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    KDS2236 Search Results

    KDS2236 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KDS2236 Korea Electronics VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE Scan PDF
    KDS2236M Korea Electronics AFC Application for FM Original PDF
    KDS2236M Korea Electronics AFC Application for FM Scan PDF
    KDS2236M Korea Electronics VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE Scan PDF
    KDS2236S Korea Electronics AFC Application for FM Original PDF
    KDS2236S Korea Electronics VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE Scan PDF
    KDS2236S Korea Electronics AFC Application for FM Scan PDF

    KDS2236 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KDS2236M

    Abstract: a016 2236a 2236 A
    Text: SEMICONDUCTOR KDS2236M MARKING SPECIFICATION TO-92M PACKAGE 1. Marking method Laser Marking 2. Marking 2236 A 016 No. Item Marking Description 1 Device Name 2236 KDS2236M 2 Polarity A Anode 3 Lot No. 016 00.12.27 Revision No : 00 Year 0 ~ 9 : 2000~2009 16


    Original     		PDF KDS2236M O-92M KDS2236M a016 2236a 2236 A

    Untitled

    Abstract: No abstract text available
    Text: KDS2236 Diodes Miscellaneous Diode Semiconductor Material Package StyleDO-35 Mounting StyleT DescriptionAutomatic Frequency Control Diode for FM Receiver


    Original     		PDF KDS2236 StyleDO-35

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS2236M/S TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL LANAR DIODE AFC APPLICATION FOR FM RECEIVER. FEATURES 1998. 6. 15 Revision No : 2 1/2


    Original     		PDF KDS2236M/S

    marking J3 sot23

    Abstract: MARKING J3 SOT-23 marking J3 J3 SOT23 MARK J3 KDS2236S J3 SOT sot-23 Marking J3
    Text: SEMICONDUCTOR KDS2236S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking J3 No. 1 Item Marking Device Mark J3 KDS2236S - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


    Original     		PDF KDS2236S OT-23 R1998. marking J3 sot23 MARKING J3 SOT-23 marking J3 J3 SOT23 MARK J3 KDS2236S J3 SOT sot-23 Marking J3

    KDS2236S

    Abstract: KDS2236M *2236 capacitance
    Text: SEMICONDUCTOR KDS2236M/S TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL LANAR DIODE AFC APPLICATION FOR FM RECEIVER. B A FEATURES High Q : Q=70 Min. (f=50MHz). O F Low Reverse Current : IR=100nA(Max.) (VR=4V). H G M C SYMBOL RATING UNIT Reverse Voltage


    Original     		PDF KDS2236M/S 50MHz) 100nA O-92M 50MHz KDS2236S KDS2236M *2236 capacitance

    KDS2236M

    Abstract: KDS2236S 2236A
    Text: KDS2236M/S SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL LANAR DIODE TECHNICAL DATA AFC APPLICATION FOR FM RECEIVER. B A FEATURES ᴌHigh Q : Q=70 Min. (f=50MHz). O F ᴌLow Reverse Current : IR=100nA(Max.) (VR=4V). H G M C MAXIMUM RATING (Ta=25ᴱ)


    Original     		PDF KDS2236M/S 50MHz) 100nA O-92M 50MHz KDS2236M KDS2236S 2236A

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS2236M/S TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL LANAR DIODE AFC APPLICATION FOR FM RECEIVER. B A FEATURES ・High Q : Q=70 Min. (f=50MHz). O F ・Low Reverse Current : IR=100nA(Max.) (VR=4V). H G M C MAXIMUM RATING (Ta=25℃)


    Original     		PDF KDS2236M/S 50MHz) 100nA KDS2236M) O-92M 50MHz

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    audio compressor expander IC

    Abstract: GV 269 1010E KB8528 S1T8528 S1T8528X01-Q0R0 driver ic micom lc colpitt oscillator audio compressor expander IC 8 pin mic preamp compressor
    Text: ENHANCED-1 CHIP CT0 RF IC S1T8528 INTRODUCTION S1T8528 is a 1 CHIP RF IC which can be used in high performance CTO CLP systems at max. 60MHz. S1T8528 is designed to include a receiver, PLL and COMPANDER to minimize PCB space requirements. Improved RX characteristics such as inter-modulation,


    Original     		PDF S1T8528 S1T8528 60MHz. 48-QFP-1010E Vin22 100nF audio compressor expander IC GV 269 1010E KB8528 S1T8528X01-Q0R0 driver ic micom lc colpitt oscillator audio compressor expander IC 8 pin mic preamp compressor

    lc colpitt oscillator

    Abstract: FMC-u1 1010E KB8528 S1T8528 S1T8528X01-Q0R0 audio compressor expander IC 8 pin 10.7MHz crystal filter CLO4
    Text: ENHANCED-1 CHIP CT0 RF IC S1T8528 INTRODUCTION S1T8528 is a 1 CHIP RF IC which can be used in high performance CTO CLP systems at max. 60MHz. S1T8528 is designed to include a receiver, PLL and COMPANDER to minimize PCB space requirements. Improved RX characteristics such as inter-modulation,


    Original     		PDF S1T8528 S1T8528 60MHz. 48-QFP-1010E KB8528 Vin22 100nF lc colpitt oscillator FMC-u1 1010E KB8528 S1T8528X01-Q0R0 audio compressor expander IC 8 pin 10.7MHz crystal filter CLO4

    "RF IC"

    Abstract: audio compressor expander IC audio compressor expander IC 8 pin driver ic micom KB8528Q colpitt oscillator design lc colpitt oscillator S41 rectifier 100N 1010E
    Text: Final version 99.4.12 ENHANCED-1 CHIP CT0 RF IC KB8528 INTRODUCTION KB8528 is a 1 CHIP RF IC which can be used in high performance CTO CLP systems at max. 60MHz. KB8528 is designed to include a receiver, PLL and COMPANDER to minimize PCB space requirements. Improved RX characteristics such


    Original     		PDF KB8528 KB8528 60MHz. 48-QFP-1010E "RF IC" audio compressor expander IC audio compressor expander IC 8 pin driver ic micom KB8528Q colpitt oscillator design lc colpitt oscillator S41 rectifier 100N 1010E

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


    Original     		PDF SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD

    "RF IC"

    Abstract: KB8528 SAO1 KDS2236 compressor ic rf ic 25pf varicap rf s25
    Text: ENHANCED-1 CHIP CT0 RF IC KB8528 Characteristic graph CO NTENTS - Current consumption Compressor part Expander part PLL part 1 KB8528 ENHANCED-1 CHIP CT0 RF IC TEST CIRCUIT Vin27 10nF 10uF Vccrx + RAo 390Ω 10.7MHz 0.01uF 0.01uF 500§Ú-1000§Ú S34 1§Ú


    Original     		PDF KB8528 Vin27 240MHz 680uH 455KHz 180pF 100nF Vin22 "RF IC" KB8528 SAO1 KDS2236 compressor ic rf ic 25pf varicap rf s25

    KDS2236M

    Abstract: KDS2236S marking 4v
    Text: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KDS2236M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AFC APPLICATION FOR FM RECEIVER. KDS2236M FEATURES • High Q : Q=70 Min. (f=50MHz). • Low Reverse Current : lR=100nA(Max.) (Vr=4V).


    OCR Scan     		PDF KDS2236M/S 50MHz) 100nA KDS2236M) KDS2236S) KDS2236M T0-92M KDS2236S KDS2236M KDS2236S marking 4v

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNI CAL DATA KDS2236M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL LANAR DIODE AFC APPLICATION FOR FM RECEIVER. FEATURES • High Q : Q=70 M in. (f=50MHz). • Low Reverse Current : IR=100nA(M ax.) (V R=4V). u DIM M ILLIM ETERS A 3.20 MAX


    OCR Scan     		PDF KDS2236M/S 50MHz) 100nA O-92M

    KDS2236M

    Abstract: KDS2236S st Diode marking EE
    Text: SEMICONDUCTOR TECHNICAL DATA KDS2236M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AFC APPLICATION FOR FM RECEIVER. FEATURES • High Q : Q=70 Min. (f=50MHz). • Low Reverse Current : lR=100nA(Max.) ( V r = 4 V ) . MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF KDS2236M/S 50MHz) 100nA KDS2236M TQ-92M KDS2236M) KDS2236S) KDS2236S KDS2236M KDS2236S st Diode marking EE

    DIODE IN4007

    Abstract: IN4007 KDS1555 IN4005 IN4003 IN4004 IN4006 Diode IN4006 IN4001 KDS184S
    Text: 8 Diode KOREA *U nder Development Switching ELECTRONICS CO LTD 45E D • 52SÛ4D4 Temperature Bias Compensation KS8513A-0 V„ FM " fa v V 5 (tnA) 150 (mA) 50 T,*i (mA) 150 MIN (V) 0.63 TYP (V) 0.65 vF MAX (V) 0.68 If (mA) 3 MAX <M) 10 Ik Vr (V) 5 TYP mV/°C


    OCR Scan     		PDF 525fl404 O-92M DO-35 KDS2236 DO-41 IN4001 IN4002 IN4003 IN4004 DIODE IN4007 IN4007 KDS1555 IN4005 IN4006 Diode IN4006 KDS184S