CERAMIC CHIP CARRIER LCC 68 socket
Abstract: INTEL 24 PIN CERAMIC DUAL-IN-LINE PACKAGE LCCs 68 socket ic 7912 64 ceramic quad flatpack CERAMIC PIN GRID ARRAY CPGA lead frame CERAMIC LEADLESS CHIP CARRIER LCC 32 socket PCB footprint cqfp 132 Single Edge Contact (S.E.C.) Cartridge: 7912 pin configuration
Text: Introduction 1.1 1 Overview Of Intel Packaging Technology As semiconductor devices become significantly more complex, electronics designers are challenged to fully harness their computing power. Today’s products can feature more than seven million transistors and device count is expected to increase to 100 million by the year 2000. With a
|
Original
|
|
PDF
|
intel packaging
Abstract: CERAMIC PIN GRID ARRAY CPGA lead frame CERAMIC CHIP CARRIER LCC 68 socket INTEL 24 PIN CERAMIC DUAL-IN-LINE PACKAGE PLCC 68 intel package dimensions 68 CERAMIC LEADLESS CHIP CARRIER LCC INTEL CDIP 40 PIN INTEL PLCC 68 dimensions tape tsop Shipping Trays QFP Shipping Trays
Text: 2 1 Introduction 1/20/97 6:22 PM CH01WIP.DOC INTEL CONFIDENTIAL until publication date 2 CHAPTER 1 INTRODUCTION 1.1. OVERVIEW OF INTEL PACKAGING TECHNOLOGY As semiconductor devices become significantly more complex, electronics designers are challenged to fully harness their computing power.Today’s products can feature more than
|
Original
|
CH01WIP
intel packaging
CERAMIC PIN GRID ARRAY CPGA lead frame
CERAMIC CHIP CARRIER LCC 68 socket
INTEL 24 PIN CERAMIC DUAL-IN-LINE PACKAGE
PLCC 68 intel package dimensions
68 CERAMIC LEADLESS CHIP CARRIER LCC
INTEL CDIP 40 PIN
INTEL PLCC 68 dimensions tape
tsop Shipping Trays
QFP Shipping Trays
|
PDF
|
Untitled
Abstract: No abstract text available
Text: OPA313 OPA2313 OPA4313 www.ti.com SBOS649C – SEPTEMBER 2012 – REVISED MARCH 2013 1-MHz, Micro-Power, Low-Noise, RRIO,1.8-V CMOS OPERATIONAL AMPLIFIER Precision Value Line Series Check for Samples: OPA313, OPA2313, OPA4313 FEATURES DESCRIPTION • • •
|
Original
|
OPA313
OPA2313
OPA4313
SBOS649C
OPA313,
OPA2313,
OPA313
|
PDF
|
AP-125
Abstract: 8XC196KC 8XC196KC chapter 5 interrupts 8XC196KC instruction set AD0-AD15 kd 116 transistor A0123-B0 8XC196KC/KD
Text: Minimum Hardware Considerations il CHAPTER 11 MINIMUM HARDWARE CONSIDERATIONS The 8XC196KC/KD has several basic requirements for operation within a system. It requires an external source of power, ground, the clock signal, and the RESET# signal. This chapter describes options for providing the basic requirements and describes other hardware
|
OCR Scan
|
8XC196KC/KD
0000H,
AP-125
8XC196KC
8XC196KC chapter 5 interrupts
8XC196KC instruction set
AD0-AD15
kd 116 transistor
A0123-B0
|
PDF
|
ztx653
Abstract: 2TX650 SE 130 ztx651 ZTX652 ztx650
Text: NPN Silicon Planar Medium Power Transistors Z T X 650 ZTX651 ZTX652 ZTX653 FEATURES • 1 .5 W p o w e r d issipation a t T amb = 2 5 ° C * • 2 V co n tinu o u s ic • Excellent gain ch a ra cte ristics to 2A • High V CE0: up to 10 0 V • L o w sa tu ra tio n voltages
|
OCR Scan
|
ZTX651
ZTX652
ZTX653
ZTX650
SE131
ztx653
2TX650
SE 130
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX718 ISSUE 4 - MAY 1998_ FEATURES * 6 A Peak pulse c u rre n t * E xce lle n t h FE c h a ra cte ristics up to 6 A pulsed * lo w s a tu ra tio n v o lta g e * lc C ont 2.5A
|
OCR Scan
|
ZTX718
ZTX618
|
PDF
|
2N6701
Abstract: s parameters 4ghz HXTR-5101 4ghz s parameters transistor S21E 4ghz transistor n HPAC-100
Text: m COM PONENTS LINEAR POWER TRANSISTOR 2N6701 HXTR-5101 Features H IG H P 1dB LIN E A R PO W ER 23 dBm Typical at 2 G Hz 22 dBm Typical at 4 G Hz BIPOLAR 1.0 '0.041 TYP TRANSISTORS HEW LETT W , PACKARD H IG H P1dB G A IN 13 dB Typical at 2 G Hz 7.5 dB Typical at 4 GHz
|
OCR Scan
|
2N6701
HXTR-5101)
HPAC-100
2N6701
s parameters 4ghz
HXTR-5101
4ghz s parameters transistor
S21E
4ghz transistor n
|
PDF
|
x5 sot89
Abstract: QBCX51 8CX53
Text: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - FEBRUARY 1996_ C O M P L E M E N T A R Y TYPE - BCX51 BCX52 BCX53 Q BCX51 - B C X54 B C X 5 2 - B C X55 B C X 5 3 - B C X56 P A R T M A R K I N G D E T A IL S BCX5 1 -A A BCX52 -A E BCX53
|
OCR Scan
|
BCX51
BCX52
BCX53
BCX53
x5 sot89
QBCX51
8CX53
|
PDF
|
transistor AC 237
Abstract: AA24
Text: calodic Improved Low Cost Triple CRT Driver CORPORATION CVA2411TX FEATURES DESCRIPTION • • • • • The CVA2411TX is an improved low cost version that features excellent gray scale linearity with no crossover distortion and less EMI for 69kHz horizontal scanning frequency monitors.
|
OCR Scan
|
CVA2411TX
CVA2411TX
69kHz
T0220
65MHz
transistor AC 237
AA24
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IN TE G R A TE D CIRCUITS nlEET TDA5744; TDA5745 Low power mixers/oscillators for hyperband tuners 1998 Mar 09 Preliminary specification File under Integrated Circuits, IC02 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification
|
OCR Scan
|
TDA5744;
TDA5745
45104/1200/01/pp20
|
PDF
|
317A-01
Abstract: 2G0909
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line fj 4 .5 G H z @ 1 0 m A HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR d e s ig n e d p r i m a r i l y f o r u s e in M A T V / C A T V a m p li f i e r s a n d o t h e r NPN SILICO N b r o a d b a n d lin e a r a p p lic a t io n s d e m a n d in g h ig h p o w e r g a in w i t h lo w
|
OCR Scan
|
|
PDF
|
capacitor 330 j38
Abstract: Rogers 6010.5
Text: an A M P company Wireless Bipolar Power Transistor, 60W 1450- 1550 MHz PH1516-60 V2.00 _ 16.51 ’630 Features • • • • • • _ .4 0 0 _ (10.16) D esigned for l.inear Am plifier A pplications Class AB: -30 dBc Typ 3rd IMD at 60 W atts PKP Class A: + 5 3 dBm Typ 3rd O rd e r In te rc e p t Point
|
OCR Scan
|
PH1516-60
capacitor 330 j38
Rogers 6010.5
|
PDF
|
MHQ3467
Abstract: 2N3467
Text: MHQ3467 silicon QUAD D UAL-IN-LIN E PNP HERMETIC SILICON ANNULAR M EM ORY D R IV E R TRANSISTORS QUAD D UAL-IN-LIN E PNP SILICON M EM ORY DRIVE R TRANSISTORS . . . designed fo r m edium -current, high-speed switching, ferrite core and plated w ire mem ory driver, and MOS translator applications.
|
OCR Scan
|
MHQ3467
2N3467
O-116
50mAdc)
MHQ3467
2N3467
|
PDF
|
KT 819 transistor
Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e
|
OCR Scan
|
|
PDF
|
|
|
16G040-2C
Abstract: 16G040-2L 16G040-2X QODQ544 control logic 24 lags Phase Locked loop IC to drive VCO Fiber Optic regenerator 28 16G040
Text: TEKTRONIX INC/ TRI ÛU I N T fiRObSlfi Q Q G Q S m 2bE D T -s { Ê M L Î G ig a B it L o g ic TRÛ 7 o-.n 16G040 High Speed Clock & Data Recovery Circuit 2.0 Gbit/s NRZ Data Rate FEATURES Clock recovery and data retiming and regeneration subsystem 2.0 Gbit/s performance
|
OCR Scan
|
GGGG541
16G040
10G041A
16G041-H
050-P3
I621110
16G040-2C
16G040-2L
16G040-2X
QODQ544
control logic 24 lags
Phase Locked loop IC to drive VCO
Fiber Optic regenerator 28
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR TO SH IB A TECHNICAL TLP629, TLP629-2, TLP629-4 DATA GaAs IRED & PHOTO-TRANSISTOR TLP629 TELECOMMUNICATION OFFICE MACHINE TELEPHONE USE EQUIPMENT The TOSHIBA TLP629, -2, and -4 consists of a photo tran sisto r optically coupled to a gallium arsenide
|
OCR Scan
|
TLP629,
TLP629-2,
TLP629-4
TLP629)
TLP629
TLP629-4
150mA.
150mA
5000Vrm
|
PDF
|
"frequency comparator"
Abstract: No abstract text available
Text: TEKTRONIX INC/ TRI ÛUINT 2bE D B 0^0^210 QQG0541 7 Ö T R Ö 'T '- S O - J 1 G ig a B it L o g ic 16G040 High Speed Clock & Data Recovery Circuit 2.0 Gbit/s NRZ Data Rate FEATURES Clock recovery and data retiming and regeneration subsystem 2.0 Gbit/s performance
|
OCR Scan
|
QQG0541
16G040
10G041A
16G041-H
16G040
050P3
"frequency comparator"
|
PDF
|
ZTX752 equivalent
Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Text: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request
|
OCR Scan
|
ZVP2106C
ZVP2110A
ZVP2110C
ZVP2120A
ZTX788B
ZVP2120C
ZVP3306A
ZVP3310A
ZVP4105A
2110C
ZTX752 equivalent
transistor 42-10a data
BC369
FXTA92
BSS98
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STD29NF03L N-CHANNEL 30V - 0.017 n - 29A DPAK LOW GATE CHARGE STripFET POWER MOSFET PRELIMINARY DATA TYP E STD29NF03L . . . . . V dss 30 V R dS oii < 0.0 2 2 Q. Id 29 A TYPICAL RDS(on) =0.017 £2 TYPICAL Qg = 1 8nC @ 10V OPTIMAL RDs(on)xQg TRADE-OFF CONDUCTION LOSSES REDUCED
|
OCR Scan
|
STD29NF03L
O-252
0068772-B
|
PDF
|
UEI 20 SP 010
Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Text: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"
|
OCR Scan
|
64-KBit-Sehreib--Iese-Speicher
086/11/B9
UEI 20 SP 010
Datenblattsammlung
u82720
mikroelektronik datenblattsammlung
VEB mikroelektronik
UB8820M
"halbleiterwerk frankfurt"
UEI 15 SP 020
Aktive elektronische Bauelemente 1988 Teil 2
B4207D
|
PDF
|
16G040-2C
Abstract: 16G040-2L 16G040-2X Fiber Optic regenerator 28 Gigabit Logic
Text: G I G A B I T LO GI C INC IGBLI G ig a B it ITE D QQ 02 QQÌ 5 • 16G040 T '-7S'H -Z £i L o g ic High Speed Clock & Data Recovery Circuit 2.0 Gbit/s NRZ Data Rate FEA TU R ES Clock recovery and d a ta retiming and regeneration subsystem on a chip 2 .0 Gbit/s perform ance with ext. clock source;
|
OCR Scan
|
Q002GGÃ
16G040
10G041A
90GCDR
16G040-2C
16G040-2L
16G040-2X
Fiber Optic regenerator 28
Gigabit Logic
|
PDF
|
12FL
Abstract: B350067
Text: , i - SPECIFICATION FOR APPROVAL CUSTOMER DESCRIPTION DIMENSIONS MODEL P/N APPROVED NO APPROVED BY j DC BRUSHLESS BLOWER 35X35X7 mm GB0535ADB2-8 M AUTHORIZED . ¡. 89 2 2 1 DAWN 'pdaacf 12lt5 C H KD SPEC. NO. ISSUE DATE EDITION REVISE DATE E.SPEC B350067
|
OCR Scan
|
35X35X7
GB0535ADB2-8
B350067
EB10084
12FL
|
PDF
|
INVP inverter
Abstract: No abstract text available
Text: October 1989 PRELIMINARY OPEN ASIC DATA SHEET RADIATION TOLERANT LIBRARY MBRT GATE ARRAY SERIES - 2\xJ2 METAL LAYERS MB 0850RT - MB 1300RT - MB 2000RT - MB 2700RT - MB 3200RT MB 4000RT - MB 5000RT - MB 6600RT - MB 7500RT FEATURES ON CHIP SPECIAL FUNCTION - test mode
|
OCR Scan
|
0850RT
1300RT
2000RT
2700RT
3200RT
4000RT
5000RT
6600RT
7500RT
INVP inverter
|
PDF
|
12FL
Abstract: UL3265
Text: SUNON SPECIFICATION FOR APPROVAL CUSTOMER DESCRIPTION DC BRUSHLESS BLOWER DIMENSIONS 35X35X6 mm M O D E L GB0535AEBI-8 P/N M APPROVED NO APPROVED BY AUTHORIZED DAWN. 'fyacÁM 3¡30 CH KD. SPEC. NO. ISSUE DATE EDITION REVISE DATE E.SPEC B350071 03.03.1999
|
OCR Scan
|
35X35X6
GB0535AEBI-8
B350071
EB10077
gb0535aeb1-8
12FL
UL3265
|
PDF
|
