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    Samsung Semiconductor KM23C4100B

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    KM23C41 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM23C4100D-10 Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF
    KM23C4100D-12 Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF
    KM23C4100D-8 Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF
    KM23C4100DET Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF
    KM23C4100DET-10 Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF
    KM23C4100DET-12 Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF
    KM23C4100DET-8 Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF
    KM23C4100DG-10 Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF
    KM23C4100DG-12 Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF
    KM23C4100DG-8 Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF
    KM23C4100DT Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF
    KM23C4100DT-10 Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF
    KM23C4100DT-12 Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF
    KM23C4100DT-8 Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF

    KM23C41 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    40DIP600

    Abstract: 40-DIP-600
    Text: KM23C4100D G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption


    Original     		PDF KM23C4100D 512Kx8 /256Kx16) KM23C4100D 40-DIP-600 KM23C4100DG 40-SOP-525 015MIN 40DIP600 40-DIP-600

    KM23C4100DET

    Abstract: KM23C4100DT
    Text: KM23C4100D E T CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption


    Original     		PDF KM23C4100D 512Kx8 /256Kx16) 44-TSOP2-400 KM23C4100DET KM23C4100DT

    KM23C4100DET

    Abstract: KM23C4100DT mask rom 4M
    Text: KM23C4100D E T CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption


    Original     		PDF KM23C4100D 512Kx8 /256Kx16) 44-TSOP2-400 KM23C4100DET KM23C4100DT mask rom 4M

    KM23C16005AG

    Abstract: 44TSOP2 44-TSOP2
    Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE Density Power Supply 4M bit 5V±10% Part Number KM23C4000C G KM23C4100C(G/T) 8M bit 5V±10% 5V±10% 3.3V-0.3V 5Vt1C% 3 2M bit 3.3V+0.3V , 100 . Extended 512Kx8/256Kx16 100 - 150 KM23V41OOCET 512Kx 8 512Kx8/256Kx16


    OCR Scan     		PDF KM23C4000C KM23C4100C KM23C410OCET KM23C4200C 512Kx 512Kx8/256Kx16 512Kx8/256Kx16 KM23C16005AG 44TSOP2 44-TSOP2

    KM23C4100

    Abstract: No abstract text available
    Text: KM23C4100 CMOS MASK ROM 4M-BH 512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption


    OCR Scan     		PDF KM23C4100 8/256K 150ns 40-pin 44-pin KM23C4100 23C4100 KM23C4100)

    Untitled

    Abstract: No abstract text available
    Text: S A MS UN G E L E C T R O N I C S INC 42E D E3 7=Jb4142 G O I U S M 5 SSMGK CMOS MASK ROM KM23C4100A 4M-Bit 512Kx8/256Kx 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w ltchable organization Byte Mode: 524,288 x 8 W ord M ode: 26 2,14 4x16 • Fast access tim e : 120ns (m ax.)


    OCR Scan     		PDF Jb4142 KM23C4100A 512Kx8/256Kx 120ns 40-pln 44-pin 23C4100A 0D111S7 23C4100A) KM23C4100AFP1)

    KM23C4100B

    Abstract: No abstract text available
    Text: KM23C4100B CMOS MASK ROM 4M-Bit 512Kx 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byle Mode: 524,286 x 8 Word Mode: 26 2,14 4x1 6 • Fast access time: 120ns (max.) • Supply voltage: single + 5V • Current consumption


    OCR Scan     		PDF KM23C4100B 512Kx 8/256K 120ns 40-pin 44-pin KM23C4100B) KM23C4100BFP1) KM23C4100B

    Untitled

    Abstract: No abstract text available
    Text: KM23C4100H FP CMOS MASK ROM 4M-Bit (512K.X 8/256K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 100ns (max.) • Supply voltage: single + 5V • Current consumption


    OCR Scan     		PDF KM23C4100H 8/256K 100ns 100/iA 40-pin 44-pin 23C4100H)

    40-SQ

    Abstract: 40DIP600
    Text: KM23C41 OOD G CMOS MASK ROM 4M-Bit (512Kx8 256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access tim e : 80ns(M ax.) • Supply voltage : single +5V • Current consumption


    OCR Scan     		PDF KM23C41 512Kx8 256Kx16) 23C4100D 40-DIP-600 23C4100DG 40-SQ P-525 23C4100D 40DIP600

    Untitled

    Abstract: No abstract text available
    Text: KM23C41 OOD E T CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access tim e : 80ns(M ax.) • Supply voltage : single +5V • Current consumption


    OCR Scan     		PDF KM23C41 512Kx8 /256Kx16) 23C4100D 44-TSQP2-400

    Untitled

    Abstract: No abstract text available
    Text: KM23C4100H CMOS MASK ROM 4M-Bit 512K.X 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 100ns (m ax.) • Supply voltage: single + 5V • Current consumption


    OCR Scan     		PDF KM23C4100H 8/256K 100ns 40-pin 44-pin KM23C41OOH 23C4100H) KM23C4100HFP1)

    KM23C4100B

    Abstract: I0110
    Text: KM23C41 OOB G/FP CMOS MASK ROM 4M-Bit (512K x 8/256K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144x16 • Fast access time: 120ns (max.) • Supply voltage: single + SV • Current consumption


    OCR Scan     		PDF KM23C41 8/256K 144x16 120ns 50/xA 40-pin 44-pin KM23C4100B I0110

    1136L

    Abstract: No abstract text available
    Text: KM23C41 OOD G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable orginization 524,288 x 8 (byte mode) 262,144 x 16(word mode) • Fast access tim e : 80ns(M ax.) • Supply voltage : single +5V • Current consumption


    OCR Scan     		PDF KM23C41 512Kx8 /256Kx16) 23C4100D 40-DIP-600 23C4100DG 40-SQP-525 40-DIP-600C 1136L

    4100D

    Abstract: No abstract text available
    Text: KM23C4100D E T CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swrtchable organization 524,288 x 8{byte mode) 262,144 x 16(word mode) • Fast access time :80ns(Max.) • Supply voltage : single +SV • Current consumption


    OCR Scan     		PDF KM23C4100D 512Kx8 /256Kx16) KM23C41 44-TSOP2-4DO 4100D

    Untitled

    Abstract: No abstract text available
    Text: KM23C4100AG CMOS MASK ROM 4M-Bit 512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION ROM fa b ric a te d u s in g a ll in p u ts and o u tp u ts are T T L c o m p a tib le . B e c a u s e o f its a s y n c h ro n o u s o p e ra tio n , it re q u ire s no e x te rn a l c lo c k


    OCR Scan     		PDF KM23C4100AG 8/256K KM23C4100AG)

    mask rom 4M

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E » DG17GDÔ b l 3 KM23C41 OOB G/FP SriGK CMOS MASK ROM 4M-Bit (512K x 8/256K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 120ns (max.)


    OCR Scan     		PDF DG17GDÃ KM23C41 8/256K 120ns 50/iA 40-pin KM23C4100B 7Tb414B mask rom 4M

    Untitled

    Abstract: No abstract text available
    Text: SAM SUN G E L E C T R O N I C S INC 4SE D El T'ìbmMS GGlllMM 2 • S N G K KM23C4100 CMOS MASK ROM T W G ' 3 - i 5 - 4M-Bit (512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w ltchable organization Byte M ode: 524,288 x 8 W ord Mode: 26 2,14 4x16


    OCR Scan     		PDF KM23C4100 8/256K 150ns 100fiA 40-pin KM23C4100 DQ11147 KM23C4100) 4100FP

    Untitled

    Abstract: No abstract text available
    Text: KM23C4100A CMOS MASK ROM 4M-Bit 512K.X 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 120ns (max.) • Supply voltage: single + 5V • Current consumption


    OCR Scan     		PDF KM23C4100A 8/256K 120ns 40-pln 44-pin 23C4100A) 23C4100AFP1) 23C4100AFP2)

    Untitled

    Abstract: No abstract text available
    Text: KM23C4100D G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time . 80ns(Max.) • Supply voltage : single +5V • Current consumption


    OCR Scan     		PDF KM23C4100D 512Kx8 /256Kx16) 50jiA KM23C4100D 40-DIP-600 KM23C41OODG 40-SQP-525 KM23C41 100pF

    Untitled

    Abstract: No abstract text available
    Text: KM23C4100CET CM OS Mask ROM ELECTRONICS 4M-Bit 512K X8/256K x16 M-ROM(Extended Temperature Product) FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word mode: 262,144 x 16 • Fast access time :100ns(max.) > Supply voltage : single +5V


    OCR Scan     		PDF KM23C4100CET X8/256K 100ns 44-TSQP2-400 KM23C4100CET 288x8bit 144x16bit G031371

    ic tl 0741

    Abstract: tl 0741
    Text: KM23C41 OOD E T CMOS MASK ROM 4M-Bit (512Kx8 256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access tim e : 80ns(M ax.) • Supply voltage : single +5V • Current consumption


    OCR Scan     		PDF KM23C41 512Kx8 256Kx16) 23C4100D 44-TSQ P2-400 44-TSOP2-400) ic tl 0741 tl 0741

    Untitled

    Abstract: No abstract text available
    Text: KM23C4100A CMOS MASK ROM 4M-Bit 512Kx8/256Kx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itch ab le organization T h e K M 2 3 C 4 1 0 0 A is a fu lly s ta tic m ask p ro g ra m m a b le ROM Byte M ode: 524,288 x 8 s ilic o n -g a te CMOS p ro c e s s


    OCR Scan     		PDF KM23C4100A 512Kx8/256Kx16) 23C4100A) KM23C4100AFP1) 23C4100A 23C4100AFP2)

    KM23C4100B

    Abstract: No abstract text available
    Text: KM23C4100B CMOS MASK ROM 4M-Bit 512Kx 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 120ns (max.) • Supply voltage: single + 5V • Current consumption


    OCR Scan     		PDF KM23C4100B 512Kx 8/256K 120ns 50/iA 40-pin 44-pin KM23C4100B KM23C4100B)

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b?E ]> SMGK 0017013 t û o CMOS MASK ROM KM23C4100H FP 4M-Bit (512K x 8/256K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 100ns (max.)


    OCR Scan     		PDF KM23C4100H 8/256K 100ns 40-pin 44-pin 0G17Qlb KM23C4100H) KM23C4100HFP)