR-75
RJ 49 CONNECTORS image
miteq c-22
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72km
Abstract: LNB ka band andrew 4.9 Meter ESA
Text: 5.6-Meter Ku-, K- or Ka-Band Features: ¿S J High Gain, Excellent Pattern Characteristics £2 Advanced Gregorian Optics Self-Aligning Main Reflector— No Field Alignment " to Deep Equipment Enclosure Ù O 3-Year Warranty on All Structural Components Com pliances:
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vD1A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5108 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The MGFC5108 is a GaAs MMIC chip especially designed for 24.0 ~ 27.0 GHz band
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MGFC5108
MGFC5108
100pF
vD1A
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ka-band amplifier
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5110 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The M GFC5110 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band
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MGFC5110
GFC5110
100pF
ka-band amplifier
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