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    KD TRANSISTOR Search Results

    KD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    KD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NEM0899F06-30

    Abstract: J294 J29-4
    Text: DATA SHEET PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR NEM0899F06-30 N-CHANNEL SILICON POWER MOSFET FOR UHF-TV TRANSMITTER POWER AMPLIFIER FEATURES PACKAGE DRAWING Unit: mm • High output, high gain, high efficiency Po = 100 W, GL = 12 dB, KD = 50 %


    Original     		PDF NEM0899F06-30 NEM0899F06-30 J294 J29-4

    AN80T07

    Abstract: ic901 KD-SC900R AN80T sc900r audio output TRANSISTOR NPN
    Text: KD-SC900R 4.2 AN80T07 IC901 : Regulator • Block diagram MODE1 ACC NC 6 3 5 *ASO, Peak Current Protection. *Thermal Protection (Except VDD, Comp output). Outputs Reference Voltage Pre Drive Pre Drive Pre Drive EXT Out Pre Drive ANT Out 15 14 ILM 10V 11


    Original     		PDF KD-SC900R AN80T07 IC901) 100mA 1200mA 300mA 300mA) 500mA AN80T07 ic901 KD-SC900R AN80T sc900r audio output TRANSISTOR NPN

    8XC196KC

    Abstract: 8XC196KD ACH6 INT07 8XC196KC instructions ad478 transistor BL P44 8XC196KC/KD
    Text: 8XC196KC/KD Signal Descriptions B APPENDIX B 8XC196KC/KD SIGNAL DESCRIPTIONS This appendix provides reference information for the pin functions of the 8XC196KC and 8XC196KD. Table B-l defines the columns used in Table B-2, which describes the pin functions. Table B-3 shows the reset status of I/O and control pins, and Table B-4 defines


    OCR Scan     		PDF 8XC196KC/KD 8XC196KC 8XC196KD. 7/AD15 6/AD14 5/AD13 4/AD12 3/AD11 2/AD10 8XC196KD ACH6 INT07 8XC196KC instructions ad478 transistor BL P44

    Untitled

    Abstract: No abstract text available
    Text: International IÖR Rectifier PD - 91688 IRG4PSH71 KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins


    OCR Scan     		PDF IRG4PSH71 O-247 O-264,

    Untitled

    Abstract: No abstract text available
    Text: International IÖR Rectifier PD - 91684 IRG4PSC71 KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins


    OCR Scan     		PDF IRG4PSC71 O-247 O-264,

    D-42

    Abstract: KD221275A7 reverse forward control diagram KD221K75 kd221275a kd2212
    Text: mmn sK KD 221275A 7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 DUcil DdfHnCjtOn T ran sis to r M o d u le 75 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use


    OCR Scan     		PDF KD221275A7 Amperes/1200 D-42 KD221275A7 reverse forward control diagram KD221K75 kd221275a kd2212

    sk3018

    Abstract: SK3027/130 SK3083 SK3024 SK3004 SK3004/102A SK3012/105 sk3123 SK3115/165 SK3115
    Text: THOMSON/ DISTRIBUTOR DTE D | =]GEbfl73 □QG33bl 3 | . T ' 2 1 -O l PERFORMANCE DATA 3ipolar Transistors LIM IT C O NDITIONS CH AR ACTER ISTIC S BR EA KD O W N V O LT A G E RCA Typ« Polarity and : Material Device Dissi­ pation Collector Current Contin­


    OCR Scan     		PDF GEbfl73 QG33bl T-21-OÃ SK3003A/126A T-008 SK3004/102A T-004 SK3006/160 T-001 SK3007A sk3018 SK3027/130 SK3083 SK3024 SK3004 SK3012/105 sk3123 SK3115/165 SK3115

    12FL

    Abstract: B350067
    Text: , i - SPECIFICATION FOR APPROVAL CUSTOMER DESCRIPTION DIMENSIONS MODEL P/N APPROVED NO APPROVED BY j DC BRUSHLESS BLOWER 35X35X7 mm GB0535ADB2-8 M AUTHORIZED . ¡. 89 2 2 1 DAWN 'pdaacf 12lt5 C H KD SPEC. NO. ISSUE DATE EDITION REVISE DATE E.SPEC B350067


    OCR Scan     		PDF 35X35X7 GB0535ADB2-8 B350067 EB10084 12FL

    12FL

    Abstract: UL3265
    Text: SUNON SPECIFICATION FOR APPROVAL CUSTOMER DESCRIPTION DC BRUSHLESS BLOWER DIMENSIONS 35X35X6 mm M O D E L GB0535AEBI-8 P/N M APPROVED NO APPROVED BY AUTHORIZED DAWN. 'fyacÁM 3¡30 CH KD. SPEC. NO. ISSUE DATE EDITION REVISE DATE E.SPEC B350071 03.03.1999


    OCR Scan     		PDF 35X35X6 GB0535AEBI-8 B350071 EB10077 gb0535aeb1-8 12FL UL3265

    8XC196KC

    Abstract: 8XC196KC instructions 8XC196KC instruction set 8XC196KC/KD
    Text: Special Operating Modes 12 CHAPTER 12 SPECIAL OPERATING MODES The 8XC196KC/KD supports three special operating modes: Idle, Powerdown, and OnCircuit Emulation ONCE . Idle and Powerdown modes reduce power consumption; the OnCircuit Emulation (ONCE) mode is a test mode that electrically isolates the chip from the


    OCR Scan     		PDF 8XC196KC/KD 8XC196KC 8XC196KC instructions 8XC196KC instruction set

    AP-125

    Abstract: 8XC196KC 8XC196KC chapter 5 interrupts 8XC196KC instruction set AD0-AD15 kd 116 transistor A0123-B0 8XC196KC/KD
    Text: Minimum Hardware Considerations il CHAPTER 11 MINIMUM HARDWARE CONSIDERATIONS The 8XC196KC/KD has several basic requirements for operation within a system. It requires an external source of power, ground, the clock signal, and the RESET# signal. This chapter describes options for providing the basic requirements and describes other hardware


    OCR Scan     		PDF 8XC196KC/KD 0000H, AP-125 8XC196KC 8XC196KC chapter 5 interrupts 8XC196KC instruction set AD0-AD15 kd 116 transistor A0123-B0

    955 100 12 LAO

    Abstract: MPS6571 MPS-6571
    Text: MPS6571 silicon NPN SILICON ANNULAR TRANSISTOR NPN SILICON AMPLIFIER TRANSISTOR . designed for pream plifiers in a u d io am plifier applications. • C olle cto r-E m itte r B re a kd ow n V oltage - • L o w N o ise Figure — N F = 1.2 d B (T yp) @ le = 1 00 ß A d c


    OCR Scan     		PDF MPS6571 955 100 12 LAO MPS6571 MPS-6571

    2N2109

    Abstract: 2N2110 2N2111 2N2112 2N2113 2N2114 2N2116 2N2117 2N2118 2N2119
    Text: 8365700 SOLI» SOLID POWER POWER C O R P 95C CORP 00122 —Ol D » e | fl3bS?DD ODGDlSa fi § ~ POWER TRANSISTORS TYPE NO. TO-114 PT MAXIMUM RATINGS @ Ic 25°C BV cbo BV ceo BVebo A V V V Watts hFE MIN MAX <kD Ic VcE V A Test Sat Voltages Conditions V ce V be


    OCR Scan     		PDF 0DD0152 O-114 2N2109 2N2110 2N2111 2N2112 2N2113 2N2114 2N2116 2N2117 2N2118 2N2119

    2T31

    Abstract: No abstract text available
    Text: r - 3 3 - Z ^ f P ow er Transistors BUX37 HARRI S File N um ber SEMI COND SECTOR S7E D B M3 Q2 2 7 1 QQE0 2 5 4 M »HAS 15-Ampere N-P-N Monolithic Darlington Power Transistor TERMINAL DESIGNATIONS 400 V , 35 W Gain of 20 at 15A F ea tu res: • H ig h vo ltag e b re a kd o w n


    OCR Scan     		PDF BUX37 15-Ampere O-204AA GQ2Q25b 2T31

    2SC3873

    Abstract: No abstract text available
    Text: Power Transistors 2SG3873 2S C 3873 Silicon PNP Triple-Diffused Planar Type P a c k a g e D im e n s io n s H igh B re a kd o w n V o lta g e , H igh S p e e d S w itch in g Unit ' mm • F e a tu re s 5.2max. 15.5max 6.9min • High speed switching 3.2 • High collector-base voltage V cbo


    OCR Scan     		PDF 2SC-3873 2SC3873 bi3ea52 2SC3873

    DG37MS

    Abstract: CD40488 15-V CD4048B DG37
    Text: HARRIS SEMICOND 44E D SECTOR H I 4 3 Q 2 2 7 1 QQ3745fe. 2 « ¡ H A S r-V3'Z/ HARRIS CD4048B Types C M O S Multifunction Expandable 8-Input Gate BINARY CONTROL INPUTS 'FONCTION co ntr ol 3-STATE * x b *t Kd , CONTROL I I I r H igh-Voltage Types 2 0 -V o lt Rating


    OCR Scan     		PDF 20-Volt 43G2271 QQ374Sfei CD4048B CD40488 S2C3-31671 92CS-22265 92CS-31669 92CS-3I6T4 DG37MS 15-V DG37

    BC461

    Abstract: JCASE BC441
    Text: BC 394 THERMAL DATA The rm a l resistance ¡u n ctio n -ca se The rm a l resistance ju n c tio n -a m b ie n t V BR CBO C o lle cto r-b a se b re a kd o w n voltage 0e =0) l c = 100 V CEO (sus)* C o lle c to r-e m itte r sustaining voltage Ob = 0 ) V(BR)EBO E m itte r-b a se


    OCR Scan     		PDF

    KD221203A7

    Abstract: KD524505 KD221404 KD225575 KD321408 kd424520 KD721KA1 kd2212 KD7245A1 kd221
    Text: D 0 111E R E X t>4E J> INC rnmenex m 72T4L21 0 0 0 b 5 4 ci D b4 * P R X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 DARLINGTON TRANSISTOR MODULES (Continued)


    OCR Scan     		PDF 72T4L21 BP107, KD7245A1 KD721KA1 KD7212A1 KD221203A7 KD524505 KD221404 KD225575 KD321408 kd424520 kd2212 kd221

    KD221203A7

    Abstract: KD524575 KD225575 KD524505 KD221K75 KD221205A7 KD221404 KD421415 KD7212A1 kd224575
    Text: D 0 111E R E X I N C t>4E rnmenex J> m 72T4L21 0 0 0 b 5 4 ci D b 4 * P R X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 DARLINGTON TRANSISTOR MODULES (Continued)


    OCR Scan     		PDF 72T4L21 BP107, KD7245A1 KD721KA1 KD7212A1 KD724502 KD221203A7 KD524575 KD225575 KD524505 KD221K75 KD221205A7 KD221404 KD421415 kd224575

    pwm INVERTER welder

    Abstract: KD224510 250A darlington transistor Kd224515 powerex snubber capacitor inverter welder circuit kd2245 kd224510 application note KD221K75 transistor
    Text: W U IfB tE K Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Darlington Transistor Modules Application Information 2.7 Reverse Transistor Action and dv/dt Turn-on A problem that occurs with the half-bridge circuit configuration fed


    OCR Scan     		PDF

    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


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    Untitled

    Abstract: No abstract text available
    Text: PNP Silicon Planar Medium Power Transistors Z TX 554 ZTX 555 ZTX 556 ZX557 FEATURES • • • • • 1W p o w e r d issipation a t T amb = 2 5 ° C V oltages up to 3 0 0 V Excellent gain c h a ra cte ristics up to 3 0 0 m A L o w sa tu ra tio n voltages


    OCR Scan     		PDF ZX557 ZTX554 ZTX555 ZTX556 ZTX557

    ZTX690B

    Abstract: No abstract text available
    Text: NPN Silicon Planar Medium Power High Gain Transistors ZTX689B ZTX690B ZTX692B ZTX694B PRELIMINARY INFORMATION FEATURES • • • • • • High gain — 5 0 0 m in. Up to 3 a m p s co n tin u o u s cu rre n t Gain specified up to 6 amps 1 .5 w a tt p o w e r dissip a tio n at


    OCR Scan     		PDF ZTX689B ZTX690B ZTX692B ZTX694B SE147

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon High-Voltage Transistor BFN 22 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary type: BFN 23 PNP


    OCR Scan     		PDF Q62702-F1024 OT-23 EHP00610 flE35b05 EHP00612 235b05