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    TCA 290

    Abstract: No abstract text available
    Text: '* KM44C268C CMOS DRAM 2 5 6 K X 4 Bit C M O S Dynamic R A M with Static Column M ode Write P er Bit M ode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C268C is a high speed CMOS 2 6 2 ,1 4 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    KM44C268C KM44C268C-6 KM44C268C-7 KM44C268C-8 110ns 130ns 150ns KM44C268C KM44C26SC 20-LEAD TCA 290 PDF