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    Untitled

    Abstract: No abstract text available
    Text: KM41V4000BLL CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41V4000BLL is a high speed CMOS 4,194,304 bit x 1 Dynamic Random Access Memory, Its design is optimized for high performance applications


    OCR Scan     		PDF KM41V4000BLL KM41V4000BLL-7 KM41V4000BLL-8 KM41V4000BLL-10 100ns 130ns 150ns 180ns KM41V4000BLL

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • ?Tbm42 KM41V4000BLL GGlS7fi4 ÔE2 CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41V4000BLL is a high speed CMOS 4,194,304 bit x 1 Dynamic Random Access Memory. Its


    OCR Scan     		PDF Tbm42 KM41V4000BLL KM41V4000BLL KM41V4000BLL-7 130ns KM41V4000BLL-8 150ns KM41V4000BLL-10 100ns 180ns

    KM44C1000BJ

    Abstract: 4Mx1 4Mx1 nibble
    Text: FUNCTION G U IDE M E M O R Y IC s Dynamic R A M Continued Capacity 4 M bit Part Number Organization Speed(ns) Technology Features Packages Remark KM41C4000BTR 4 Mx1 60/70/80 CMOS Fast Page 20 Pin TSOP-ll(Reverse) Now KM41C4000BLP KM41C4000BU KM41C4000BLZ


    OCR Scan     		PDF KM41C4000BTR KM41C4000BLP KM41C4000BU KM41C4000BLZ KM41C4000BLV KM41C4000BLVR KM41C4000BLT KM41C4000BLTR KM41C4000BSLP KM41C4000BSU KM44C1000BJ 4Mx1 4Mx1 nibble