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    Pentair Equipment Protection - Hoffman EKDS12124

    COMPACT ENC SS 2DR W MP
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    DigiKey EKDS12124 Bulk 1
    • 1 $7724.11
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    Pentair Equipment Protection - Hoffman EKDS12124PE

    FLOOR STANDING 1200X1200X400
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EKDS12124PE Bulk 1
    • 1 $7546.57
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    Pentair Equipment Protection - Hoffman EKDS12124-4X

    COMPACT ENC SS 2DR W MP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EKDS12124-4X Bulk 1
    • 1 $8459.3
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    Pentair Equipment Protection - Hoffman EKDS12124-316

    COMPACT ENC SS 2DR W MP
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    DigiKey EKDS12124-316 Bulk 1
    • 1 $12092.76
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    • 100 $12092.76
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    KEC KDS121-RTK/P

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    Quest Components KDS121-RTK/P 2,400
    • 1 $0.52
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    • 1000 $0.208
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    KDS121 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KDS121 Korea Electronics Switching Diode Original PDF
    KDS121 Korea Electronics Switching Diode Original PDF
    KDS121 Korea Electronics SILICON EPITAXIAL PLANAR DIODE Scan PDF
    KDS121E Korea Electronics Switching Diode Original PDF
    KDS121E Korea Electronics Switching Diode Original PDF
    KDS121V Korea Electronics Switching Diode Original PDF

    KDS121 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KDS121E

    Abstract: transistor ESM 30
    Text: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Small Package : ESM. Low Forward Voltage : VF=0.9V Typ. . B Fast Reverse Recovery Time : trr=1.6ns(Typ.). MAXIMUM RATING (Ta=25 CHARACTERISTIC


    Original     		PDF KDS121E KDS121E transistor ESM 30

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS121V TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES 2011. 12. 23 Revision No : 1 1/2


    Original     		PDF KDS121V

    KDS121

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS121 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E B M M : USM. : VF=0.9V Typ. . D J 2 A : trr=1.6ns(Typ.). G FEATURES ・Small Package ・Low Forward Voltage ・Fast Reverse Recovery Time ・Small Total Capacitance


    Original     		PDF KDS121 100mA KDS121

    KDS121V

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS121V TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : VSM. B : VF=0.9V Typ. . : trr=1.6ns(Typ.). H G D 2 : CT=0.9pF (Typ.). A FEATURES ・Very Small Package ・Low Forward Voltage ・Fast Reverse Recovery Time


    Original     		PDF KDS121V KDS121V

    KDS121

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS121 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 B3 1 2 Item Marking Description Device Mark B3 KDS121 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF KDS121 KDS121

    KDS121E

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. : ESM. E : VF=0.9V Typ. . B : trr=1.6ns(Typ.). : CT=0.9pF (Typ.). D 2 DIM A B C D G H A FEATURES ・Small Package ・Low Forward Voltage ・Fast Reverse Recovery Time


    Original     		PDF KDS121E KDS121E

    KDS121V

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS121V TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : VSM. B : VF=0.9V Typ. . : trr=1.6ns(Typ.). G D 2 : CT=0.9pF (Typ.). 1 3 K H A FEATURES ᴌVery Small Package ᴌLow Forward Voltage ᴌFast Reverse Recovery Time


    Original     		PDF KDS121V 100mA KDS121V

    marking B3

    Abstract: KDS121E
    Text: SEMICONDUCTOR KDS121E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking B3 No. 2000. 12. 27 Item Marking Description Device Mark B3 KDS121E hFE Grade - - Revision No : 0 1/1


    Original     		PDF KDS121E marking B3 KDS121E

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Small Package : ESM. Low Forward Voltage : VF=0.9V Typ. . B Fast Reverse Recovery Time : trr=1.6ns(Typ.). MAXIMUM RATING (Ta=25 CHARACTERISTIC


    Original     		PDF KDS121E

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS121 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES 2008. 9. 8 Revision No : 5 1/2


    Original     		PDF KDS121

    KDS121

    Abstract: KDS12
    Text: SEMICONDUCTOR KDS121 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : USM. B M M : VF=0.9V Typ. . : trr=1.6ns(Typ.). SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 * mA Average Forward Current


    Original     		PDF KDS121 KDS121 KDS12

    ESM diode

    Abstract: KDS121E
    Text: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.9V Typ. . : trr=1.6ns(Typ.). D H : CT=0.9pF (Typ.). C 3 1 MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + DIM A B G 2 A FEATURES


    Original     		PDF KDS121E 100Temperature 100mA ESM diode KDS121E

    marking B3

    Abstract: KDS121V
    Text: SEMICONDUCTOR KDS121V MARKING SPECIFICATION VSM PACKAGE 1. Marking method Laser Marking 2. Marking B3 1 No. 2006. 2. 10 Item Marking Description Device Mark B3 KDS121V Revision No : 0 1/1


    Original     		PDF KDS121V marking B3 KDS121V

    KDS121

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS121 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : USM. B M M : VF=0.9V Typ. . D J 2 : trr=1.6ns(Typ.). A : CT=0.9pF (Typ.). 3 1 G FEATURES ・Small Package ・Low Forward Voltage ・Fast Reverse Recovery Time


    Original     		PDF KDS121 KDS121

    transistor ESM

    Abstract: marking B3 KDS121E ESM diode
    Text: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.9V Typ. . : trr=1.6ns(Typ.). SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 * mA Average Forward Current


    Original     		PDF KDS121E 100mA transistor ESM marking B3 KDS121E ESM diode

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    S78DM12Q

    Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
    Text: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power


    Original     		PDF SN431) SUN0550F/D O-220AB-3L O-220F-3L O-220F-4SL DIP-14 DIP-20 DIP-18 S78DM12Q Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


    Original     		PDF SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor

    GR09

    Abstract: KDS121
    Text: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.LTD. KDS121 SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : USM. : V f =0.9V Typ. .


    OCR Scan     		PDF KDS121 100mA GR09 KDS121