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    INDUSTRIALSUPPLIES.COM SCC-KHB16ASYM

    DART FLEXSTYLE DOUBLE POLY PAPER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SCC-KHB16ASYM Box 33 1
    • 1 $64.95
    • 10 $64.95
    • 100 $64.95
    • 1000 $64.95
    • 10000 $64.95
    		Buy Now

    Delta Electronics Inc KHB1748VHS-F00

    FAN IMP MTRZD 175X54MM 48VDC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey KHB1748VHS-F00 Box 6
    • 1 -
    • 10 $125.575
    • 100 $125.575
    • 1000 $125.575
    • 10000 $125.575
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    KEMET Corporation KHB102KN28CGAAA

    CAP CER RAD DISC
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    DigiKey KHB102KN28CGAAA Ammo Pack 10,000
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    • 10000 $0.06343
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    KEMET Corporation KHB102KN28CGGWA

    CAP CER RAD DISC
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    DigiKey KHB102KN28CGGWA Ammo Pack 20,000
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    Newark KHB102KN28CGGWA Bulk 3,000
    • 1 -
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    • 10000 $0.082
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    TME KHB102KN28CGGWA 1,500
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    • 10000 $0.08
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    KEMET Corporation KHB101KN24CGAAA

    CAP CER RAD DISC
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    DigiKey KHB101KN24CGAAA Bulk 10,000
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    • 10000 $0.05381
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    Newark KHB101KN24CGAAA Reel 4,000
    • 1 $0.085
    • 10 $0.085
    • 100 $0.085
    • 1000 $0.085
    • 10000 $0.062
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    Find more KHB1 price and stock on Findchips.com

    KHB1 Datasheets (12)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    PDF Size
    Page count
    KHB104SV1AA-G81
    		KYOCERA 10.4 inch STN transflectiver AVGA color RT4060 Scan PDF 929.63KB 32
    KHB104SV1AA-G91
    		KYOCERA Flat Panel Display Scan PDF 903.53KB 31
    KHB104SV2AA-G81
    		KYOCERA Flat Panel Display Scan PDF 920.01KB 31
    KHB104SV2AA-G91
    		KYOCERA Flat Panel Display Scan PDF 928.34KB 31
    KHB104VG1BB-G92
    		KYOCERA Flat Panel Display Scan PDF 933.3KB 32
    KHB1748VHS-F00
    		Delta Electronics DC Fans, Fans, Thermal Management, BLOWER 48VDC BALL TACH 175X54MM Original PDF 4
    KHB1795A01
    		Korea Electronics TD-SCDMA Scan PDF 14.29KB 1
    KHB1890B01
    		Korea Electronics DECT Original PDF 33.72KB 1
    KHB1890C01
    		Korea Electronics DECT Original PDF 33.09KB 1
    KHB1906A01
    		Korea Electronics PHS Scan PDF 14.3KB 1
    KHB1D0N60D
    		Korea Electronics N CHANNEL MOS FIELD EFFECT TRANSISTOR Original PDF 65.34KB 6
    KHB1D0N60I
    		Korea Electronics N CHANNEL MOS FIELD EFFECT TRANSISTOR Original PDF 65.34KB 6

    KHB1 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    1D0N60

    Abstract: KHB1D9N60I KHB1D0N60I khb1d9n60 DPAK khb*9n60 D-PAK package DPAK datasheet laser marking 5
    Contextual Info: SEMICONDUCTOR KHB1D0N60I MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking 2. Marking KHB 1D0N60 I 1 511 3 2 No. 2006. 2. 6 Item Marking Description Device Name KHB1D9N60I KHB1D9N60I Revision - - Lot No. 511 Revision No : 1 5 Year 0~9 : 2000~2009


    Original     		KHB1D0N60I 1D0N60 KHB1D9N60I 1D0N60 KHB1D9N60I KHB1D0N60I khb1d9n60 DPAK khb*9n60 D-PAK package DPAK datasheet laser marking 5 PDF

    10101DC

    Contextual Info: SEMICONDUCTOR KHB1D2N80D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB1D2N80D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		KHB1D2N80D/I KHB1D2N80D 10101DC PDF

    MOSFET 600V 1A

    Contextual Info: SEMICONDUCTOR KHB1D0N60G TECHNICAL DATA N-Ch Planer MOSFET General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power


    Original     		KHB1D0N60G MOSFET 600V 1A PDF

    KHB1D9N60I

    Contextual Info: SEMICONDUCTOR KHB1D9N60D1/I1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode


    Original     		KHB1D9N60D1/I1 KHB1D9N60I PDF

    khb1d9n60

    Abstract: KHB1D9N60I khb1d9n60d khb*9n60 RL158 PUT2 khb*1D9N60
    Contextual Info: SEMICONDUCTOR KHB1D9N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB1D9N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode


    Original     		KHB1D9N60D/I KHB1D9N60D khb1d9n60 KHB1D9N60I khb1d9n60d khb*9n60 RL158 PUT2 khb*1D9N60 PDF

    KHB1890C01

    Contextual Info: DIELECTRIC DEVICE KHB1890C01 TECHNICAL DATA TYPICAL PASSBAND CHARACTERISTIC DIELECTRIC BAND PASS FILTER DIMENSION 4 2 60 30 5.6 20 3.8 40 2.3 10 4.3 20 RETURN LOSS [dB] ATTENUATION [dB] 1640 1890 1.5 1 1.8 MARKER 2 1.89GHz 2140 Frequency [MHz] _ 0.1mm Dimension Tolerance : +


    Original     		KHB1890C01 89GHz 1680MHz 1790MHz 3800MHz 5700MHz KHB1890C01 PDF

    Contextual Info: SEMICONDUCTOR KHB1D9N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode


    Original     		KHB1D9N60D/I PDF

    Contextual Info: SEMICONDUCTOR KHB1D0N70G TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power


    Original     		KHB1D0N70G PDF

    KHB1D0N60D

    Abstract: KHB1D0N60I
    Contextual Info: SEMICONDUCTOR KHB1D0N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		KHB1D0N60D/I KHB1D0N60D 115mH, dI/dt300A/, KHB1D0N60D KHB1D0N60I PDF

    diode TA 20-08

    Contextual Info: SEMICONDUCTOR KHB1D0N60G TECHNICAL DATA N-Ch Planer MOSFET General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power


    Original     		KHB1D0N60G diode TA 20-08 PDF

    Contextual Info: SEMICONDUCTOR KHB1D9N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode


    Original     		KHB1D9N60D/I PDF

    KHB1D9N60

    Contextual Info: SEMICONDUCTOR KHB1D9N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode


    Original     		KHB1D9N60D/I KHB1D9N60 PDF

    KHB1D0N60D

    Abstract: KHB1D0N60I
    Contextual Info: SEMICONDUCTOR KHB1D0N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		KHB1D0N60D/I KHB1D0N60D KHB1D0N60D KHB1D0N60I PDF

    KHB1D9N60D

    Abstract: khb1d9n60 KHB1D9N60I khb*9n60
    Contextual Info: SEMICONDUCTOR KHB1D9N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB1D9N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode


    Original     		KHB1D9N60D/I KHB1D9N60D KHB1D9N60D khb1d9n60 KHB1D9N60I khb*9n60 PDF

    Contextual Info: SEMICONDUCTOR KHB1D0N70G TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power


    Original     		KHB1D0N70G Drain-Sourceg12. Fig13. Fig14. Fig15. PDF

    1A 700V MOSFET

    Contextual Info: SEMICONDUCTOR KHB1D0N70G TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power


    Original     		KHB1D0N70G Volt560V, 1A 700V MOSFET PDF

    KHB1D9N60I

    Abstract: KHB1D9N60D khb1d9n60 109NC
    Contextual Info: SEMICONDUCTOR KHB1D9N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB1D9N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode


    Original     		KHB1D9N60D/I KHB1D9N60D dI/dt100A/, KHB1D9N60I KHB1D9N60D khb1d9n60 109NC PDF

    Contextual Info: SEMICONDUCTOR KHB1D2N80D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB1D2N80D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		KHB1D2N80D/I KHB1D2N80D 170mH, dI/dt300A/, PDF

    RG 2006 10A 600V

    Contextual Info: SEMICONDUCTOR KHB1D0N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		KHB1D0N60D/I KHB1D0N60D RG 2006 10A 600V PDF

    Contextual Info: SEMICONDUCTOR KHB1D0N60G TECHNICAL DATA N-Ch Planer MOSFET General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power


    Original     		KHB1D0N60G PDF

    Contextual Info: SEMICONDUCTOR KHB1D0N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		KHB1D0N60D/I PDF

    KHB1D0N60D

    Abstract: KHB1D0N60I
    Contextual Info: SEMICONDUCTOR KHB1D0N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		KHB1D0N60D/I KHB1D0N60D KHB1D0N60I PDF

    1D0N60

    Abstract: KHB1D0N60D 1D0N60D 1D0N6 dpak DSA0010423 D-PAK package marking laser dpak Package
    Contextual Info: SEMICONDUCTOR KHB1D0N60D MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking. 2. Marking KHB 1D0N60 D 1 511 3 2 No. 2006. 2. 6 Item Marking Description Device Name KHB1D0N60D KHB1D0N60D Revision - - Lot No. 511 Revision No : 1 5 Year 0~9 : 2000~2009


    Original     		KHB1D0N60D 1D0N60 1D0N60 KHB1D0N60D 1D0N60D 1D0N6 dpak DSA0010423 D-PAK package marking laser dpak Package PDF

    Contextual Info: SEMICONDUCTOR KHB1D0N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		KHB1D0N60D/I KHB1D0N60D KHB1D0N60D KHB1D0N60I 115mH, PDF