335 35K
Abstract: IC 4069 Kyocera 38 kHz 455bk 500Khz resonator 4069 HEX INVERTER 338 35K tl 4069 655kHz KBR bk 06
Text: KBR -B, -BK, -F Series Ceramic Resonators kHz Band Ceramic Resonators ƒO: 190 to 1050 kHz FEATURES HOW TO ORDER 1 Optimum selection of oscillation parameters possible according to application 2) Highly reliable design with excellent environmental resistance
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270mm
335 35K
IC 4069
Kyocera 38 kHz
455bk
500Khz resonator
4069 HEX INVERTER
338 35K
tl 4069
655kHz
KBR bk 06
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LIE-301
Abstract: LIE-306 LME-301 LME-335 LME-351 LIE-502 LIE-200 LME-345 LME-300 LIE-302
Text: Page 1 Standard Products Pyroelectric and Multispectral Detectors Standard Products LIE-200 LIE-202 LIE-216 LIE-235 LIE-241 LIE-245 LIE-251 LIE-302 LIE-316 LME-300 LME-301 LME-302 LME-316 LME-335 LME-341 LME-345 LME-351 LME-500 LME-501 LME-502 LME-541 LME-551
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LIE-200
LIE-202
LIE-216
LIE-235
LIE-241
LIE-245
LIE-251
LIE-302
LIE-316
LME-300
LIE-301
LIE-306
LME-301
LME-335
LME-351
LIE-502
LIE-200
LME-345
LME-300
LIE-302
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8x8 keyboard and microcontroller interfacing
Abstract: SPRU679A OMAP OMAP5910 SPRU672 SPRU675 SPRU678 SPRU679
Text: OMAP5910 Dual-Core Processor General-Purpose Input/Output GPIO Reference Guide Literature Number: SPRU679A March 2004 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue
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OMAP5910
SPRU679A
SPRU679
8x8 keyboard and microcontroller interfacing
SPRU679A
OMAP
SPRU672
SPRU675
SPRU678
SPRU679
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IC 3130
Abstract: IC-8638 IC-3130 uPD75P117H uPD75117H uPD75P117HGC-AB8 uPD75*GK*8A8 BTM200 EEU-1421 Kyocera kbr
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD75P117H 4-BIT SINGLE CHIP MICROCOMPUTER The µPD75P117H is the same product as the µPD75117H FEATURES except that it contains one-time PROM programmable • Compatible with the µPD75117H • Contains 16K-byte mode/24K-byte mode change func-
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PD75P117H
PD75P117H
PD75117H
16K-byte
mode/24K-byte
PD75117H.
PD75P117H,
IC 3130
IC-8638
IC-3130
uPD75P117H
uPD75117H
uPD75P117HGC-AB8
uPD75*GK*8A8
BTM200
EEU-1421
Kyocera kbr
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Untitled
Abstract: No abstract text available
Text: LIE-216-# pyroelectric detector, small Description: single channel; TO18 housing; small chip size; thermal compensation; JFET; voltage mode; HOUSING: PIN ASSIGNMENT: Drain Source + - - + Gnd Case FREQUENCY RESPONSE: relative Responsivity [%] 100 10 1 1 10
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LIE-216-#
100nF
lie-216
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Untitled
Abstract: No abstract text available
Text: LIE-202-# pyroelectric detector, small Description: single channel; TO18 housing; small chip size; JFET; voltage mode; HOUSING: PIN ASSIGNMENT: Drain Source + - Gnd Case FREQUENCY RESPONSE: relative Responsivity [%] 100 10 1 1 10 Frequency [Hz] 100 Frequency [Hz]
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LIE-202-#
100nF
lie-202
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IC-3120
Abstract: IC-8502 uPD7500* instruction set domestic washing machine wiring diagram PD7228 uPD75117H uPD75116H uPD75P117H uPD75*GK*8A8 washing machine circuit diagram assembler
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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vr1 470k
Abstract: InfraTec "Pyroelectric Detector" Pyroelectric detector
Text: PRELIMINARY LIE-382-# fast pyroelectric detector Description: single channel; TO39 housing; medium chip size; OpAmp; current mode; feedback 11 MOhm; advanced transimpedance amplifier TIA for 1 Hz to 5 kHz modulation frequency range time response flat from 1 Hz up to 3 kHz
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LIE-382-#
lie-382
vr1 470k
InfraTec
"Pyroelectric Detector"
Pyroelectric detector
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vr1 470k
Abstract: uv detector circuit pyroelectric amplifier circuit InfraTec
Text: LME-353-# fast pyroelectric detector Description: single channel; TO39 housing; medium chip size; low Micro; OpAmp; current mode; feedback 5GOhm; expanded transimpedance amplifier TIA for 1Hz to 1kHz modulation frequency range time response flat from 10Hz up to 500Hz
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LME-353-#
500Hz
lme-353
vr1 470k
uv detector circuit
pyroelectric amplifier circuit
InfraTec
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LIM-262
Abstract: LMM-244 LMM-242 LIM-112 LIM-114 LIM-242 22X13 LIM-222 LIM-011 LIM142
Text: Page 1 Multi-color Products / Pyromid® Pyroelectric and Multispectral Detectors Multi-color Products / PyroMid® LIM-011 LIM-012 LIM-032 LIM-052 LIM-114 LIM-122 LIM-162 LIM-212 LIM-214 LIM-222 LIM-262 LIM-314 LMM-242 LMM-244 Germany and other countries: LASER COMPONENTS GmbH, Phone: +49 8142 2864 0, Fax: +49 8142 2864 11, info@lasercomponents.com
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LIM-011
LIM-012
LIM-032
LIM-052
LIM-054
LIM-114
LIM-122
LIM-162
LIM-212
LIM-214
LIM-262
LMM-244
LMM-242
LIM-112
LIM-242
22X13
LIM-222
LIM142
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pd446
Abstract: PD7228 uPD75108F uPD75116 uPD75116F uPD75P116 IC-2810B
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: SIEM EN S SRD00514X SRD 00515X Ge-Avalanche Photodiode with Pigtail • Designed for application in fiber-optic communication systems • Sensitive receiver for the 2nd optical window 1300 nm • High gain-bandwidth product • Suitable for bit rates up to 1.2 Gbit/s and long-haul
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SRD00514X
00515X
Q62702-Pxxxx
00514H
00515H
00E-07
00514X
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Untitled
Abstract: No abstract text available
Text: flöD D • ä23Sfe.05 QDlMbbD S H S I E 6 88D 14660 D "/ // BUZ 53 C SIEMENS A K T I E N û E S E L L S C H A F -Main ratings N-Channel a 1000 V Draln-source voltage Vaa = 2,3 A Continuous drain current Io Draln-source on-reslstance ^ D S o n ■ en
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23Sfe
C67078-A1009-A5
fl23SfciOS
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Untitled
Abstract: No abstract text available
Text: ÔÛD D • fl535b05 OOmfaflM û «SIEfi 88D 14684 D T - , 3 ¿7 ” / 3 *=* BUZ 58 A SIEMENS AKTIENGESELLSCHAF_ Main ratings N-Channei a 1000 V Drain-source voltage K>s = 3,6 A Continuous drain current h Draln-source on-resistance ^D S o n = 2,6 a
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fl535b05
C67078-A1607-A3
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75P008
Abstract: No abstract text available
Text: jW / X Y * 1^1Mid NEC Electronics Inc. fi PD7500x/75P008 General-Purpose 4-Bit Microcomputers With Multiple l/Os Description The /j PD7500x/75P008 is a family of single-chip CMOS microcomputers containing CPU, ROM, RAM, I/O ports, several timer/counters, vectored interrupts, subsystem
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PD7500x/75P008
PD7500x/75P008
83RD-6747A
/iPD7SP008)
pPD7500x/75P008
tPD75P008)
75P008
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diode 351
Abstract: SIPMOS N-channel
Text: ÛÔD D • Ô535b05 OQISGSb ô HSIEfi SIEMENS AKTIENGESELLSCHAF 7 “" 3 ^ r' / 3 Main ratings N-Channel Draln-source voltage Continuous drain current Draln-source on-reslstance Description Case Type BUZ 351 400 V 11,5 A 0,4 Q ’ OS on SIPMOS, N-channel, enhancement mode
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535b05
C67078-A3103-A2
as35b0s
A235b05
001SQ31
diode 351
SIPMOS N-channel
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BUZ14
Abstract: 681AE
Text: a&D D fl235b O S S IEM EN S 0Q 14474 & M S IE Ú A K TIE N G E S E L LS C H A F BUZ 14 Main ratings N-Channel Draln-source voltage Continuous drain current Draln-source on-resistance Description Case Type 50 V 39 A 0 ,0 4 « l'os So ^DS on SIPMOS, N-channel, enhancement mode
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fl235b
C67078-A1000-A2
23SbD5
0Q1447fl
BUZ14
681AE
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Untitled
Abstract: No abstract text available
Text: flflD D • Ô535b05 D01S03Ô 4 H S I E â SIEMENS AKTIENGESELLSCHAF 3^*/3 Main ratings BUZ 354 N-Channel = 500 V Draln-source voltage l^is = 8A Continuous drain current /d Drain-source on-resistance ^D S on = 0,8 a Description Case SIPMOS, N-channel, enhancement mode
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535b05
D01S03Ô
fl235b05
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Untitled
Abstract: No abstract text available
Text: êûD » • 6555b05 0 0 m cm a H M S I E G 88D 14942 D 3 BUZ 221 SIEMENS AKTIENGESELLSCHAF -Main ratings N-Channel Drain-source voltage Continuous drain current Draln-source on-reslstance Description Case Kds = 800 V /„ = 5 ,5 A ^DS on = 2 Î2
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6555b05
235bQS
fl235b05
Q014T47
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d880
Abstract: No abstract text available
Text: flñD D • flS3Sfc.0S O O m ^ a b <1 « S I E G 88D 14936 D . f * BUZ 220 SIEMENS AK TI EN GE SE LLS C HA F Main ratings N-Channel Draln-source voltage Continuous drain current Draln-source on-reslstance Description Case Vos ^DS Ofl 800 V 6.5 A 1.5 í l
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235b05
d880
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asssb
Abstract: No abstract text available
Text: m ÖÖD D ö23SbOS Q0147G2 b « S I E 6 8 8D 14702 □ r -3 < 7 -// SIEMENS AKTIENGESELLSCHAF _ Main ratings Draln-source voltage Continuous drain current Draln-source on-reslstance N-Channel - 400 V K>a = 5,9 A 4 ^0S «l = 1,0 f i Qo- Description
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23SbOS
Q0147G2
C67078-A1016-A2
fl23SbOS
00147Db
BUZ63
asssb
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so344
Abstract: No abstract text available
Text: ÛÛD D • fl235b05 Q ü m b 3 0 7 « S I E G 88D 14630 D 7 ”V ' 3 ^ " 7 3 BUZ 48 A SIEMENS AKTIENGESELLSCHAF_ Main ratings N-Channel Draln-source voltage VD3 ■ 500 V Continuous drain current /„ = 6,8 A Draln-source on-resistance f l Ds on> = 0,8 Q
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fl235b05
C67078-A1605-A3
C--11
23SbQ5
so344
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S0014
Abstract: C67078-A1701-A2
Text: I aaD D • ö 2 3 5 b os 88D Gomsia 14918 D r o ? m s i z G -^ / 3 BUZ 214 SIEMENS AKTIENGESELLSCHAF _ Main ratings N-Channel Draln-source voltage yBS => 500 V Continuous drain current /0 = 7A Draln-source on-reslstance /7DS on = 0,8 £2
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C67078-A1701-A2
fi23StjQS
0D14SS2
S0014
C67078-A1701-A2
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ta76431a
Abstract: TA76431AF
Text: TA76431AF TOSHIBA TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T• mA 7 K m a SILICON MONOLITHIC A ■ 3w 1 ■ Am mF ■ ADJUSTABLE PRECISION SHUNT REGULATOR FEATURES • Precision Reference Voltage : V r e f = 2.495 V ± 1% • Small Temperature Coefficient
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TA76431AF
46ppm/
ta76431a
TA76431AF
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