2M84G
Abstract: No abstract text available
Text: SKM 195GB066D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 KL M8 E8 .O 2 JXL M8 E8SZ .03+ 2 KLM8B * 5(+ %41(/<-+( +=(0-@-(G CQQ 7 KCL F .0 2 YQ M8 KQQ F [QQ F ¥ KQ 7 .O 2 JLQ M8 C `+ .0 2 KL M8 KQQ F .0 2 YQ M8 J]Q F [QQ F J[QQ F KQQ F W [Q NNN b JXL
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195GB066D
SKM195GB066D
2M84G
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Untitled
Abstract: No abstract text available
Text: SKiM455GD12T4D1 '- KL M6P @,3+99 21.+*;<9+ 9=+-<A<+F Absolute Maximum Ratings Symbol Conditions IGBT 567I 'O ) M6 $6 'O ) JLQ M6 $6DV JKQQ 5 QQ E '.+019<,S ) TQ M6 UQL E JULQ E Y KQ 5 JQ ^9 '.+019<,S ) KL M6 K`L E '.+019<,S ) TQ M6 KJL E aQQ E $6DV ) UN$6WXV
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SKiM455GD12T4D1
18DVI:
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TDH-7070
Abstract: two change over relay 8 pin
Text: SERIES KL ENGINEERING DATA SHEET RELAY - LATCH 4 PDT, 12 AMP Magnetic latch operation All welded construction Contact arrangement 4 PDT Qualified at 10Amps to MIL-PRF-83536 PRINCIPLE TECHNICAL CHARACTERISTICS Contacts rated at 28 Vdc; 115 Vac, 400 Hz, and
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10Amps
MIL-PRF-83536
SO-1056-8691
156lb
TDH-7070
two change over relay 8 pin
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Untitled
Abstract: No abstract text available
Text: SERIES KL ENGINEERING DATA SHEET RELAY - LATCH 4 PDT, 12 AMP Magnetic latch operation All welded construction Contact arrangement 4 PDT Qualified at 10Amps to MIL-PRF-83536 PRINCIPLE TECHNICAL CHARACTERISTICS Contacts rated at 28 Vdc; 115 Vac, 400 Hz, and
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10Amps
MIL-PRF-83536
SO-1056-8691
156lb
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phillips zener
Abstract: Leach relay M83536
Text: SERIES KL ENGINEERING DATA SHEET RELAY - LATCH 4 PDT, 12 AMP Magnetic latch operation All welded construction Contact arrangement 4 PDT Qualified at 10Amps to MIL-PRF-83536 PRINCIPLE TECHNICAL CHARACTERISTICS Contacts rated at 28 Vdc; 115 Vac, 400 Hz, and
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10Amps
MIL-PRF-83536
156lb
SO-1056-8691
phillips zener
Leach relay M83536
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EAF 801
Abstract: eaf801 RG2 DIODE diode rg2 diode UF DC PICO Ace 25 UG DIODE 62 diode TELEFUNKEN e tube 801
Text: Netzröhre fOr GW-Heizung indirekt geheizt Parallel- oder Serienspeisung T I E E I L EAF 801 E E I I kl V E kl E r l l l l l l E I I ¡,d S Ä « i Refl,bar# HF- und ZF-Penf0,# mit D,ode connected in parallel or series Remote cutoff RF/IF-pentode with diode
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Low Leakage Diode Array BAV 170 • Low leakage applications • Medium speed switching times • Common cathode Type Marking Ordering Code tape and reel BAV 170 JXs Q62702-A920 Pin Configuration Package1) 3 » SOT-23 E * J Kl ° EHA0700*
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Q62702-A920
OT-23
a535bos
fl235b05
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transistor f390
Abstract: No abstract text available
Text: 1DI2OOE-O55 200a POWER TRANSISTOR MODULE : Features • R if t S • High Voltage 7'J— Kl*3/ • A S O A 'IS i' •mmm Including Free W heeling Diode Excellent Safe Operating Area Insulated Type • 5 I & • Applications • Chopper Controls •DC^—
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1DI2OOE-O55
transistor f390
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B212 diode
Abstract: bt 151 600 1DI200E-055 30S3 T151
Text: 1DI2OOE-O55 200a POWER TRANSISTOR MODULE : Features • R if t S • High Voltage 7'J— Kl*3/ • A S O A 'IS i' •mmm Including Free W heeling Diode Excellent Safe Operating Area Insulated Type • 5 I & • Applications • Chopper Controls • DC^ —
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1DI2OOE-O55
E82988
l95t/R89
Shl50
B212 diode
bt 151 600
1DI200E-055
30S3
T151
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TZE 3013
Abstract: IR7J
Text: 6DI2OMS-O5O 20a • Outline Drawings POWER TRANSISTOR MODULE • F e a tu re s • High DC Current Gain • M 7f High speed sw itching • 7 'J — Kl*l/fiE • Including Free W heeling Diode Insulated Type • A p p lic a tio n s • J z M tlZ 'f y ? '''?
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I95t/R
TZE 3013
IR7J
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AJM2
Abstract: transistor b228
Text: 2DI24OA-O55 240a -)V • ! Outline Drawings POWER TRANSISTOR MODULE 380 _M 360 ^ «.0 I ■ ^ J b : Features • B fT t! High Voltage • 7 'J — U^ • ASO t — Kl ^j Including Free W h eeling Diode Excellent Safe Operating Area • ÎÊ iS t® Insulated Type
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2DI24OA-O55
E82988
l95t/R89
AJM2
transistor b228
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agh 003
Abstract: M210 TM25
Text: 2DI150Z-1000 50A '< * 7 - POWER TRANSISTOR MODULE : Features • ffili/E • 7 U— High Voltage ') ' s ' ? ¥ < • ASO t — Kl*9/8i • Insulated Type • f f l i i l : A p p lic a tio n s • High Power • Including Free Wheeling Diode Excellent Safe Operating Area
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2DI15OZ-1OOU50A)
agh 003
M210
TM25
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30H3
Abstract: T151 T460 T760
Text: 6DI2OMS-O5O 20a • Outline Drawings POWER TRANSISTOR MODULE • F e a tu re s • High DC Current Gain • M 7f High speed sw itching • 7 'J — Kl*l/fiE • Including Free W heeling Diode Insulated Type • A p p lic a tio n s • J z M tlZ 'f y ? '''?
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6DI2OMS-O5O20A)
fffij83
Ett-Tgl9S24^
l95t/R89
30H3
T151
T460
T760
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KRT 30
Abstract: DIODE 8236 LT 8236 30H3 EV1277 T151 T760 T930
Text: EV1277 30a : Outline Drawings s < r7 — b 7 > Z > Z 9 * i > a . — iU POWER TRANSISTOR MODULE • it # : F e a tu re s • AflHJE High Voltage • "7 'J — >J > ? ? ' ( # — Kl*3i0c Including Free W heeling Diode Insulated Type • W & ffc ■ f f lj S s : A p p lic a tio n s
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EV1277
25-35kg
E82988
19S24
l95t/R89
KRT 30
DIODE 8236
LT 8236
30H3
T151
T760
T930
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Untitled
Abstract: No abstract text available
Text: 1DI75E-100 75a ' <r7 — h ±/<7 n .-)U v i Outline Drawings POWER TRANSISTOR MODULE • Features • High Voltage • 7 'J — Kl*3J& • A S O ^ '/ a ^ • Including Free W heeling Diode Excellent Safe Operating Area Insulated Type • f f l i Ê ■ A p p lic a tio n s
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1DI75E-100
I95t/R89)
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Untitled
Abstract: No abstract text available
Text: 6DI100A-050 iooa l± s < n - * : ï > = L - } V ' < n — \=7 > i > 7 ,9 =£\>n.-)V : Outline Drawings POW ER T R A N S IS T O R M ODULE • 4# ^ : Features ,' V K-'v* • 7 '} —jfc-f >J > V # 4 =t— Kl*9 E • hFE*''S!nL' • Including Free W heeling Diode
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6DI100A-050
I95t/RS9
Shl50
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transistor bc 151 equivalent
Abstract: transistor bc 241 bc 303 transistor diode b242 SRFE 1DI75E-100 T460 T760 T810 T930
Text: 1DI75E-100 75a ' <r7 — h ±/<7 n .-)U v i Outline Drawings POWER TRANSISTOR MODULE • Features • High Voltage • 7 'J — Kl*3J& • A S O ^ '/ a ^ • Including Free W heeling Diode Excellent Safe Operating Area Insulated Type • f f l i Ê ■ A p p lic a tio n s
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1DI75E-100
-40JWfltSfflKffidrWttÃ
95t/R89
Shl50
transistor bc 151 equivalent
transistor bc 241
bc 303 transistor
diode b242
SRFE
T460
T760
T810
T930
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Transistor J3T
Abstract: No abstract text available
Text: 6DI100A-050 iooa ! Outline Drawings PO W ER TRA N SISTO R MODULE F e a tu re s • 7 l) —fc-f >J • h F E ^ iÜ l' • Kl*9/8c Including Free W heeling Diode High DC Current Gain Insulated Type • f f l i i : Applications •AC i — AC M otor Controls
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6DI100A-050
95t/R89
Transistor J3T
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Untitled
Abstract: No abstract text available
Text: 6 D I 1 O M S - O 5 O O 0 A : Outline Drawings POWER TRANSISTOR MODULE F e a tu re s • hFE*''iiiC ' High DC Current Gain •J V f y f - K a S E * - ' • 7' J — High speed switching Kl *3# • Including Free W heeling Diode Insulated Type • : A p p lic a tio n s
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l95t/R89
ShL50
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Untitled
Abstract: No abstract text available
Text: 19-0323; R ev 3 ; 8 /9 6 >kl>JX I>l/l S i n g l e +5V, F u l l y I n t e g r a t e d , 1. 2 5 G b p s L a s e r Di ode D r i v e r Description C om plem entary enable inputs allow the MAX3261 to interface with open-fiber-control architecture— a feature not found in other 1,25Gbps laser diode drivers.
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MAX3261
25Gbps
MAX3261â
032mm)
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2X40
Abstract: 87CNQ020A FST8115 FST8120 609G
Text: Schottky Diode FST8115, FST8120 m m •FAN 2 -P L C S P, 1 2 3 Dim. Inches 1 2 3 Common Cathode A C E F G H J K L M N P 1 2 3 A=Common Anode M— k Ci Kl I I _L i o 3 PINS eq sp at .200 — Ô i i—L H — *^ Jj Ô Ô 1 2 3 D=Doubler M illim eter Minimum
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FST811
FST8120
FST8115Â
FST8120*
2X40
87CNQ020A
FST8115
FST8120
609G
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RF5RD501
Abstract: rf5rd301 TRANSISTOR 501 EK-032-8906 dc converter regulator high current converter circuit diagram switching regulator circuit CMD-6L
Text: PRELIMINARY EK-032-8906 RF5RD301/501 STEP-UP/STEP- DOWN DC/DC CONVERTER RF5RD301/501 are compact DC/DC converter ICs developed with the CMOS process technology. When the input voltage is sufficiently high, they work as series regulators. When the input voltage falls
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EK-032-8906
RF5RD301/501
RF5RD301/501
47juF
KDSailll7-45
RF5RD501
rf5rd301
TRANSISTOR 501
EK-032-8906
dc converter regulator
high current converter circuit diagram
switching regulator circuit
CMD-6L
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uPD6120
Abstract: npd19 KL SN 102 PD1913 Li42 UD1943 ud271 27S9S KL 13 diode UPD6120C102
Text: MOS DIGITAL INTEGRATED CIRCU IT /¿ P D 6 1 2 0 M U L T I- P U R P O S E R E M O T E C O N T R O L T R A N S M IT T E R IC C M O S LSI D ESCRIPTIO N The pPD6120 is an LSI for the transmission of general-purpose, infrared, remote control codes to TV s, V TR s, audio equip
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uPD6120
457sas
/IPD6120
npd19
KL SN 102
PD1913
Li42
UD1943
ud271
27S9S
KL 13 diode
UPD6120C102
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6122G0
Abstract: NEC PD6121 455b kl diode 03 IC-6316B mpd 6120
Text: MOS INTEGRATED CIRCUIT M P D 6 1 2 2 M U L T I-P U R P O S E R E M O T E C O N T R O L T R A N S M IT T E R 1C C M O S LSI DESCRIPTION The //PD6122 is an infrared remote control transmitter LSI for T V , V CR , stereo components, cassette decks, air con
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uPD6122
IR30-00
VP15-00
WS60-00
b427525
6122G0
NEC PD6121
455b
kl diode 03
IC-6316B
mpd 6120
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