KERSEMI
Abstract: No abstract text available
Text: KSM9N25C/KSMF9N25C KERSEMI ELECTROIC CO.,LTD. 250V N-Channel MOSFET TO-220 TO-220F Features • • • • • • 8.8A, 250V, RDS on = 0.43Ω @VGS = 10 V Low gate charge ( typical 26.5 nC) Low Crss ( typical 45.5 pF) Fast switching 100% avalanche tested
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KSM9N25C/KSMF9N25C
O-220
O-220F
KERSEMI
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Untitled
Abstract: No abstract text available
Text: FGA25N120AN TO-3P Features • High speed switching • Low saturation voltage : VCE sat = 2.5 V @ IC = 25A • High input impedance General Description Employing NPT technology, Kersemi AN series of provides low conduction and switching losses. The AN series offers an solution for application such as induction
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FGA25N120AN
45TYP
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Untitled
Abstract: No abstract text available
Text: KSM61N20 200V N-Channel MOSFET TO-220 Features • 61A, 200V, RDS on = 0.041Ω @VGS = 10 V • Low gate charge ( typical 58 nC) • Low Crss ( typical 80 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar stripe,
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KSM61N20
O-220
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Untitled
Abstract: No abstract text available
Text: TL431 KERSEMI ELECTRONIC CO.,LTD. PROGRAMMABLE VOLTAGE REFERENCE Z DESCRIPTION TO92 The TL431 is a programmable shunt voltage reference with guaranteed temperature stability over the entire temperature range of operation. The output voltage may be set to any value
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TL431
TL431
100mA
100mA
TL431C/AC
TL431I/AI
KSM431
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Untitled
Abstract: No abstract text available
Text: SN54LS280, SN54S280, SN74LS280, SN74S280 9-BIT ODD/EVEN PARITY GENERATORS/KERS SDLS152 – DECEMBER 1972 – REVISED MARCH 1988 Copyright 1988, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments
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SN54LS280,
SN54S280,
SN74LS280,
SN74S280
SDLS152
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P122-5N
Abstract: grafik MAX232 smd 1x20 lcd P122-5NLED SMD code ZB RS232 MAX232 smd Z80 ADC SMD Widerstand IC1520-2PGH
Text: EA P122-5NLED 12.99 LCD- GRAFIK MODUL 122x32 PIXEL MIT LED-BELEUCHTUNG 14 84 76 10,2 9,0 4x 2,5 19x 2,54 20 20,5 27,4 18,5 C 15,6 A 36 44 23,5 1 EA KIT122-xxx 53,6 60,5 65,7 79 alle Maße in mm TECHNISCHE DATEN * * * * * * * KONTRASTREICHE SUPERTWIST ANZEIGE BLAU
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P122-5NLED
122x32
KIT122-xxx
90x49mm
24/RS-232C
RS-232
MAX232
SED1520
P122-5N
grafik
MAX232 smd
1x20 lcd
P122-5NLED
SMD code ZB
RS232 MAX232 smd
Z80 ADC
SMD Widerstand
IC1520-2PGH
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alps 503 a
Abstract: teradyne lasar tom jones ALPS LSI Technologies alps 503 800-208 10K compass ic Teradyne ACEO Technology
Text: 30 COMPANY NAME Accolade Design Automation ACEO Technology, Inc. Acugen Software, Inc. Aldec ALPS LSI Technologies, Inc. Alta Group Aptix Corporation Aster Ingenierie S.A. Cadence Capilano Computing Chronology Corporation CINA-Computer Integrated Network Analysis
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Untitled
Abstract: No abstract text available
Text: KSMD8P10TM_F085 100V P-Channel MOSFET TO-252 Features • • • • • • • • -6.6A, -100V, RDS on = 0.53Ω @VGS = -10 V Low gate charge ( typical 12 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability Qualified to AEC Q101
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KSMD8P10TM
O-252
-100V,
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Untitled
Abstract: No abstract text available
Text: KSMD7N30 / KSMU7N30 TO-252 TO-251 % % % % % % & &' *+,) -Ω.*,/)* 0 1 /( 2 01 /32 /)4 ! 5 !!$ "
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KSMD7N30
KSMU7N30
O-252
O-251
30TYP
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Untitled
Abstract: No abstract text available
Text: KSM14N30 % % % % % % &' ' *+,-* ./Ω0+-&*+ 1 2 )* 3 12 .)3 &*4 ! 5 !!$ "
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KSM14N30
95MAX.
54TYP
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Untitled
Abstract: No abstract text available
Text: KSMF10N20 & & & & & & ' % *+,-* .'Ω/+-0*+ 1 2 0. 3 4 12 0.4 0*5 ! 6 !!$ "
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KSMF10N20
00x45Â
54TYP
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Untitled
Abstract: No abstract text available
Text: KSMD3N25 / KSMU3N25 250V N-Channel MOSFET TO-252 TO-251 Features • • • • • • 2.4A, 250V, RDS on = 2.2Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 4.7 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description
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KSMD3N25
KSMU3N25
O-252
O-251
30TYP
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Untitled
Abstract: No abstract text available
Text: KSMD19N10L / KSMU19N10L 100V LOGIC N-Channel MOSFET TO-252 TO-251 Features • • • • • • 15.6A, 100V, RDS on = 0.1Ω @VGS = 10 V Low gate charge ( typical 14 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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KSMD19N10L
KSMU19N10L
O-252
O-251
30TYP
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FQP90N10
Abstract: No abstract text available
Text: KSM90N10V2/KSMF90N10V2 100V N-Channel MOSFET • • • • • • TO-220F TO-220 Features 90 A, 100V, RDS on = 0.01Ω @VGS = 10 V Low gate charge ( typical 147 nC) Low Crss ( typical 300 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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KSM90N10V2/KSMF90N10V2
O-220F
O-220
54TYP
00x45Â
FQP90N10
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Untitled
Abstract: No abstract text available
Text: KSMD5N50 / KSMU5N50 TO-252 TO-251 $ $ $ $ $ $ % &'& *+, -Ω.)+,() / 0 ,% 1 /0 - &1 ,(2 ! 3 !!4 "
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KSMD5N50
KSMU5N50
O-252
O-251
30TYP
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Untitled
Abstract: No abstract text available
Text: KSM7N10L 100V LOGIC N-Channel MOSFET Features • • • • • • • • TO-220 7.3A, 100V, RDS on = 0.35Ω @VGS = 10 V Low gate charge ( typical 4.6 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
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KSM7N10L
O-220
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SN54180
Abstract: 1N3064 SN7418 SN74180
Text: CIRCUIT TYPES SN54180, SN74180 8-BIT O D D / E V E N PA R ITY GENERA TO RS/ CHEC KERS TIL MSI W F LA T PACKAGE TOP VIEW logic Ç vcc - INPUTS - ® ® ® ® ® ® TR U T H T A B L E 0 THRU 7 EVEN If t ! 1 Vcc 3 14 13 12 6 7 EVEN 2 11 I O U TPUTS INPUTS
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SN54180,
SN74180
32-bit
SN54180
1N3064
SN7418
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kers
Abstract: No abstract text available
Text: -250 & 42-500_ DOUBIE BALANCED M KERS DMM -4 DMM 5 to l0 0 0 M H z /+ 1 3 to + 2 4 cBm IO /SM A C am eütm s DMM-4 Schem atic PRINCIPAL SPECIFICATIONS RF/LO LO Drive, Operating Model Frequency, dBm, IF, Range, Number MHz Norn. MHz MHz DMM-4-250 5 - 500
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DMM-4-250
DC-500
DMM-12-500
kers
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kers
Abstract: No abstract text available
Text: DMT-2C -4000_ DOUBIE BAIANCED M KERS 2 5 to 6 5 G H z/+ 7 to + 1 0 d E 3 m ID /la w la s s /H jghP erihm anas /H em ieti-:TO -8 P&rk:>g& PRINCIPAL SPECIFICATIONS RF/LO Freq., MHz Model Number DMT-2C-4000 IF Freq., MHz 2500 - 6500 DC - 2500 Operating
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DMT-2C-4000
DMT-2C-4000
MIL-M-28837
/EAX201-575-0531
kers
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hi fi speaker
Abstract: No abstract text available
Text: Communication iCs Power unit 1C for pagers BH6113FV T h e B H 6 1 1 3 F V is a p o w e r u n it iC w ith a d riv e r fo r V F M s w itc h in g re g u la to r c o n tro lle r s a n d v ib r a to r s , L E D s, a n d sp e a kers, a n d a b u ilt-in b a tte ry e je ctio n se n so r.
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BH6113FV
hi fi speaker
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UEI 20 SP 010
Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Text: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"
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64-KBit-Sehreib--Iese-Speicher
086/11/B9
UEI 20 SP 010
Datenblattsammlung
u82720
mikroelektronik datenblattsammlung
VEB mikroelektronik
UB8820M
"halbleiterwerk frankfurt"
UEI 15 SP 020
Aktive elektronische Bauelemente 1988 Teil 2
B4207D
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B083D
Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
Text: > i ! U O i j q > i a | a S [ ^ ] 0 [ y y H erstellerbetriebe Bei den einzelnen Erzeugnissen werden die Herstellerbetriebe durch die nachfolgend angegebenen Symbole gekennzeichnet: VEB M ik ro e le k tro n ik „K a rl M a r x “ Erfurt L e itb e tr ie b im VEB K o m b in a t M ik ro e le k tr o n ik
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information applikation mikroelektronik
Abstract: information applikation tda 4100 a4100d "Mikroelektronik" Heft mikroelektronik Heft meuselwitz FM -piezofilter Halbleiterbauelemente DDR A244D
Text: m o tk ^ ^ e le lK to n c in il-« Inform ation Applikation i m ö O ^ i r ^ e l B l - c b n Inform ation Applikation 3 9 H E F T A 4 10 0 s D AM-FM-Empfänger-IS + A 45 + 1 0 D P LL-Stereodekoder-IS + + Empfängerkonzept veto hatotaftsarvwerk frankfurC/c
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Halbleiterbauelemente DDR
Abstract: BEL 639 transistor Sowjetische Halbleiter-Bauelemente KBC111 k4213 Germanium Transistor katalog radio fernsehen elektronik elektronik DDR KT904 KT372
Text: K a ta lo g sowjetischer H albleiterbauelem ente Si« linden im K a t a lo g t e il : Der hiermit unseren Lesern vorgelegte Katalog sowjetischer Transistoren, Dioden und integrierter Schaltkreise ist das Resultat enger Zusammen arbeit zwischen dem VEB Elektronikhandel Berlin und der Redaktion der
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