Untitled
Abstract: No abstract text available
Text: KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K
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Original
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KM44C4004C,
KM44C4104C
KM44V4004C,
KM44V4104C
advanc4V4104C
300mil
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PDF
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Untitled
Abstract: No abstract text available
Text: KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K
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Original
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KM44C4004C,
KM44C4104C
KM44V4004C,
KM44V4104C
advanc4V4104C
300mil
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PDF
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DIODE 1N4004 mic
Abstract: LC1 D205 KT3170 IC CD7738 CMOS 4066 NPN 9014 9014 general purpose npn transistor IC kt3170 ALC 887 specification for kt3170
Text: SPT5506A ADAPTIVE DIFFERENTIAL PCM GENERAL DESCRIPTION The SPT5506A is to integrate an 8-bits CPU, music generator, segment LED driver, analog switches, programmable attenuator and auto level control amplifiers into one chip. The SPT5506A includes a 40K bytes
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Original
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SPT5506A
SPT5506A
58KHz)
DIODE 1N4004 mic
LC1 D205
KT3170 IC
CD7738
CMOS 4066
NPN 9014
9014 general purpose npn transistor
IC kt3170
ALC 887
specification for kt3170
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PDF
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KM44C4004B
Abstract: No abstract text available
Text: KM44C4004BS CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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KM44C4004B
KM44C4004BS
0034S12
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PDF
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Untitled
Abstract: No abstract text available
Text: KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T h is is a fa m ily of 4 .1 9 4 ,3 0 4 x 4 bit E xte n d e d D a ta O u t C M O S D R A M s. E xte n d e d D a ta O u t M ode o ffe rs high sp e e d ran d o m a c c e s s of
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OCR Scan
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KM44C4004C,
KM44C4104C
KM44V4004C,
KM44V4104C
sh04C
300mil
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PDF
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Untitled
Abstract: No abstract text available
Text: KM44C4004B, KM44C4104B KM44V4004B, KM44V4104B CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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KM44C4004B,
KM44C4104B
KM44V4004B,
KM44V4104B
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PDF
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Untitled
Abstract: No abstract text available
Text: KM44C4004A/AL/ALL/AS L CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tfiC tHPC KM44C4004A/AL/ALL/ASL-5 50ns 13ns 90ns 20ns KM44C4004A/AL/ALL/ASL-6 60ns 15ns 110ns 24ns KM44C4004A/AL/ALL/ASL-7
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OCR Scan
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KM44C4004A/AL/ALL/AS
KM44C4004A/AL/ALL/ASL-5
KM44C4004A/AL/ALL/ASL-6
110ns
KM44C4004A/AL/ALL/ASL-7
130ns
KM44C4004A/AL/ALL/ASL-8
150ns
KM44C4004A/AL/ALL/ASL
KM44C4004A/AL/ALL/ASL
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PDF
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Untitled
Abstract: No abstract text available
Text: KM44C4004BK CMOS DRAM ELECTRONICS 4 M x 4 Bit C M O S Dynamic H A M with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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KM44C4004BK
512Kx8)
7Tb414E
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PDF
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V4004C
Abstract: No abstract text available
Text: KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4.194,304 x 4 bit Extended Data Out CMOS ORAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K
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OCR Scan
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KM44C4004C,
KM44C4104C
KM44V4004C,
KM44V4104C
64ms/32ms
V4004C
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PDF
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Untitled
Abstract: No abstract text available
Text: KM44C4004B S CMOS D R AM ELECTR O NICS 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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KM44C4004B
KM44C4004BS
D034S11
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PDF
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Untitled
Abstract: No abstract text available
Text: KM44C4004A, KM44C4104A KM44V4004A, KM44V4104A CMOS DRAM 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply
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OCR Scan
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KM44C4004A,
KM44C4104A
KM44V4004A,
KM44V4104A
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PDF
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km44c4104b
Abstract: No abstract text available
Text: KM44C4004B, KM44C4104B KM44V4004B, KM44V4104B CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T h is is a fa m ily o f 4 ,1 9 4 ,3 0 4 x 4 bit E x te n d e d D a ta O u t C M O S D R A M s. E x te n d e d D a ta O u t M o d e o ffe rs
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OCR Scan
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KM44C4004B,
KM44C4104B
KM44V4004B,
KM44V4104B
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PDF
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KM44C4004
Abstract: No abstract text available
Text: KM44C4004A/AL/ALL/ASL 4M CMOS DRAM x4 Bit CMOS Dynamic RAM with Extended Data Out GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tRC tHPC KM44C4004A/AL/ALL/ASL-5 50ns 13ns 90ns 20ns KM44C4004A/AL/ALL/ASL-6 60ns 15ns 110ns 24ns KM44C4004A/AL/ALL/ASL-7
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OCR Scan
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KM44C4004A/AL/ALL/ASL
KM44C4004A/AL/ALL/ASL-5
KM44C4004A/AL/ALL/ASL-6
KM44C4004A/AL/ALL/ASL-7
KM44C4004A/AL/ALL/ASL-8
110ns
130ns
150ns
24-LEAD
300MIL,
KM44C4004
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PDF
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4104B
Abstract: No abstract text available
Text: KM44C4004BK CMOS DRAM ELECTRONICS 4 M x 4 Bit C M O S Dynamic R A M with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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KM44C4004BK
4104B
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PDF
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Untitled
Abstract: No abstract text available
Text: KM44C4004A, KM44C4104A KM44V4004A, KM44V4104A CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily of 4 ,1 94 ,3 0 4 x 4 bit Extended D ata O ut C M O S D RAM s. E xte n d e d D ata O u t M ode offers high speed random a cce ss of m em ory ce lls w ith in the sam e row, so called H yper P a g e M ode. Pow er supply
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OCR Scan
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KM44C4004A,
KM44C4104A
KM44V4004A,
KM44V4104A
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PDF
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DG34B
Abstract: No abstract text available
Text: KM44C4 1 04B S CMOS DR AM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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KM44C4
KM44C4104BS
D034b64
DG34B
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PDF
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KM44C4104bk
Abstract: cd-rom circuit diagram
Text: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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KM44C4
KM44C4104BK
7Tbm42
0034bb2
KM44C4104bk
cd-rom circuit diagram
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PDF
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VG264265B
Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D
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OCR Scan
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256kxl6
256kxl6,
VG264265B
HM514265D
HY514264B
MT4C16270
uPD4244265LE
KM416C254D
TC5144265D
TC5117405CSJ
hyundai
cross reference guide
TC51V16160
Micron 4MX32 EDO SIMM
dram cross reference
cross reference
tc5117800cft
SAMSUNG Cross Reference
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PDF
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4MB DRAM
Abstract: 4MX16 1MX16
Text: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .
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OCR Scan
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KM41C4000D/KM41V4000D.
KM44C1000D/KM44V1000D.
KM44C1003D
-KM44C1004D/KM44V1004D.
KM44C1005D
-KM48C512D/KM48V512D.
KM48C512D
4MB DRAM
4MX16
1MX16
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KM M 3 7 2 E 4 0 4 B S Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KM M 3 7 2 E 4 0 4 B S Revision History Version 0.0 (Sept, 1997) ; Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.
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OCR Scan
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4Mx72
4Mx16
372E404BS
4096cycles/64ms
100Max
54Max)
KMM372E404BS
-KM416C4104BS
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PDF
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KM44V4004BS
Abstract: irf ddt D0350
Text: KM44 V 4 0 0 4 B S CMOS DR A M ELECTRONICS 4 M x4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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16Mx4,
512Kx8)
KM44V4004BS
7Tb414B
D0350fl3
KM44V4004BS
irf ddt
D0350
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PDF
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KM44C4000aS 6
Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6
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OCR Scan
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KM41C4000C-5
KM41C4000CL-5
KM41C4002C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000CL-7
KM41C4002C-7
KM41V4000C-7
KM41V4000CL-7
KM41C4000C-8
KM44C4000aS 6
KM44C4000AS
KM44C4000A-S
km44c4100as
KM48V2100AL
KM416V256BL
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PDF
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Untitled
Abstract: No abstract text available
Text: TABLE OF CONTENTS I. PRODUCT GUIDE 1. Introduction. 11 2. Product G u id e . 18 3. DRAM Ordering System. 23
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OCR Scan
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KM41C1000D
KM44C256D.
KM41C4000C
KM41V4000C.
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PDF
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KM44C4104bk
Abstract: No abstract text available
Text: KMM5328004B K/B KG KMM5328104BK/BKG DRAM MODULE KMM5328004BK/BKG & KMM5328104BK/BKG Fast page with EDO Mode 8Mx32 DRAM SIMM, 4K & 2K Refresh, 5V G EN ERA L D ESCRIPTIO N The Samsung KMM53280 1 04BK is a 8M bit x 32 FEATURES • Part Identification Dynamic RAM high density memory module. The
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OCR Scan
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8Mx32
KMM53280
24-pin
72-pin
KMM5328004B
KMM5328104BK/BKG
KMM5328004BK/BKG
KMM5328104BK/BKG
KM44C4104bk
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PDF
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