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    KM416C1204BJ Search Results

    KM416C1204BJ Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM416C1204BJ-45 Samsung Electronics 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Scan PDF
    KM416C1204BJ-5 Samsung Electronics 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Scan PDF
    KM416C1204BJ-6 Samsung Electronics 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Scan PDF
    KM416C1204BJ-7 Samsung Electronics 5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Scan PDF
    KM416C1204BJ-L45 Samsung Electronics 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Scan PDF
    KM416C1204BJ-L5 Samsung Electronics 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Scan PDF
    KM416C1204BJ-L6 Samsung Electronics 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Scan PDF
    KM416C1204BJ-L7 Samsung Electronics 5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Scan PDF

    KM416C1204BJ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C1204B

    Abstract: t2g memory
    Text: KM416C1204BJ CMOS DRAM 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		KM416C1204BJ 16Bit C1204B t2g memory PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C1204BJ CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		KM416C1204BJ 1Mx16 16C1204BJ 40SOJ PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM364E124B J DRAM MODULE KMM364E124BJ Fast Page with EDO Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V G ENER AL DESCRIPTION FEATURES • Part Identification - KMM364E124BJ 1024 cycles/16ms, SOJ The Samsung KMM364E124BJ is a 1M bit x 64


    OCR Scan     		KMM364E124B KMM364E124BJ 1Mx64 1Mx16, KMM364E124BJ cycles/16ms, 1Mx16bit 42-pin PDF

    KMM5361205BWG

    Abstract: No abstract text available
    Text: Preiminary DRAM MODULE KMM5361205BW/BWG KMM5361205BW/BWG Fast Page Mode with Extended Data Out 1Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM G ENER AL DESC RIPTIO N FEATURES The Sam sung KM M 5361205BW is a 1M bit x 36 • Part Identification


    OCR Scan     		KMM5361205BW/BWG KMM5361205BW/BWG 1Mx36 5361205BW 5361205B 1Mx16 42-pin 24-pin 72-pin KMM5361205BWG PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM5322204BW/BWG DRAM MODULE KMM5322204BW/BWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322204BW is a 2M bit x 32 • Part Identification D ynam ic RAM high density m em ory module. The


    OCR Scan     		KMM5322204BW/BWG KMM5322204BW/BWG 2Mx32 1Mx16 KMM5322204BW KMM5322204BW( cycles/16ms 5322204BW PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary DRAM MODULE KMM364E224BJ KMM364E224BJ Fast Page with EDO Mode 2Mx64 DRAM DIMM based on 1M x 16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364E224BJ is a 2M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364E224BJ consists of eight CMOS


    OCR Scan     		KMM364E224BJ 2Mx64 1Mx16bit 42-pin 400mil 48pin 168-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM5362205BW/BWG DRAM MODULE KMM5362205BW/BWG Fast Page Mode with Extended Data Out 2Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362205BW is a 2M bit x 36 Dynamic RAM high density memory module. The


    OCR Scan     		KMM5362205BW/BWG KMM5362205BW/BWG 2Mx36 KMM5362205BW 1Mx16 42-pin 24-pin 72-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM5321204BW/BWG DRAM MODULE KMM5321204BW/BWG Fast Page Mode with Extened Data Out 1Mx32 DRAM SIMM, 5V, 1K Refresh using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Sam sung K M M 5321204BW is a 1M bit x 32 • Part Identification D ynam ic RAM high density m em ory module. The


    OCR Scan     		KMM5321204BW/BWG KMM5321204BW/BWG 1Mx32 1Mx16 5321204BW 5321204B 1Mx16bit 42-pin 72-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Preiminary KMM5361205BW/BWG DRAM MODULE KMM5361205BW/BWG Fast Page Mode with Extended Data Out 1Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM G ENER AL DESCRIPTIO N The Samsung KMM5361205BW is a 1M bit x 36 FEATURES • Part Identification Dynamic RAM high density memory module. The


    OCR Scan     		KMM5361205BW/BWG KMM5361205BW/BWG 1Mx36 KMM5361205BW KMM5361205BW cycles/16ms KMM5361205BWG 1Mx16 PDF

    IC 74142

    Abstract: KMM364E224BJ
    Text: Preliminary KMM364E224BJ DRAM MODULE KMM364E224BJ Fast Page with EDO Mode 2Mx64 DRAM DIMM based on 1M x 16, 1K Refresh, 5V G EN ERA L DESCRIPTION FEATURES The Samsung KMM364E224BJ is a 2M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364E224BJ consists of eight CMOS


    OCR Scan     		KMM364E224BJ KMM364E224BJ 2Mx64 1Mx16bit 42-pin 400mil 48pin 168-pin IC 74142 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM5322204BW/BWG DRAM MODULE KMM5322204BW/BWG Fast Page Mode with Extended Data out 2M x32 DRAM SIMM, 5V, 1K Refresh using 1Mx16 DRAM G EN ERA L DESC RIPTIO N FEATURES The Samsung KMM5322204BW is a 2M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan     		KMM5322204BW/BWG KMM5322204BW/BWG 1Mx16 KMM5322204BW 1Mx16bit 42-pin 72-pin PDF