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    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDV214VA TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. FEATURES CATHODE MARK ・High Capacitance Ratio : C2V/C25V=6.3 Min. ・Low Series Resistance : rS=0.57Ω(Max.) C D 1 2 ・Excellent C-V Characteristics, and Small Tracking Error.


    Original     		PDF C2V/C25V KDV214VA 470MHz

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDV214V TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. FEATURES CATHODE MARK ・High Capacitance Ratio : C2V/C25V=6.3 Min. ・Low Series Resistance : rS=0.57Ω(Max.) C D 1 2 ・Excellent C-V Characteristics, and Small Tracking Error.


    Original     		PDF C2V/C25V KDV214V 470MHz

    MARKING V2

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDV214VA MARKING SPECIFICATION VSC PACKAGE 1. Marking method Laser Marking 2. Marking V2 No. 2005. 4. 8 Item Marking Dvscription Device Mark V2 KDV214VA Revision No : 0 1/1


    Original     		PDF KDV214VA MARKING V2

    C25V

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDV214V TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. FEATURES CATHODE MARK High Capacitance Ratio : C2V/C25V=6.3 Min. Low Series Resistance : rS=0.57 (Max.) C D 1 2 Excellent C-V Characteristics, and Small Tracking Error.


    Original     		PDF KDV214V C2V/C25V 470MHz C25V

    C25V

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDV214VA TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. FEATURES CATHODE MARK High Capacitance Ratio : C2V/C25V=6.3 Min. Low Series Resistance : rS=0.57 (Max.) C D 1 2 Excellent C-V Characteristics, and Small Tracking Error.


    Original     		PDF KDV214VA C2V/C25V 470MHz C25V

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDV214V MARKING SPECIFICATION VSC PACKAGE 1. Marking method Laser Marking 2. Marking V1 No. 2005. 4. 8 Item Marking Dvscription Device Mark V1 KDV214V Revision No : 0 1/1


    Original     		PDF KDV214V

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SEM ICONDUCTOR KDV214VA TE CHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE s TV TUNING. FEATURES CATHODEMARK • High Capacitance Ratio : C2V/C25V=6.3 Min. • Low Series Resistance : rs=0.57Q(Max.) • Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan     		PDF C2V/C25V KDV214VA 470MHz

    Untitled

    Abstract: No abstract text available
    Text: SEM ICONDUCTOR KDV214V TE CHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. s FEA T U RE S CATHODEMARK • High Capacitance Ratio : C2V/C25V=6.3 Min. • Low Series Resistance : rs=0.57Q(Max.) • Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan     		PDF C2V/C25V KDV214V 470MHz