Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX556 ZTX557 ISSUE 1 - JULY 94_ FEATURES * 300 V o lt V CE0 * 0.5 A m p c o n tin u o u s c u rre n t * Pf„ f= 1 W a tt E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS.

ZTX556

Contextual Info: ZTX556 Not Recommended for New Design Please Use ZTX557 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX556 ZTX557 ISSUE 1 – JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS tf ts µs µs IC/IB=10

ZTX556

Abstract: ZTX557 DSA003769
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX556 ZTX557 ISSUE 1 – JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS tf ts µs µs IC/IB=10 IB1=IB2=IC/10 16 4 3 -0.4 -0.2 tf 12 tr 2 -0.0001

Contextual Info: ZETEX SEM ICONDU CTOR S IbE D • c^70S7fl 000bfl7fl b ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS \ ' Z c\-2-3> NPN HIGH VOLTAGE Dice type VCBO Min VCEO Min Volts Volts •cBO , Max a t VCB nA Volts at M ilt Max v« mA V o lt* V easw ■ at lc

Contextual Info: PNP Silicon Planar Medium Power Transistors Z TX 554 ZTX 555 ZTX 556 ZX557 FEATURES • • • • • 1W p o w e r d issipation a t T amb = 2 5 ° C V oltages up to 3 0 0 V Excellent gain c h a ra cte ristics up to 3 0 0 m A L o w sa tu ra tio n voltages

MPSA42

Abstract: MPSA43 ZTX341 ZTX342 ZTX454 ZTX455 ZTX654 ZTX655 ZTX656 ZTX657
Contextual Info: SEMICONDUCTOR DICE NPN HIGH VOLTAGE Min. Min. Max. at V CB Volts Volts ZTX657 M PSA42 ZTX656 M PSA43 ZTX655 ZTX455 ZTX454 ZTX654 ZTX342 ZTX341 h FE ICBO V CBO V CEO Dice type 300 300 200 200 150 16 0 140 125 120 10 0 300 300 200 200 150 14 0 120 125 120 100

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ISSU E 1 - JU L Y FEATU RES * 300 Volt V.CEO 0.5 Amp continuous current P,o,= 1 Watt E E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

2LU50

Contextual Info: E-LINE TRANSISTORS TABLE 5: HIGH PERFORMANCE E LINE TRANSISTORS Pd = 1 W att The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 Amp with power dissipation capabilities of 1 Watt at 25°C ambient temperature. Typical

Contextual Info: TS PLESSEY SENI C O N D / D I SC R E T E 7220533 PLESSEY F Ë Ï 7E50533 000SD7M 7 95D 0 5 0 7 4 SEMICOND/ D IS CRE TE Super E-line transistors TABLE 4 : NPN/PNP HIGH VOLTAGE TRANSISTORS The transistors shown in this table are designed for driving numerical indicator tubes, neon lamps

2TX650

Abstract: BFS97 BFS98 ZTX337 ZTX338 ZTX452 MPSA06 MPSA56 ZTX451 ZTX454
Contextual Info: 5bE D m In ? Q S ? ñ 00DbT3T S03 • Z E T B TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1000mW at 25 °C ambient temperature.

ZTX458

Abstract: BF493 BF392 BF393 MPSA92 ZTX558 ZTX658 ZTX757 ZTX758 2N5401 BF391
Contextual Info: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The tra n s is to rs s h o w n in th is ta b le are designed fo r d rivin g num erical in d ica to r tu b es, neon lam ps and o th e r a p p lica tio n s requiring high vo lta g e ca p a b ility. V cbo M ax ICBO

BF493

Abstract: ZTX338 MPSA06 ZTX451 ZTX452 ZTX454 ZTX551 ZTX552 ZTX553 ZTX554
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 ° C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay S w itching, etc.

2TX650

Abstract: zetex transistors TO92 BF493 ZTX458 ZTX558 ZTX758 BF392 BF393 MPSA92 ZTX658
Contextual Info: SbE » • ^70570 DGDb^M2 GTfl H Z E T B T -'Z /l-O l TABLE 13 : NPIU/PNP HIGH VOLTAGE TRANSISTORS The transistors shown in this table are designed for driving numerical indicator tubes, neon lamps and other applications requiring high voltage capability.

ZT Ferranti

Abstract: BF4935P SE-169 TX-550 X752 X449
Contextual Info: ZETEX S E M I C O N D U C T O R S =IS]> D • clci7 Q S 78 0 0 0 S 0 7 S 1 M Z E T B ~T-Tl-Ol Super E-line transistors TABLE 1 : NPN/PNP SUPER E-LINE These devices offer the ultimate performance for TQ-92 style package, they have been designed to operate and provide useful gain at current

BFS98

Abstract: BFS61 BFS59 BFS60 BFS97 ZTX452 MPSA06 ZTX451 ZTX454 ZTX551
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 ° C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Sw itching, etc.

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request

ZTX558

Abstract: PSA42
Contextual Info: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The transistors show n in this table are designed for driving numerical indicator tubes, neon lamps and other applications requiring high voltage capability. Max Type V CBO V CEO M ax V CEIsat 'c V V mA 400 400

ztx456

Contextual Info: E-LINE TRANSISTORS TABLE 5: HIGH PERFORMANCE E-LINE TRANSISTORS Pd =1 Watt The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 A m p w ith pow er dissipation capabilities of 1 W a tt at 25°C am bient tem perature. Typical

2SA566

Abstract: 40319 2sa8160 2SA816-Y 2SA816Y 2SA13560 40634S 2SA816 TN2905 MJ4646
Contextual Info: POWER SILICON PNP Item Number Part Number I C -5 10 15 20 25 30 35 40 45 50 60 2SB806 2SA1248 40634 40319 40319L 40319S 40406 40538 :g~~:~ 65 70 40537 40537L 40537S 40362 40362L 40362S 40634L 40634S ~~~~g~7 75 80 85 90 95 Ic Max V(BR)CEO (A) (V) hFE Min Max

BC337B

Abstract: BFS98 ZTX338 ZTX452 MPSA06 ZTX451 ZTX454 ZTX551 ZTX552 ZTX553
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 ° C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Sw itching, etc.

Contextual Info: Section 2: Bipolar Transistors _ High V o lta g e T r a n s is t o r s I 0 0 to 5 0 0 V o its E -L in e P N P H ig h V o lta g e V e to up to 5 0 0 V T r a n s is to r s P in o u t Details: 1-C ollector, 2-B ase, 3 -E m itte r

Contextual Info: S EM IC O N D U C TO R DICE NPN HIGH VOLTAGE hFE at 'CBO V CBO VcEO Dice type Min. Min. Max. at VCB ZTX657 MPSA42 ZTX656 MPSA43 ZTX655 ZTX455 ZTX454 ZTX654 ZTX342 ZTX341 Volts Min. Max. Volts Volts nA 300 300 200 200 150 160 140 125 120 100 100 200 100 200