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    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D 7 ^4 1 4 2 0 G1 S Ö 73 ‘t ë ô CMOS DRAM KM416C256A/AL/ALL 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tcAc tRC 60ns 15ns 110ns KM416C256A/AÜALL-7 70ns 20ns 130ns


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    Abstract: KM416C256AJ
    Text: FUNCTION GUIDE MEMORY ICs D ynam ic RAM Capacity Continued Part Number Organization Speed(ns) Technology Features Packages Remark * KM49V512ALT 5 12 K x9 70/80 CM O S Fasi Page(3.3V) 28 Pin TSOP-ll(Forward) Now * KM49V512ALTR 5 12 K x9 70/80 CM O S Fast Page(3.3V)


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    EC-A328

    Abstract: KM416C256AJ KM416C256AZ
    Text: KM416C256A/AUALL CMOS DRAM 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: The Samsung KM416C256A/AL/ALL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its design Is optimized for high performance


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